DE2917082C2 - - Google Patents
Info
- Publication number
- DE2917082C2 DE2917082C2 DE2917082A DE2917082A DE2917082C2 DE 2917082 C2 DE2917082 C2 DE 2917082C2 DE 2917082 A DE2917082 A DE 2917082A DE 2917082 A DE2917082 A DE 2917082A DE 2917082 C2 DE2917082 C2 DE 2917082C2
- Authority
- DE
- Germany
- Prior art keywords
- gate electrode
- field effect
- semiconductor
- effect transistor
- semiconductor body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 52
- 230000005669 field effect Effects 0.000 claims description 21
- 150000002500 ions Chemical class 0.000 claims description 20
- 239000010410 layer Substances 0.000 claims description 18
- 230000000694 effects Effects 0.000 claims description 15
- 239000002800 charge carrier Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000002344 surface layer Substances 0.000 claims description 6
- 238000002513 implantation Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims description 2
- 239000000969 carrier Substances 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 description 10
- 230000000873 masking effect Effects 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 210000003608 fece Anatomy 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 239000010871 livestock manure Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
- H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19792917082 DE2917082A1 (de) | 1979-04-27 | 1979-04-27 | Feldeffekttransistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19792917082 DE2917082A1 (de) | 1979-04-27 | 1979-04-27 | Feldeffekttransistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2917082A1 DE2917082A1 (de) | 1980-11-06 |
| DE2917082C2 true DE2917082C2 (ja) | 1988-07-21 |
Family
ID=6069407
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19792917082 Granted DE2917082A1 (de) | 1979-04-27 | 1979-04-27 | Feldeffekttransistor |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE2917082A1 (ja) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4494016A (en) * | 1982-07-26 | 1985-01-15 | Sperry Corporation | High performance MESFET transistor for VLSI implementation |
| US4558509A (en) * | 1984-06-29 | 1985-12-17 | International Business Machines Corporation | Method for fabricating a gallium arsenide semiconductor device |
-
1979
- 1979-04-27 DE DE19792917082 patent/DE2917082A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE2917082A1 (de) | 1980-11-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3853778T2 (de) | Verfahren zur Herstellung eines Halbleiterbauelements. | |
| EP0879481B1 (de) | Durch feldeffekt steuerbares halbleiterbauelement | |
| DE69119820T2 (de) | Halbleiteranordnung mit verringten zeitabhängigen dielektrischen Fehlern | |
| DE3011982C2 (ja) | ||
| DE3901369A1 (de) | Verfahren zur herstellung einer doppelt diffundierten metall-oxid-halbleiter-feldeffekt-transistorvorrichtung sowie durch dieses verfahren hergestellte vorrichtung | |
| DE19744687A1 (de) | Feldeffekttransistor und Herstellungsverfahren desselben | |
| DE3326534A1 (de) | Schottkybarrieren-mos-bauelemente | |
| DE2655998C2 (de) | Isolierschicht-Feldeffekttransistor mit zusammengesetztem Kanal und Verfahren zu seiner Herstellung | |
| DE2547828B2 (de) | Verfahren zur Herstellung eines Speicherelements mit einem Doppelgate-Isolierschicht-Feldeffekttransistor | |
| DE1965799C3 (de) | Verfahren zur Herstellung eines Halbleiterbauelementes | |
| DE19640561A1 (de) | Darin beabstandete epitaktische Sperrschichtfeldeffekttransistorbereiche ausweisende Isolierschichthalbleitervorrichtngen und ihre Herstellungsverfahren | |
| DE2419019C3 (de) | Verfahren zum Herstellen eines Sperrschichtfeldeffekttransistors | |
| DE2030403B2 (de) | Verfahren zum Herstellen eines Halbleiterbauelementes | |
| DE2432352C3 (de) | MNOS-Halbleiterspeicherelement | |
| DE19947020A1 (de) | Kompensationsbauelement mit variabler Ladungsbilanz | |
| DE2160462A1 (de) | Halbleiteranordnung und verfahren zur herstellung dieser halbleiteranordnung. | |
| DE112006002377B4 (de) | Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung | |
| DE1614300B2 (de) | Feldeffekttransistor mit isolierter Steuerelektrode | |
| DE3650573T2 (de) | Leitfähigkeitsmodulations-Halbleiteranordnung und Verfahren zu ihrer Herstellung | |
| DE19818518C2 (de) | Halbleitervorrichtung und Verfahren zu deren Herstellung | |
| DE102006007096A1 (de) | MOSFET mit Kompensationsstruktur und Randabschluss | |
| DE2500235C2 (de) | Ein-PN-Übergang-Planartransistor | |
| DE3427293A1 (de) | Vertikale mosfet-einrichtung | |
| DE69025784T2 (de) | Nichtflüchtige Speicher-Halbleiteranordnung | |
| DE3408285C2 (ja) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OAM | Search report available | ||
| OC | Search report available | ||
| 8127 | New person/name/address of the applicant |
Owner name: LICENTIA PATENT-VERWALTUNGS-GMBH, 6000 FRANKFURT, |
|
| 8120 | Willingness to grant licences paragraph 23 | ||
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |