DE2843960C2 - - Google Patents

Info

Publication number
DE2843960C2
DE2843960C2 DE2843960A DE2843960A DE2843960C2 DE 2843960 C2 DE2843960 C2 DE 2843960C2 DE 2843960 A DE2843960 A DE 2843960A DE 2843960 A DE2843960 A DE 2843960A DE 2843960 C2 DE2843960 C2 DE 2843960C2
Authority
DE
Germany
Prior art keywords
zone
emitter
control base
thyristor
base zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE2843960A
Other languages
German (de)
English (en)
Other versions
DE2843960A1 (de
Inventor
Dieter Dr. Dipl.-Phys. 6053 Obertshausen De Silber
Marius Ing.(Grad.) 6078 Neu-Isenburg De Fuellmann
Wolfgang Ing.(Grad.) 6236 Eschborn De Winter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EUPEC GmbH
Original Assignee
EUPEC GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EUPEC GmbH filed Critical EUPEC GmbH
Priority to DE19782843960 priority Critical patent/DE2843960A1/de
Priority to US06/081,805 priority patent/US4282542A/en
Publication of DE2843960A1 publication Critical patent/DE2843960A1/de
Application granted granted Critical
Publication of DE2843960C2 publication Critical patent/DE2843960C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations

Landscapes

  • Thyristors (AREA)
DE19782843960 1978-10-09 1978-10-09 Stoerotentialkompensierter thyristor mit mindestens vier zonen unterschiedlichen leitfaehigkeittyps Granted DE2843960A1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE19782843960 DE2843960A1 (de) 1978-10-09 1978-10-09 Stoerotentialkompensierter thyristor mit mindestens vier zonen unterschiedlichen leitfaehigkeittyps
US06/081,805 US4282542A (en) 1978-10-09 1979-12-04 Interference-potential-compensated thyristor comprising at least four zones of different type of conductivity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782843960 DE2843960A1 (de) 1978-10-09 1978-10-09 Stoerotentialkompensierter thyristor mit mindestens vier zonen unterschiedlichen leitfaehigkeittyps

Publications (2)

Publication Number Publication Date
DE2843960A1 DE2843960A1 (de) 1980-04-10
DE2843960C2 true DE2843960C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-01-10

Family

ID=6051756

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19782843960 Granted DE2843960A1 (de) 1978-10-09 1978-10-09 Stoerotentialkompensierter thyristor mit mindestens vier zonen unterschiedlichen leitfaehigkeittyps

Country Status (2)

Country Link
US (1) US4282542A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2843960A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3005458A1 (de) * 1980-01-16 1981-07-23 BBC AG Brown, Boveri & Cie., Baden, Aargau Thyristor zum verlustarmen schalten kurzer impulse
JPS583283A (ja) * 1981-06-30 1983-01-10 Toshiba Corp サイリスタ
JPS5940576A (ja) * 1982-08-30 1984-03-06 Junichi Nishizawa フオトサイリスタ
US6339249B1 (en) * 1998-10-14 2002-01-15 Infineon Technologies Ag Semiconductor diode
US9140864B2 (en) * 2011-05-09 2015-09-22 Bae Systems Information And Electronic Systems Integration Inc. Methods for light coupling into power semiconductors

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2201041C3 (de) * 1972-01-11 1980-08-07 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
DE2210386A1 (de) * 1972-03-03 1973-09-06 Siemens Ag Thyristor
DE2300754A1 (de) * 1973-01-08 1974-07-11 Siemens Ag Thyristor
DE2407696C3 (de) * 1974-02-18 1979-02-01 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
US4122480A (en) * 1975-11-05 1978-10-24 Licentia Patent-Verwaltungs-G.M.B.H. Light fired thyristor with faulty firing protection
DE2549563C2 (de) * 1975-11-05 1983-07-14 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Lichtzündbarer Thyristor

Also Published As

Publication number Publication date
US4282542A (en) 1981-08-04
DE2843960A1 (de) 1980-04-10

Similar Documents

Publication Publication Date Title
DE2716874C2 (de) Thyristor
EP0572826B1 (de) Thyristor mit Durchbruchbereich
EP0021086B1 (de) Lichtsteuerbare Anordnung
DE2141627C3 (de) Thyristor
DE2843960C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE3240564A1 (de) Steuerbares halbleiterschaltelement
DE2739187C2 (de) Steuerbarer Halbleitergleichrichter mit einer Mehrzahl von Schichten unterschiedlichen Leitfähigkeitstyps
DE2238564A1 (de) Thyristor
DE1539630B1 (de) Steuerbare Halbleiteranordnung
EP0075720B1 (de) Lichtzündbarer Thyristor mit steuerbaren Emitter-Kurzschlüssen und Zündverstärkung
DE2549563C2 (de) Lichtzündbarer Thyristor
DE2406866C3 (de) Steuerbarer Halbleitergleichrichter
DE2201041C3 (de) Thyristor
DE3837747C2 (de) Halbleiterschalter mit einem Hauptthyristor und einem getrennten, lichtzündbaren Hilfsthyristor
DE2139559C3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE3238468C2 (de) Optisch zündbarer Thyristor
DE2715482C2 (de) Mit Licht steuerbarer Thyristor
DE2449089A1 (de) Halbleitergesteuerter gleichrichter
DE2157091C3 (de) Thyristor mit integrierter Diode
DE2123322C3 (de) Thyristor mit Kurzschlußemitter
DE1589538C3 (de) Thyristor
DE1539630C (de) Steuerbare Halbleiteranordnung
DE2246979C3 (de) Thyristor
EP0304032B1 (de) Lichtsteuerbarer Thyristor
AT236547B (de) Sperrschichtkondensator

Legal Events

Date Code Title Description
OAP Request for examination filed
OD Request for examination
8181 Inventor (new situation)

Free format text: SILBER, DIETER, DR. DIPL.-PHYS., 6053 OBERTSHAUSEN, DE FUELLMANN, MARIUS, ING.(GRAD.), 6078 NEU-ISENBURG, DE WINTER, WOLFGANG, ING.(GRAD.), 6236 ESCHBORN, DE

8120 Willingness to grant licences paragraph 23
8127 New person/name/address of the applicant

Owner name: EUPEC EUROPAEISCHE GESELLSCHAFT FUER LEISTUNGSHALB

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee