DE2842346C2 - CCD und Verfahren zum Betreiben eines solchen im Zwischenspaltenprinzip - Google Patents
CCD und Verfahren zum Betreiben eines solchen im ZwischenspaltenprinzipInfo
- Publication number
- DE2842346C2 DE2842346C2 DE2842346A DE2842346A DE2842346C2 DE 2842346 C2 DE2842346 C2 DE 2842346C2 DE 2842346 A DE2842346 A DE 2842346A DE 2842346 A DE2842346 A DE 2842346A DE 2842346 C2 DE2842346 C2 DE 2842346C2
- Authority
- DE
- Germany
- Prior art keywords
- sensor
- areas
- area
- potential
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title description 9
- 238000001444 catalytic combustion detection Methods 0.000 description 21
- 239000000758 substrate Substances 0.000 description 15
- 238000009413 insulation Methods 0.000 description 12
- 238000003860 storage Methods 0.000 description 9
- 239000012535 impurity Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 6
- 238000005036 potential barrier Methods 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
- H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
- H01J29/455—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/571—Control of the dynamic range involving a non-linear response
- H04N25/575—Control of the dynamic range involving a non-linear response with a response composed of multiple slopes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Picture Signal Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12688577A JPS5451318A (en) | 1977-09-29 | 1977-09-29 | Solid pickup unit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2842346A1 DE2842346A1 (de) | 1979-04-12 |
| DE2842346C2 true DE2842346C2 (de) | 1987-05-14 |
Family
ID=14946246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2842346A Expired DE2842346C2 (de) | 1977-09-29 | 1978-09-28 | CCD und Verfahren zum Betreiben eines solchen im Zwischenspaltenprinzip |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5451318A (xx) |
| CA (1) | CA1125421A (xx) |
| DE (1) | DE2842346C2 (xx) |
| FR (1) | FR2409646A1 (xx) |
| GB (1) | GB2007937B (xx) |
| NL (1) | NL7809866A (xx) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55151592U (xx) * | 1979-04-19 | 1980-10-31 | ||
| JPS55163882A (en) * | 1979-06-06 | 1980-12-20 | Nec Corp | System for driving charge transfer element |
| JPS55163953A (en) * | 1979-06-08 | 1980-12-20 | Nec Corp | Ccd shift register |
| JPS55163956A (en) * | 1979-06-08 | 1980-12-20 | Nec Corp | Shift register and its driving method |
| DE2939403A1 (de) * | 1979-09-28 | 1981-04-16 | Siemens AG, 1000 Berlin und 8000 München | Monolithisch integrierte schaltung zur zeilenweisen bildabtastung |
| JPS5665578A (en) * | 1979-10-31 | 1981-06-03 | Fujitsu Ltd | Two dimensional solidstate image sensor |
| JPS5685981A (en) * | 1979-12-15 | 1981-07-13 | Sharp Corp | Solid image pickup apparatus |
| JPS56104582A (en) * | 1980-01-25 | 1981-08-20 | Toshiba Corp | Solid image pickup device |
| JPS56136086A (en) * | 1980-03-27 | 1981-10-23 | Fujitsu Ltd | Two-dimensional image pickup device |
| JPS56160081A (en) * | 1980-05-14 | 1981-12-09 | Matsushita Electronics Corp | Solid state image pickup apparatus |
| DE3173604D1 (en) * | 1981-05-19 | 1986-03-13 | Texas Instruments Inc | Infrared imaging system with infrared detector matrix, and method of imaging infrared energy |
| DE3121494A1 (de) * | 1981-05-29 | 1983-01-05 | Siemens AG, 1000 Berlin und 8000 München | Anordnung zum beruehrungslosen messen von elektrischen ladungsbildern bei elektroradiographischen aufzeichnungsverfahren |
| EP0066020B1 (en) * | 1981-06-03 | 1985-10-23 | Texas Instruments Incorporated | Infrared energy detector system utilizing a charge transfer device sensor |
| JPS586682A (ja) * | 1981-07-06 | 1983-01-14 | Sony Corp | 固体撮像装置 |
| JPS5847378A (ja) * | 1981-09-17 | 1983-03-19 | Canon Inc | 撮像素子 |
| JPS58142570A (ja) * | 1982-02-19 | 1983-08-24 | Sony Corp | 固体撮像装置 |
| JPS60254770A (ja) * | 1984-05-31 | 1985-12-16 | Fujitsu Ltd | イメージセンサ |
| JPS61144874A (ja) * | 1984-12-19 | 1986-07-02 | Toshiba Corp | 電荷転送装置 |
| NL8503243A (nl) * | 1985-11-25 | 1987-06-16 | Optische Ind De Oude Delft Nv | Beeldopneeminrichting voor digitale radiografie. |
| JPH07107928B2 (ja) * | 1986-03-25 | 1995-11-15 | ソニー株式会社 | 固体撮像装置 |
| JPH02113678A (ja) * | 1988-10-21 | 1990-04-25 | Nec Corp | 固体撮像装置 |
| US5055667A (en) * | 1990-06-21 | 1991-10-08 | Loral Fairchild Corporation | Non-linear photosite response in CCD imagers |
| US5276520A (en) * | 1991-06-07 | 1994-01-04 | Eastman Kodak Company | Enhancing exposure latitude of image sensors |
| FR2687265A1 (fr) * | 1993-01-08 | 1993-08-13 | Scanera Sc | Dispositif de prise de vue electronique a haute dynamique et procede de prise de vue de scenes tres contrastees. |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5654115B2 (xx) * | 1974-03-29 | 1981-12-23 | ||
| US3931465A (en) * | 1975-01-13 | 1976-01-06 | Rca Corporation | Blooming control for charge coupled imager |
| JPS5937629B2 (ja) * | 1975-01-30 | 1984-09-11 | ソニー株式会社 | 固体撮像体 |
| US3953733A (en) * | 1975-05-21 | 1976-04-27 | Rca Corporation | Method of operating imagers |
| JPS5846905B2 (ja) * | 1975-11-10 | 1983-10-19 | ソニー株式会社 | コタイサツゾウソウチ |
| JPS52109825A (en) * | 1976-03-11 | 1977-09-14 | Sony Corp | Solid state pick up unit |
-
1977
- 1977-09-29 JP JP12688577A patent/JPS5451318A/ja active Pending
-
1978
- 1978-09-22 FR FR7827214A patent/FR2409646A1/fr active Granted
- 1978-09-28 CA CA312,252A patent/CA1125421A/en not_active Expired
- 1978-09-28 DE DE2842346A patent/DE2842346C2/de not_active Expired
- 1978-09-28 GB GB7838523A patent/GB2007937B/en not_active Expired
- 1978-09-29 NL NL7809866A patent/NL7809866A/xx not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| NL7809866A (nl) | 1979-04-02 |
| GB2007937B (en) | 1982-03-03 |
| CA1125421A (en) | 1982-06-08 |
| FR2409646B1 (xx) | 1983-11-18 |
| FR2409646A1 (fr) | 1979-06-15 |
| DE2842346A1 (de) | 1979-04-12 |
| GB2007937A (en) | 1979-05-23 |
| JPS5451318A (en) | 1979-04-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |