FR2409646A1 - Detecteur d'image en technique etat solide - Google Patents

Detecteur d'image en technique etat solide

Info

Publication number
FR2409646A1
FR2409646A1 FR7827214A FR7827214A FR2409646A1 FR 2409646 A1 FR2409646 A1 FR 2409646A1 FR 7827214 A FR7827214 A FR 7827214A FR 7827214 A FR7827214 A FR 7827214A FR 2409646 A1 FR2409646 A1 FR 2409646A1
Authority
FR
France
Prior art keywords
solid state
image detector
state technology
technology image
intervals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7827214A
Other languages
English (en)
Other versions
FR2409646B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2409646A1 publication Critical patent/FR2409646A1/fr
Application granted granted Critical
Publication of FR2409646B1 publication Critical patent/FR2409646B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
    • H01J29/455—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/571—Control of the dynamic range involving a non-linear response
    • H04N25/575—Control of the dynamic range involving a non-linear response with a response composed of multiple slopes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Picture Signal Circuits (AREA)

Abstract

A.DETECTEUR D'IMAGE EN TECHNIQUE ETAT SOLIDE. B.DETECTEUR CARACTERISE EN CE QUE LE SECOND MOYEN COMPREND UN TROISIEME MOYEN POUR FORMER LA SECONDE BARRIERE DE POTENTIEL POUR QUE LA QUANTITE DES CHARGES DE SIGNAL SOIT STOCKEE DANS LES REGIONS DE DETECTION A DES INSTANTS CORRESPONDANT A DES INTERVALLES INTERMITTENTS, CHOISIS A PARTIR DES INTERVALLES PREDETERMINES.
FR7827214A 1977-09-29 1978-09-22 Detecteur d'image en technique etat solide Granted FR2409646A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12688577A JPS5451318A (en) 1977-09-29 1977-09-29 Solid pickup unit

Publications (2)

Publication Number Publication Date
FR2409646A1 true FR2409646A1 (fr) 1979-06-15
FR2409646B1 FR2409646B1 (fr) 1983-11-18

Family

ID=14946246

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7827214A Granted FR2409646A1 (fr) 1977-09-29 1978-09-22 Detecteur d'image en technique etat solide

Country Status (6)

Country Link
JP (1) JPS5451318A (fr)
CA (1) CA1125421A (fr)
DE (1) DE2842346C2 (fr)
FR (1) FR2409646A1 (fr)
GB (1) GB2007937B (fr)
NL (1) NL7809866A (fr)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55151592U (fr) * 1979-04-19 1980-10-31
JPS55163882A (en) * 1979-06-06 1980-12-20 Nec Corp System for driving charge transfer element
JPS55163953A (en) * 1979-06-08 1980-12-20 Nec Corp Ccd shift register
JPS55163956A (en) * 1979-06-08 1980-12-20 Nec Corp Shift register and its driving method
DE2939403A1 (de) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte schaltung zur zeilenweisen bildabtastung
JPS5665578A (en) * 1979-10-31 1981-06-03 Fujitsu Ltd Two dimensional solidstate image sensor
JPS5685981A (en) * 1979-12-15 1981-07-13 Sharp Corp Solid image pickup apparatus
JPS56104582A (en) * 1980-01-25 1981-08-20 Toshiba Corp Solid image pickup device
JPS56136086A (en) * 1980-03-27 1981-10-23 Fujitsu Ltd Two-dimensional image pickup device
JPS56160081A (en) * 1980-05-14 1981-12-09 Matsushita Electronics Corp Solid state image pickup apparatus
DE3173604D1 (en) * 1981-05-19 1986-03-13 Texas Instruments Inc Infrared imaging system with infrared detector matrix, and method of imaging infrared energy
DE3121494A1 (de) * 1981-05-29 1983-01-05 Siemens AG, 1000 Berlin und 8000 München Anordnung zum beruehrungslosen messen von elektrischen ladungsbildern bei elektroradiographischen aufzeichnungsverfahren
EP0066020B1 (fr) * 1981-06-03 1985-10-23 Texas Instruments Incorporated Détecteur infrarouge utilisant un dispositif de capteurs à transfert de charges
JPS586682A (ja) * 1981-07-06 1983-01-14 Sony Corp 固体撮像装置
JPS5847378A (ja) * 1981-09-17 1983-03-19 Canon Inc 撮像素子
JPS58142570A (ja) * 1982-02-19 1983-08-24 Sony Corp 固体撮像装置
JPS60254770A (ja) * 1984-05-31 1985-12-16 Fujitsu Ltd イメージセンサ
JPS61144874A (ja) * 1984-12-19 1986-07-02 Toshiba Corp 電荷転送装置
NL8503243A (nl) * 1985-11-25 1987-06-16 Optische Ind De Oude Delft Nv Beeldopneeminrichting voor digitale radiografie.
JPH07107928B2 (ja) * 1986-03-25 1995-11-15 ソニー株式会社 固体撮像装置
JPH02113678A (ja) * 1988-10-21 1990-04-25 Nec Corp 固体撮像装置
US5055667A (en) * 1990-06-21 1991-10-08 Loral Fairchild Corporation Non-linear photosite response in CCD imagers
US5276520A (en) * 1991-06-07 1994-01-04 Eastman Kodak Company Enhancing exposure latitude of image sensors
FR2687265A1 (fr) * 1993-01-08 1993-08-13 Scanera Sc Dispositif de prise de vue electronique a haute dynamique et procede de prise de vue de scenes tres contrastees.

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3931465A (en) * 1975-01-13 1976-01-06 Rca Corporation Blooming control for charge coupled imager
US3953733A (en) * 1975-05-21 1976-04-27 Rca Corporation Method of operating imagers

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5654115B2 (fr) * 1974-03-29 1981-12-23
JPS5937629B2 (ja) * 1975-01-30 1984-09-11 ソニー株式会社 固体撮像体
JPS5846905B2 (ja) * 1975-11-10 1983-10-19 ソニー株式会社 コタイサツゾウソウチ
JPS52109825A (en) * 1976-03-11 1977-09-14 Sony Corp Solid state pick up unit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3931465A (en) * 1975-01-13 1976-01-06 Rca Corporation Blooming control for charge coupled imager
FR2297532A1 (fr) * 1975-01-13 1976-08-06 Rca Corp Procede de limitation de l'etalement des charges dans un dispositif a couplage de charge
US3953733A (en) * 1975-05-21 1976-04-27 Rca Corporation Method of operating imagers
FR2312147A1 (fr) * 1975-05-21 1976-12-17 Rca Corp Procede de mise en oeuvre d'un capteur d'images a couplage de charge

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/69 *
EXBK/72 *

Also Published As

Publication number Publication date
DE2842346C2 (de) 1987-05-14
NL7809866A (nl) 1979-04-02
GB2007937A (en) 1979-05-23
DE2842346A1 (de) 1979-04-12
CA1125421A (fr) 1982-06-08
GB2007937B (en) 1982-03-03
FR2409646B1 (fr) 1983-11-18
JPS5451318A (en) 1979-04-23

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Legal Events

Date Code Title Description
ST Notification of lapse