DE2833921C2 - - Google Patents
Info
- Publication number
- DE2833921C2 DE2833921C2 DE2833921A DE2833921A DE2833921C2 DE 2833921 C2 DE2833921 C2 DE 2833921C2 DE 2833921 A DE2833921 A DE 2833921A DE 2833921 A DE2833921 A DE 2833921A DE 2833921 C2 DE2833921 C2 DE 2833921C2
- Authority
- DE
- Germany
- Prior art keywords
- charge
- electrode
- signal
- register
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 claims description 76
- 238000007667 floating Methods 0.000 claims description 75
- 239000000758 substrate Substances 0.000 claims description 29
- 239000002800 charge carrier Substances 0.000 claims description 14
- 238000012546 transfer Methods 0.000 claims description 10
- 230000001105 regulatory effect Effects 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims 11
- 238000006073 displacement reaction Methods 0.000 claims 1
- 230000008054 signal transmission Effects 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 11
- 230000004888 barrier function Effects 0.000 description 9
- 230000006870 function Effects 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- 238000005036 potential barrier Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 6
- 238000007493 shaping process Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/452—Input structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
- G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Electrodes Of Semiconductors (AREA)
- Networks Using Active Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/821,318 US4139784A (en) | 1977-08-02 | 1977-08-02 | CCD Input circuits |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2833921A1 DE2833921A1 (de) | 1979-02-15 |
| DE2833921C2 true DE2833921C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-05-24 |
Family
ID=25233071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19782833921 Granted DE2833921A1 (de) | 1977-08-02 | 1978-08-02 | Ladungsgekoppelte schaltungsanordnung |
Country Status (9)
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2836473A1 (de) * | 1978-08-21 | 1980-03-06 | Siemens Ag | Ccd-eingangsschaltung nach dem fill and spill-prinzip |
| US4278947A (en) * | 1978-09-08 | 1981-07-14 | Bell Telephone Laboratories, Incorporated | Precision frequency source using integrated circuit elements |
| DE2839834A1 (de) * | 1978-09-13 | 1980-03-27 | Siemens Ag | Lineare ausgangsstufe fuer ladungsgekoppelte schaltungen |
| JPS55145368A (en) * | 1979-04-27 | 1980-11-12 | Toshiba Corp | Charge transfer device |
| US4389615A (en) * | 1979-08-29 | 1983-06-21 | Rockwell International Corporation | CCD Demodulator circuit |
| US4275315A (en) * | 1979-10-10 | 1981-06-23 | Hughes Aircraft Company | Charge summing filter aperture corrector |
| DE2943143A1 (de) * | 1979-10-25 | 1981-05-07 | Siemens AG, 1000 Berlin und 8000 München | Infrarotempfindler x-y-ccd-sensor und verfahren zu seiner herstellung |
| US4321486A (en) * | 1980-02-22 | 1982-03-23 | Honeywell Inc. | Photodetector signal control in charge transfer device imager |
| US4509181A (en) * | 1982-05-28 | 1985-04-02 | Rca Corporation | CCD charge substraction arrangement |
| US4513431A (en) * | 1982-06-07 | 1985-04-23 | International Business Machines Corporation | Charge coupled device output circuit structure |
| US4574384A (en) * | 1982-08-25 | 1986-03-04 | Hitachi, Ltd. | Signal transfer system using a charge transfer device |
| US4524450A (en) * | 1982-09-28 | 1985-06-18 | Rca Corporation | Automatic adjustment of the amplitudes of plural-phase CCD clocking voltages |
| JPS59132669A (ja) * | 1983-01-20 | 1984-07-30 | Sony Corp | 電荷転送装置 |
| US4700085A (en) * | 1983-11-21 | 1987-10-13 | Nec Corporation | Circuit for detecting signal charges transferred in a charge transfer device |
| JPH0721960B2 (ja) * | 1983-12-09 | 1995-03-08 | ソニー株式会社 | テレビジョン信号の遅延装置 |
| US5029189A (en) * | 1983-12-09 | 1991-07-02 | Sony Corporation | Input structure for charge coupled devices with controllable input bias |
| FR2557372B1 (fr) * | 1983-12-27 | 1986-04-11 | Thomson Csf | Procede d'ebasage d'un dispositif photosensible a l'etat solide |
| US5177772A (en) * | 1984-12-06 | 1993-01-05 | Sony Corporation | Charge coupled device with enhanced input structure |
| DD231682A1 (de) * | 1984-12-20 | 1986-01-02 | Werk Fernsehelektronik Veb | Eingangsschaltung fuer ladungsgekoppelte bauelemente |
| NL8500863A (nl) * | 1985-03-25 | 1986-10-16 | Philips Nv | Ladingsoverdrachtinrichting. |
| US4603426A (en) * | 1985-04-04 | 1986-07-29 | Rca Corporation | Floating-diffusion charge sensing for buried-channel CCD using a doubled clocking voltage |
| US4644572A (en) * | 1985-11-12 | 1987-02-17 | Eastman Kodak Company | Fill and spill for charge input to a CCD |
| US5247554A (en) * | 1987-01-16 | 1993-09-21 | Kabushiki Kaisha Toshiba | Charge detection circuit |
| NL8701528A (nl) * | 1987-06-30 | 1989-01-16 | Philips Nv | Halfgeleiderinrichting voozien van een ladingsoverdrachtinrichting. |
| US5210777A (en) * | 1989-04-17 | 1993-05-11 | Sony Corporation | Charge coupled device having switched inverting and non-inverting input signal paths, input biassing circuit and temperature compensation |
| US5182623A (en) * | 1989-11-13 | 1993-01-26 | Texas Instruments Incorporated | Charge coupled device/charge super sweep image system and method for making |
| JPH043436A (ja) * | 1990-04-20 | 1992-01-08 | Fuji Photo Film Co Ltd | Ｃｃｄ遅延線 |
| JP2570464B2 (ja) * | 1990-05-08 | 1997-01-08 | 日本電気株式会社 | 電荷転送装置の電荷検出回路 |
| JPH0821712B2 (ja) * | 1990-06-12 | 1996-03-04 | 株式会社東芝 | 電荷転送素子の入力バイアス回路 |
| US5291083A (en) * | 1993-01-12 | 1994-03-01 | Hewlett-Packard Company | Bucket brigade analog delay line with voltage limiting feedback |
| JP3647390B2 (ja) * | 2000-06-08 | 2005-05-11 | キヤノン株式会社 | 電荷転送装置、固体撮像装置及び撮像システム |
| US7846760B2 (en) * | 2006-05-31 | 2010-12-07 | Kenet, Inc. | Doped plug for CCD gaps |
| US9380239B2 (en) * | 2013-09-11 | 2016-06-28 | Varian Medical Systems, Inc. | Pixel circuit with constant voltage biased photodiode and related imaging method |
| US11064142B1 (en) | 2013-09-11 | 2021-07-13 | Varex Imaging Corporation | Imaging system with a digital conversion circuit for generating a digital correlated signal sample and related imaging method |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3660697A (en) * | 1970-02-16 | 1972-05-02 | Bell Telephone Labor Inc | Monolithic semiconductor apparatus adapted for sequential charge transfer |
| US3858232A (en) * | 1970-02-16 | 1974-12-31 | Bell Telephone Labor Inc | Information storage devices |
| AU461729B2 (en) * | 1971-01-14 | 1975-06-05 | Rca Corporation | Charge coupled circuits |
| US3986198A (en) * | 1973-06-13 | 1976-10-12 | Rca Corporation | Introducing signal at low noise level to charge-coupled circuit |
| JPS5649397B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1974-02-18 | 1981-11-21 | ||
| US4047051A (en) * | 1975-10-24 | 1977-09-06 | International Business Machines Corporation | Method and apparatus for replicating a charge packet |
| US4071775A (en) * | 1976-04-02 | 1978-01-31 | Texas Instruments Incorporated | Charge coupled differential amplifier for transversal filter |
| US4040077A (en) * | 1976-08-18 | 1977-08-02 | Honeywell Information Systems, Inc. | Time-independent ccd charge amplifier |
| AU511885B2 (en) * | 1977-01-10 | 1980-09-11 | Rca Corp. | Linear ccd input circuit |
-
1977
- 1977-08-02 US US05/821,318 patent/US4139784A/en not_active Ceased
-
1978
- 1978-07-10 SE SE7807686A patent/SE438218B/sv not_active IP Right Cessation
- 1978-07-14 IT IT25708/78A patent/IT1097954B/it active
- 1978-07-28 CA CA000308410A patent/CA1120588A/en not_active Expired
- 1978-08-01 GB GB7831846A patent/GB2002173B/en not_active Expired
- 1978-08-01 JP JP9447078A patent/JPS5427779A/ja active Granted
- 1978-08-01 GB GB8024587A patent/GB2070855B/en not_active Expired
- 1978-08-01 NL NL787808105A patent/NL7808105A/xx not_active Application Discontinuation
- 1978-08-02 DE DE19782833921 patent/DE2833921A1/de active Granted
- 1978-08-02 FR FR7822870A patent/FR2399739A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| CA1120588A (en) | 1982-03-23 |
| GB2070855B (en) | 1982-10-13 |
| IT7825708A0 (it) | 1978-07-14 |
| JPS5427779A (en) | 1979-03-02 |
| JPS576704B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1982-02-06 |
| DE2833921A1 (de) | 1979-02-15 |
| GB2002173B (en) | 1982-03-31 |
| GB2070855A (en) | 1981-09-09 |
| US4139784A (en) | 1979-02-13 |
| GB2002173A (en) | 1979-02-14 |
| FR2399739B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1983-08-05 |
| SE7807686L (sv) | 1979-02-03 |
| IT1097954B (it) | 1985-08-31 |
| SE438218B (sv) | 1985-04-01 |
| FR2399739A1 (fr) | 1979-03-02 |
| NL7808105A (nl) | 1979-02-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2833921C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE2501934C2 (de) | Verfahren zum Betrieb eines ladungsgekoppelten Halbleiter-Bauelementes und ladungsgekoppeltes Halbleiter-Bauelement zur Durchführung dieses Verfahrens | |
| DE2558549C3 (de) | Anordnung zur Regelung des Potentials in einem MOS-CCD-Speicher | |
| DE1920077C2 (de) | Schaltungsanordnung zum Übertragen von Ladungen | |
| DE3128331A1 (de) | "c-mos-oszillatorschaltung" | |
| DE2528316A1 (de) | Von einer ladungsuebertragungsvorrichtung gebildete signalverarbeitungsanordnung | |
| DE3244322A1 (de) | Schnell arbeitender analog/digital-umsetzer | |
| DE3879557T2 (de) | Halbleiteranordnung mit einer Ladungsübertragungsanordnung. | |
| DE1947937A1 (de) | Inverter mit Isolierschicht-Feldeffekttransistoren | |
| DE2844248C3 (de) | Ladungsübertragungsanordnung | |
| DE3615545C2 (de) | Ladungsgekoppeltes Bauelement | |
| DE2419064A1 (de) | Analoginverter | |
| DE2616476A1 (de) | Ladungsregenerator fuer eine halbleiter-ladungsuebertragungsvorrichtung | |
| DE3323799C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE2721812A1 (de) | Auswerteschaltung fuer eine ladungsverschiebeanordnung | |
| DE2820580A1 (de) | Transversalfilter mit elektronisch einstellbaren gewichtungsfaktoren | |
| DE3874960T2 (de) | Eingangsschaltung fuer eine ladungsuebertragungsanordnung. | |
| DE2638942C2 (de) | Ladungsgekoppelte Anordnung | |
| DE3736735C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE2430947C2 (de) | Halbleiterspeichereinheit | |
| DE69115527T2 (de) | Ladungsübertragungsvorrichtung | |
| DE2657281C3 (de) | MIS-Inverterschaltung | |
| DE69220126T2 (de) | Ladungsgekoppelte Anordnung | |
| DE69020233T2 (de) | Ladungsschieberegister mit verbesserter Eingangsstruktur. | |
| DE2820836C2 (de) | Ladungsgekoppeltes Rekursivfilter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OAP | Request for examination filed | ||
| OD | Request for examination | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |