DE2826486C2 - - Google Patents

Info

Publication number
DE2826486C2
DE2826486C2 DE2826486A DE2826486A DE2826486C2 DE 2826486 C2 DE2826486 C2 DE 2826486C2 DE 2826486 A DE2826486 A DE 2826486A DE 2826486 A DE2826486 A DE 2826486A DE 2826486 C2 DE2826486 C2 DE 2826486C2
Authority
DE
Germany
Prior art keywords
layer
semiconductor layer
electrode
recess
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2826486A
Other languages
German (de)
English (en)
Other versions
DE2826486A1 (de
Inventor
Hiroyuki Kobayasi
Masafumi Kawasaki Jp Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE2826486A1 publication Critical patent/DE2826486A1/de
Application granted granted Critical
Publication of DE2826486C2 publication Critical patent/DE2826486C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H10W72/07236—
    • H10W72/884—
    • H10W90/724—
    • H10W90/754—

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
DE19782826486 1977-06-17 1978-06-16 Lichtemittierende halbleitervorrichtung und verfahren zu ihrer herstellung Granted DE2826486A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7241777A JPS546787A (en) 1977-06-17 1977-06-17 Luminous element

Publications (2)

Publication Number Publication Date
DE2826486A1 DE2826486A1 (de) 1979-01-25
DE2826486C2 true DE2826486C2 (enExample) 1987-11-26

Family

ID=13488675

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19782826486 Granted DE2826486A1 (de) 1977-06-17 1978-06-16 Lichtemittierende halbleitervorrichtung und verfahren zu ihrer herstellung

Country Status (4)

Country Link
US (1) US4316208A (enExample)
JP (1) JPS546787A (enExample)
CA (1) CA1112749A (enExample)
DE (1) DE2826486A1 (enExample)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4396929A (en) * 1979-10-19 1983-08-02 Matsushita Electric Industrial Company, Ltd. Gallium nitride light-emitting element and method of manufacturing the same
US4476620A (en) * 1979-10-19 1984-10-16 Matsushita Electric Industrial Co., Ltd. Method of making a gallium nitride light-emitting diode
DE3172935D1 (en) * 1980-02-28 1986-01-02 Toshiba Kk Iii - v group compound semiconductor light-emitting element and method of producing the same
JPS5866198U (ja) * 1981-10-30 1983-05-06 株式会社東芝 フアンガ−ドの取付構造
DE3208638A1 (de) * 1982-03-10 1983-09-22 Siemens AG, 1000 Berlin und 8000 München Lumineszenzdiode aus siliziumkarbid
JPS58213491A (ja) * 1982-06-07 1983-12-12 Omron Tateisi Electronics Co 半導体レ−ザ
JPS5954065U (ja) * 1982-10-04 1984-04-09 三菱電機株式会社 空気調和機の風漏れ防止装置
KR890002811B1 (ko) * 1986-11-04 1989-07-31 삼성전자 주식회사 히트 싱크를 겸한 과전류 파괴방지용 집적회로를 내장한 발광소자 패키지
DE8711105U1 (de) * 1987-08-14 1987-11-26 Siemens AG, 1000 Berlin und 8000 München Leiterplatte für die Elektronik
JP2588213B2 (ja) * 1987-09-30 1997-03-05 株式会社東芝 半導体発光素子およびその製造方法
JP3022565B2 (ja) * 1988-09-13 2000-03-21 株式会社日立製作所 半導体装置
US5220199A (en) * 1988-09-13 1993-06-15 Hitachi, Ltd. Semiconductor integrated circuit device in which a semiconductor chip is mounted with solder bumps for mounting to a wiring substrate
JPH03292779A (ja) * 1990-04-10 1991-12-24 Matsushita Electric Ind Co Ltd 発光素子およびその製造方法
US5281830A (en) * 1990-10-27 1994-01-25 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US5149958A (en) * 1990-12-12 1992-09-22 Eastman Kodak Company Optoelectronic device component package
JPH04103666U (ja) * 1991-02-18 1992-09-07 日亜化学工業株式会社 青色発光デバイスの電極
JP2666228B2 (ja) * 1991-10-30 1997-10-22 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子
JP2796919B2 (ja) * 1992-05-11 1998-09-10 インターナショナル・ビジネス・マシーンズ・コーポレーション メタライゼーション複合体および半導体デバイス
DE69433926T2 (de) 1993-04-28 2005-07-21 Nichia Corp., Anan Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung
US5472886A (en) * 1994-12-27 1995-12-05 At&T Corp. Structure of and method for manufacturing an LED
JP3228858B2 (ja) * 1995-10-17 2001-11-12 アルプス電気株式会社 発光ダイオード装置
JPH08250770A (ja) * 1995-12-28 1996-09-27 Nichia Chem Ind Ltd 発光デバイスの製造方法
US6235141B1 (en) * 1996-09-27 2001-05-22 Digital Optics Corporation Method of mass producing and packaging integrated optical subsystems
GB2325080A (en) * 1997-05-07 1998-11-11 Mitel Semiconductor Ab Mountings for semiconductor light emitting devices
US6107122A (en) * 1997-08-04 2000-08-22 Micron Technology, Inc. Direct die contact (DDC) semiconductor package
JPH11220170A (ja) * 1998-01-29 1999-08-10 Rohm Co Ltd 発光ダイオード素子
US6184544B1 (en) * 1998-01-29 2001-02-06 Rohm Co., Ltd. Semiconductor light emitting device with light reflective current diffusion layer
US6331450B1 (en) * 1998-12-22 2001-12-18 Toyoda Gosei Co., Ltd. Method of manufacturing semiconductor device using group III nitride compound
US6888171B2 (en) * 2000-12-22 2005-05-03 Dallan Luming Science & Technology Group Co., Ltd. Light emitting diode
US6940704B2 (en) 2001-01-24 2005-09-06 Gelcore, Llc Semiconductor light emitting device
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
JP2003086843A (ja) * 2001-09-14 2003-03-20 Sharp Corp 半導体発光素子及び半導体発光装置
USD491897S1 (en) 2002-07-09 2004-06-22 Nichia Corporation Light emitting diode
USD491898S1 (en) 2002-07-31 2004-06-22 Nichia Corporation Light emitting diode
RU2231171C1 (ru) * 2003-04-30 2004-06-20 Закрытое акционерное общество "Инновационная фирма "ТЕТИС" Светоизлучающий диод
US20070110361A1 (en) * 2003-08-26 2007-05-17 Digital Optics Corporation Wafer level integration of multiple optical elements
US7417220B2 (en) 2004-09-09 2008-08-26 Toyoda Gosei Co., Ltd. Solid state device and light-emitting element
KR20080014727A (ko) * 2004-12-27 2008-02-14 퀀덤 페이퍼, 인크. 어드레스 가능 및 프린트 가능 발광 디스플레이
US9419179B2 (en) 2007-05-31 2016-08-16 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US9534772B2 (en) 2007-05-31 2017-01-03 Nthdegree Technologies Worldwide Inc Apparatus with light emitting diodes
US9018833B2 (en) 2007-05-31 2015-04-28 Nthdegree Technologies Worldwide Inc Apparatus with light emitting or absorbing diodes
US8809126B2 (en) 2007-05-31 2014-08-19 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US8456393B2 (en) * 2007-05-31 2013-06-04 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system
US8877101B2 (en) 2007-05-31 2014-11-04 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, power generating or other electronic apparatus
US8852467B2 (en) 2007-05-31 2014-10-07 Nthdegree Technologies Worldwide Inc Method of manufacturing a printable composition of a liquid or gel suspension of diodes
US9343593B2 (en) 2007-05-31 2016-05-17 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US8133768B2 (en) * 2007-05-31 2012-03-13 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system
US8846457B2 (en) 2007-05-31 2014-09-30 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US8889216B2 (en) * 2007-05-31 2014-11-18 Nthdegree Technologies Worldwide Inc Method of manufacturing addressable and static electronic displays
US9425357B2 (en) 2007-05-31 2016-08-23 Nthdegree Technologies Worldwide Inc. Diode for a printable composition
US8674593B2 (en) 2007-05-31 2014-03-18 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US8415879B2 (en) 2007-05-31 2013-04-09 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US8127477B2 (en) 2008-05-13 2012-03-06 Nthdegree Technologies Worldwide Inc Illuminating display systems
US7992332B2 (en) 2008-05-13 2011-08-09 Nthdegree Technologies Worldwide Inc. Apparatuses for providing power for illumination of a display object
KR100986440B1 (ko) 2009-04-28 2010-10-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
JP5197654B2 (ja) * 2010-03-09 2013-05-15 株式会社東芝 半導体発光装置及びその製造方法
JP6107060B2 (ja) 2011-12-26 2017-04-05 日亜化学工業株式会社 発光装置の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3307049A (en) * 1963-12-20 1967-02-28 Siemens Ag Turnoff-controllable thyristor and method of its operation
GB1143633A (enExample) * 1965-03-10 1900-01-01
SE311701B (enExample) * 1966-07-07 1969-06-23 Asea Ab
US3517278A (en) * 1967-10-02 1970-06-23 Teledyne Inc Flip chip structure
DE1789063A1 (de) * 1968-09-30 1971-12-30 Siemens Ag Traeger fuer Halbleiterbauelemente
US3593070A (en) * 1968-12-17 1971-07-13 Texas Instruments Inc Submount for semiconductor assembly
US3761782A (en) * 1971-05-19 1973-09-25 Signetics Corp Semiconductor structure, assembly and method
US3950233A (en) * 1973-07-30 1976-04-13 Signetics Corporation Method for fabricating a semiconductor structure
JPS5734671B2 (enExample) * 1974-09-20 1982-07-24
JPS52104091A (en) * 1976-02-27 1977-09-01 Hitachi Ltd Light-emitting semiconductor
US4097890A (en) * 1976-06-23 1978-06-27 Hewlett-Packard Company Low parasitic capacitance and resistance beamlead semiconductor component and method of manufacture
US4097887A (en) * 1976-09-13 1978-06-27 General Electric Company Low resistance, durable gate contact pad for thyristors

Also Published As

Publication number Publication date
DE2826486A1 (de) 1979-01-25
CA1112749A (en) 1981-11-17
JPS546787A (en) 1979-01-19
US4316208A (en) 1982-02-16
JPS5649468B2 (enExample) 1981-11-21

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Legal Events

Date Code Title Description
OAP Request for examination filed
OD Request for examination
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee