DE2816795C2 - - Google Patents

Info

Publication number
DE2816795C2
DE2816795C2 DE2816795A DE2816795A DE2816795C2 DE 2816795 C2 DE2816795 C2 DE 2816795C2 DE 2816795 A DE2816795 A DE 2816795A DE 2816795 A DE2816795 A DE 2816795A DE 2816795 C2 DE2816795 C2 DE 2816795C2
Authority
DE
Germany
Prior art keywords
mask layer
surface area
trough
mask
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2816795A
Other languages
German (de)
English (en)
Other versions
DE2816795A1 (de
Inventor
John T. Melbourne Fla. Us Gasner
Anthony L. Palm Bay Fla. Us Rivoli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Harris Corp
Original Assignee
Harris Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Harris Corp filed Critical Harris Corp
Publication of DE2816795A1 publication Critical patent/DE2816795A1/de
Application granted granted Critical
Publication of DE2816795C2 publication Critical patent/DE2816795C2/de
Granted legal-status Critical Current

Links

Classifications

    • H10P76/40—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H10W10/0127—
    • H10W10/13—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/07—Guard rings and cmos

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE19782816795 1977-09-21 1978-04-18 Verfahren zur herstellung eines substrats fuer einen cmos-schaltkreis und nach einem solchen verfahren hergestellter schaltkreis Granted DE2816795A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/835,263 US4135955A (en) 1977-09-21 1977-09-21 Process for fabricating high voltage cmos with self-aligned guard rings utilizing selective diffusion and local oxidation

Publications (2)

Publication Number Publication Date
DE2816795A1 DE2816795A1 (de) 1979-04-05
DE2816795C2 true DE2816795C2 (index.php) 1989-10-05

Family

ID=25269065

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19782816795 Granted DE2816795A1 (de) 1977-09-21 1978-04-18 Verfahren zur herstellung eines substrats fuer einen cmos-schaltkreis und nach einem solchen verfahren hergestellter schaltkreis

Country Status (5)

Country Link
US (1) US4135955A (index.php)
DE (1) DE2816795A1 (index.php)
FR (1) FR2404300A1 (index.php)
GB (1) GB1581498A (index.php)
IT (1) IT1161684B (index.php)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4485390A (en) * 1978-03-27 1984-11-27 Ncr Corporation Narrow channel FET
US4313768A (en) * 1978-04-06 1982-02-02 Harris Corporation Method of fabricating improved radiation hardened self-aligned CMOS having Si doped Al field gate
US4402002A (en) * 1978-04-06 1983-08-30 Harris Corporation Radiation hardened-self aligned CMOS and method of fabrication
IT1166587B (it) * 1979-01-22 1987-05-05 Ates Componenti Elettron Processo per la fabbricazione di transistori mos complementari ad alta integrazione per tensioni elevate
US4295897B1 (en) * 1979-10-03 1997-09-09 Texas Instruments Inc Method of making cmos integrated circuit device
US4295266A (en) * 1980-06-30 1981-10-20 Rca Corporation Method of manufacturing bulk CMOS integrated circuits
GB2084794B (en) * 1980-10-03 1984-07-25 Philips Electronic Associated Methods of manufacturing insulated gate field effect transistors
JPS5791553A (en) * 1980-11-29 1982-06-07 Toshiba Corp Semiconductor device
US4385947A (en) * 1981-07-29 1983-05-31 Harris Corporation Method for fabricating CMOS in P substrate with single guard ring using local oxidation
US4613885A (en) * 1982-02-01 1986-09-23 Texas Instruments Incorporated High-voltage CMOS process
US4435895A (en) * 1982-04-05 1984-03-13 Bell Telephone Laboratories, Incorporated Process for forming complementary integrated circuit devices
IT1210872B (it) * 1982-04-08 1989-09-29 Ates Componenti Elettron Processo per la fabbricazione di transistori mos complementari in circuiti integrati ad alta densita' per tensioni elevate.
US4412375A (en) * 1982-06-10 1983-11-01 Intel Corporation Method for fabricating CMOS devices with guardband
US4480375A (en) * 1982-12-09 1984-11-06 International Business Machines Corporation Simple process for making complementary transistors
US4471523A (en) * 1983-05-02 1984-09-18 International Business Machines Corporation Self-aligned field implant for oxide-isolated CMOS FET
US4574467A (en) * 1983-08-31 1986-03-11 Solid State Scientific, Inc. N- well CMOS process on a P substrate with double field guard rings and a PMOS buried channel
US4517731A (en) * 1983-09-29 1985-05-21 Fairchild Camera & Instrument Corporation Double polysilicon process for fabricating CMOS integrated circuits
US4567640A (en) * 1984-05-22 1986-02-04 Data General Corporation Method of fabricating high density CMOS devices
US4600445A (en) * 1984-09-14 1986-07-15 International Business Machines Corporation Process for making self aligned field isolation regions in a semiconductor substrate
US4757363A (en) * 1984-09-14 1988-07-12 Harris Corporation ESD protection network for IGFET circuits with SCR prevention guard rings
US4713329A (en) * 1985-07-22 1987-12-15 Data General Corporation Well mask for CMOS process
US4925806A (en) * 1988-03-17 1990-05-15 Northern Telecom Limited Method for making a doped well in a semiconductor substrate
TW328650B (en) * 1996-08-27 1998-03-21 United Microelectronics Corp The MOS device and its manufacturing method
JP3931138B2 (ja) * 2002-12-25 2007-06-13 三菱電機株式会社 電力用半導体装置及び電力用半導体装置の製造方法
RU2674415C1 (ru) * 2018-03-06 2018-12-07 Акционерное общество Научно-производственный центр "Электронные вычислительно-информационные системы" (АО НПЦ "ЭЛВИС") Радиационно-стойкая библиотека элементов на комплементарных металл-окисел-полупроводник транзисторах

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3673428A (en) * 1970-09-18 1972-06-27 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
US3712995A (en) * 1972-03-27 1973-01-23 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
US3853633A (en) * 1972-12-04 1974-12-10 Motorola Inc Method of making a semi planar insulated gate field-effect transistor device with implanted field
US3888706A (en) * 1973-08-06 1975-06-10 Rca Corp Method of making a compact guard-banded mos integrated circuit device using framelike diffusion-masking structure
US4027380A (en) * 1974-06-03 1977-06-07 Fairchild Camera And Instrument Corporation Complementary insulated gate field effect transistor structure and process for fabricating the structure
US3983620A (en) * 1975-05-08 1976-10-05 National Semiconductor Corporation Self-aligned CMOS process for bulk silicon and insulating substrate device
US4006491A (en) * 1975-05-15 1977-02-01 Motorola, Inc. Integrated circuit having internal main supply voltage regulator
US4045250A (en) * 1975-08-04 1977-08-30 Rca Corporation Method of making a semiconductor device
JPS5286083A (en) * 1976-01-12 1977-07-16 Hitachi Ltd Production of complimentary isolation gate field effect transistor
US4013484A (en) * 1976-02-25 1977-03-22 Intel Corporation High density CMOS process

Also Published As

Publication number Publication date
IT7812700A0 (it) 1978-07-07
FR2404300A1 (fr) 1979-04-20
DE2816795A1 (de) 1979-04-05
FR2404300B1 (index.php) 1983-01-21
IT1161684B (it) 1987-03-18
US4135955A (en) 1979-01-23
GB1581498A (en) 1980-12-17

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8125 Change of the main classification

Ipc: H01L 21/72

8128 New person/name/address of the agent

Representative=s name: WILHELM, H., DR.-ING. DAUSTER, H., DIPL.-ING., PAT

D2 Grant after examination
8364 No opposition during term of opposition