DE2810920C2 - Verfahren zur Herstellung eines Bildschirmes einer Bildverstärkerröhre - Google Patents
Verfahren zur Herstellung eines Bildschirmes einer BildverstärkerröhreInfo
- Publication number
- DE2810920C2 DE2810920C2 DE19782810920 DE2810920A DE2810920C2 DE 2810920 C2 DE2810920 C2 DE 2810920C2 DE 19782810920 DE19782810920 DE 19782810920 DE 2810920 A DE2810920 A DE 2810920A DE 2810920 C2 DE2810920 C2 DE 2810920C2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- substrate
- recesses
- groove
- phosphor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 81
- 239000000758 substrate Substances 0.000 claims description 67
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 19
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 12
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 10
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- 239000011651 chromium Substances 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 4
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 4
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 239000011572 manganese Substances 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000011230 binding agent Substances 0.000 claims description 2
- 238000009835 boiling Methods 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 239000012811 non-conductive material Substances 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 235000011121 sodium hydroxide Nutrition 0.000 claims description 2
- 239000004593 Epoxy Substances 0.000 claims 1
- 238000003384 imaging method Methods 0.000 claims 1
- 239000002904 solvent Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000005406 washing Methods 0.000 claims 1
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 5
- 239000000057 synthetic resin Substances 0.000 description 5
- 229920003002 synthetic resin Polymers 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001962 electrophoresis Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N monobenzene Natural products C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 2
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- JLTDJTHDQAWBAV-UHFFFAOYSA-N N,N-dimethylaniline Chemical compound CN(C)C1=CC=CC=C1 JLTDJTHDQAWBAV-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- AAOSJTCFZATALK-UHFFFAOYSA-N O=[Mo+2].N Chemical compound O=[Mo+2].N AAOSJTCFZATALK-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- -1 benzene peroxide Chemical class 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 150000001844 chromium Chemical class 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000010344 sodium nitrate Nutrition 0.000 description 1
- 239000004317 sodium nitrate Substances 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/38—Photoelectric screens; Charge-storage screens not using charge storage, e.g. photo-emissive screen, extended cathode
- H01J29/385—Photocathodes comprising a layer which modified the wave length of impinging radiation
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K4/00—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/50—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output
- H01J31/501—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output with an electrostatic electron optic system
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52027106A JPS5916701B2 (ja) | 1977-03-14 | 1977-03-14 | 像増倍管の入力スクリ−ン及びその製造方法 |
JP52102571A JPS5913133B2 (ja) | 1977-08-29 | 1977-08-29 | 螢光面の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE2810920A1 DE2810920A1 (de) | 1978-09-21 |
DE2810920C2 true DE2810920C2 (de) | 1987-01-15 |
Family
ID=26364994
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19782810920 Expired DE2810920C2 (de) | 1977-03-14 | 1978-03-14 | Verfahren zur Herstellung eines Bildschirmes einer Bildverstärkerröhre |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE2810920C2 (it) |
FR (1) | FR2384349A1 (it) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2929745C2 (de) * | 1979-07-23 | 1986-03-27 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Herstellung eines Eingangsleuchtschirms eines Röntgenbildverstärkers |
JPS5871536A (ja) * | 1981-10-22 | 1983-04-28 | Toshiba Corp | X線像増倍管の入力面及びその製造方法 |
FR2530367A1 (fr) * | 1982-07-13 | 1984-01-20 | Thomson Csf | Ecran scintillateur convertisseur de rayonnement et procede de fabrication d'un tel ecran |
DE69726252T2 (de) * | 1996-09-18 | 2004-08-26 | Kabushiki Kaisha Toshiba | Röntgenbildröhre und herstellungsverfahren für dieselbe |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1308672A (en) * | 1969-03-07 | 1973-02-21 | Fuji Photo Film Co Ltd | Radiographic intensifying screens |
BE786084A (fr) * | 1971-07-10 | 1973-01-10 | Philips Nv | Ecran luminescent a structure en mosaique |
US4184077A (en) * | 1976-05-11 | 1980-01-15 | Tokyo Shibaura Electric Co., Ltd. | Input screen of an image intensifier |
-
1978
- 1978-03-14 FR FR7807311A patent/FR2384349A1/fr active Granted
- 1978-03-14 DE DE19782810920 patent/DE2810920C2/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2384349A1 (fr) | 1978-10-13 |
FR2384349B1 (it) | 1982-02-26 |
DE2810920A1 (de) | 1978-09-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE2413942C3 (de) | Verfahren zur Herstellung von Dunnfilm-Feldemissions-Elektronenquellen | |
DE3106368C2 (de) | Gleichstrom-Gasentladungsanzeigevorrichtung | |
DE4433097C2 (de) | Verfahren zum Herstellen einer lichtabsorbierenden Schicht einer Solarzelle | |
DE2554691C2 (de) | Verfahren zum Herstellen elektrischer Leiter auf einem isolierenden Substrat und danach hergestellte Dünnschichtschaltung | |
DE2052424C3 (de) | Verfahren zum Herstellen elektrischer Leitungsverbindungen | |
DE69814664T2 (de) | Feldemissionsvorrichtungen | |
DE69513054T2 (de) | Herstellungsverfahren einer elektrode für eine elektrochemische vorrichtung | |
EP0780871B1 (de) | Strukturierte Oberfläche mit spitzenförmigen Elementen | |
DE102009008152A1 (de) | Siliziumsolarzelle | |
WO2009021713A1 (de) | Verfahren zur herstellung eines halbleiter-bauelements, halbleiter-bauelement sowie zwischenprodukt bei der herstellung desselben | |
EP0170130B1 (de) | Leuchtschirm für Bildanzeigegeräte und Verfahren zu seiner Herstellung | |
DE2901697B2 (de) | Verfahren zur Ausbildung von Verbindungsleitungen auf einem Substrat | |
DE2202520A1 (de) | Metall-Isolieraufbau | |
DE2549861C3 (de) | Verfahren zur Anbringung von lokalisierten Kontakten auf einer Dünnschichtschaltung | |
DE2810920C2 (de) | Verfahren zur Herstellung eines Bildschirmes einer Bildverstärkerröhre | |
DE3408849C2 (de) | Verfahren zur Herstellung geschichteter Vielkanalplatten aus Metall für Bildverstärker und Verwendung der so hergestellten Vielkanalplatten | |
DE69304394T2 (de) | Reflektierende photoelektrische Oberfläche und Photovervielfacher | |
DE2635245A1 (de) | Verfahren zur herstellung elektrisch leitender indiumoxidmuster auf einem isolierenden traeger | |
DE4310604A1 (de) | Feldemissions-Kathodenaufbau, Verfahren zur Herstellung desselben und diesen verwendende Flachschirm-Anzeigeeinrichtung | |
DE2721280C2 (de) | Verfahren zur Herstellung eines Eingangbildschirms eines Bildverstärkers | |
DE1564424A1 (de) | Sandwichfoermiges Elektrodensystem,insbesondere Halbleiterelektrodensystem,und Verfahren zu seiner Herstellung | |
DE2754526A1 (de) | Verfahren zur herstellung einer fotokathode fuer elektroradiographische und elektrofluoroskopische apparate | |
DE69507418T2 (de) | Verfahren zur Herstellung einer Mikrospitzen-Elektronenquelle | |
DE2540301C2 (de) | Verfahren zur Herstellung einer Halbleiteranordnung mit einem Leitermuster | |
DE3124087C2 (de) | Elektrochrome Anzeigevorrichtung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8110 | Request for examination paragraph 44 | ||
D2 | Grant after examination | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP |
|
8364 | No opposition during term of opposition |