DE2742936C3 - Nichtflüchtiger Langzeitspeicher - Google Patents

Nichtflüchtiger Langzeitspeicher

Info

Publication number
DE2742936C3
DE2742936C3 DE2742936A DE2742936A DE2742936C3 DE 2742936 C3 DE2742936 C3 DE 2742936C3 DE 2742936 A DE2742936 A DE 2742936A DE 2742936 A DE2742936 A DE 2742936A DE 2742936 C3 DE2742936 C3 DE 2742936C3
Authority
DE
Germany
Prior art keywords
capacitance
stage
layer
long
term memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2742936A
Other languages
German (de)
English (en)
Other versions
DE2742936A1 (de
DE2742936B2 (de
Inventor
Alain Gif Sur Yvette Bert
Gerard Parly Ii Kantorowicz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of DE2742936A1 publication Critical patent/DE2742936A1/de
Publication of DE2742936B2 publication Critical patent/DE2742936B2/de
Application granted granted Critical
Publication of DE2742936C3 publication Critical patent/DE2742936C3/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/005—Arrangements for selecting an address in a digital store with travelling wave access
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
DE2742936A 1976-09-24 1977-09-23 Nichtflüchtiger Langzeitspeicher Expired DE2742936C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7628765A FR2365858A1 (fr) 1976-09-24 1976-09-24 Memoire non volatile de longue duree pour signaux rapides

Publications (3)

Publication Number Publication Date
DE2742936A1 DE2742936A1 (de) 1978-03-30
DE2742936B2 DE2742936B2 (de) 1980-02-07
DE2742936C3 true DE2742936C3 (de) 1980-10-30

Family

ID=9178047

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2742936A Expired DE2742936C3 (de) 1976-09-24 1977-09-23 Nichtflüchtiger Langzeitspeicher

Country Status (4)

Country Link
US (1) US4110839A (enExample)
DE (1) DE2742936C3 (enExample)
FR (1) FR2365858A1 (enExample)
GB (1) GB1590044A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4246502A (en) * 1978-08-16 1981-01-20 Mitel Corporation Means for coupling incompatible signals to an integrated circuit and for deriving operating supply therefrom
US4363110A (en) * 1980-12-22 1982-12-07 International Business Machines Corp. Non-volatile dynamic RAM cell
JP2795408B2 (ja) * 1987-03-24 1998-09-10 ソニー 株式会社 メモリ装置
JPH01146354A (ja) * 1987-12-02 1989-06-08 Mitsubishi Electric Corp 半導体記憶装置
US5079606A (en) * 1989-01-26 1992-01-07 Casio Computer Co., Ltd. Thin-film memory element
JPH0660635A (ja) * 1992-08-06 1994-03-04 Olympus Optical Co Ltd 強誘電体メモリ装置
US6987689B2 (en) * 2003-08-20 2006-01-17 International Business Machines Corporation Non-volatile multi-stable memory device and methods of making and using the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3729719A (en) * 1970-11-27 1973-04-24 Ibm Stored charge storage cell using a non latching scr type device

Also Published As

Publication number Publication date
GB1590044A (en) 1981-05-28
US4110839A (en) 1978-08-29
DE2742936A1 (de) 1978-03-30
FR2365858B1 (enExample) 1981-11-06
DE2742936B2 (de) 1980-02-07
FR2365858A1 (fr) 1978-04-21

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Legal Events

Date Code Title Description
OAP Request for examination filed
OD Request for examination
C3 Grant after two publication steps (3rd publication)