GB1590044A - Non-volatile long memory for fast signals - Google Patents
Non-volatile long memory for fast signals Download PDFInfo
- Publication number
- GB1590044A GB1590044A GB39431/77A GB3943177A GB1590044A GB 1590044 A GB1590044 A GB 1590044A GB 39431/77 A GB39431/77 A GB 39431/77A GB 3943177 A GB3943177 A GB 3943177A GB 1590044 A GB1590044 A GB 1590044A
- Authority
- GB
- United Kingdom
- Prior art keywords
- capacitor
- stage
- layer
- terminal
- terminals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015654 memory Effects 0.000 title claims description 23
- 239000003990 capacitor Substances 0.000 claims description 57
- 239000000758 substrate Substances 0.000 claims description 41
- 239000004065 semiconductor Substances 0.000 claims description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 238000003860 storage Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 10
- 239000002800 charge carrier Substances 0.000 claims description 9
- 230000006870 function Effects 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 3
- 238000009825 accumulation Methods 0.000 claims description 2
- 230000000644 propagated effect Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 3
- 239000003795 chemical substances by application Substances 0.000 claims 2
- 229920001296 polysiloxane Polymers 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 239000002184 metal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000005684 electric field Effects 0.000 description 8
- 239000012212 insulator Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 101100396523 Caenorhabditis elegans ife-1 gene Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000005527 interface trap Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/005—Arrangements for selecting an address in a digital store with travelling wave access
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7628765A FR2365858A1 (fr) | 1976-09-24 | 1976-09-24 | Memoire non volatile de longue duree pour signaux rapides |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1590044A true GB1590044A (en) | 1981-05-28 |
Family
ID=9178047
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB39431/77A Expired GB1590044A (en) | 1976-09-24 | 1977-09-21 | Non-volatile long memory for fast signals |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4110839A (enExample) |
| DE (1) | DE2742936C3 (enExample) |
| FR (1) | FR2365858A1 (enExample) |
| GB (1) | GB1590044A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4246502A (en) * | 1978-08-16 | 1981-01-20 | Mitel Corporation | Means for coupling incompatible signals to an integrated circuit and for deriving operating supply therefrom |
| US4363110A (en) * | 1980-12-22 | 1982-12-07 | International Business Machines Corp. | Non-volatile dynamic RAM cell |
| JP2795408B2 (ja) * | 1987-03-24 | 1998-09-10 | ソニー 株式会社 | メモリ装置 |
| JPH01146354A (ja) * | 1987-12-02 | 1989-06-08 | Mitsubishi Electric Corp | 半導体記憶装置 |
| US5079606A (en) * | 1989-01-26 | 1992-01-07 | Casio Computer Co., Ltd. | Thin-film memory element |
| JPH0660635A (ja) * | 1992-08-06 | 1994-03-04 | Olympus Optical Co Ltd | 強誘電体メモリ装置 |
| US6987689B2 (en) * | 2003-08-20 | 2006-01-17 | International Business Machines Corporation | Non-volatile multi-stable memory device and methods of making and using the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3729719A (en) * | 1970-11-27 | 1973-04-24 | Ibm | Stored charge storage cell using a non latching scr type device |
-
1976
- 1976-09-24 FR FR7628765A patent/FR2365858A1/fr active Granted
-
1977
- 1977-09-20 US US05/835,010 patent/US4110839A/en not_active Expired - Lifetime
- 1977-09-21 GB GB39431/77A patent/GB1590044A/en not_active Expired
- 1977-09-23 DE DE2742936A patent/DE2742936C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2742936C3 (de) | 1980-10-30 |
| US4110839A (en) | 1978-08-29 |
| DE2742936A1 (de) | 1978-03-30 |
| FR2365858B1 (enExample) | 1981-11-06 |
| DE2742936B2 (de) | 1980-02-07 |
| FR2365858A1 (fr) | 1978-04-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PE20 | Patent expired after termination of 20 years |
Effective date: 19970920 |