DE2737527A1 - Verfahren zur herstellung einer ladungsuebertragungsvorrichtung - Google Patents

Verfahren zur herstellung einer ladungsuebertragungsvorrichtung

Info

Publication number
DE2737527A1
DE2737527A1 DE19772737527 DE2737527A DE2737527A1 DE 2737527 A1 DE2737527 A1 DE 2737527A1 DE 19772737527 DE19772737527 DE 19772737527 DE 2737527 A DE2737527 A DE 2737527A DE 2737527 A1 DE2737527 A1 DE 2737527A1
Authority
DE
Germany
Prior art keywords
layer
substrate
polycrystalline silicon
masking
silicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19772737527
Other languages
German (de)
English (en)
Inventor
Yoshiaki Hagiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE2737527A1 publication Critical patent/DE2737527A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/01—Manufacture or treatment
    • H10D44/041—Manufacture or treatment having insulated gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/335—Channel regions of field-effect devices of charge-coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0198—Integrating together multiple components covered by H10D44/00, e.g. integrating charge coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H10P76/40—

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Element Separation (AREA)
DE19772737527 1976-08-20 1977-08-19 Verfahren zur herstellung einer ladungsuebertragungsvorrichtung Withdrawn DE2737527A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9996176A JPS5325373A (en) 1976-08-20 1976-08-20 Production of charge transfer device

Publications (1)

Publication Number Publication Date
DE2737527A1 true DE2737527A1 (de) 1978-02-23

Family

ID=14261265

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19772737527 Withdrawn DE2737527A1 (de) 1976-08-20 1977-08-19 Verfahren zur herstellung einer ladungsuebertragungsvorrichtung

Country Status (7)

Country Link
US (1) US4133099A (enExample)
JP (1) JPS5325373A (enExample)
CA (1) CA1097429A (enExample)
DE (1) DE2737527A1 (enExample)
FR (1) FR2362489A1 (enExample)
GB (1) GB1576144A (enExample)
NL (1) NL7709116A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5217771A (en) * 1975-07-31 1977-02-09 Sony Corp Charge transfer device
US4242692A (en) * 1978-06-02 1980-12-30 Sony Corporation Charge transfer device which has a pair of straight portions joined by a direction changing portion
US4987466A (en) * 1988-06-07 1991-01-22 Kabushiki Kaisha Toshiba Solid state image sensor
US5292682A (en) * 1993-07-06 1994-03-08 Eastman Kodak Company Method of making two-phase charge coupled device
JP2008277787A (ja) * 2007-03-30 2008-11-13 Nec Electronics Corp 電荷転送装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3853634A (en) * 1973-05-21 1974-12-10 Fairchild Camera Instr Co Self-aligned implanted barrier two-phase charge coupled devices
DE2342923C2 (de) * 1973-08-24 1975-10-23 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer Zweiphasen-Ladungsverschlebeanordnung und nach diesem Verfahren hergestellte Zweiphasen-Ladungs Verschiebeanordnung
US3936860A (en) * 1973-12-11 1976-02-03 Hill Bryan H Fabrication of a semiconductor device
JPS51114079A (en) * 1975-03-31 1976-10-07 Fujitsu Ltd Construction of semiconductor memory device
US4057895A (en) * 1976-09-20 1977-11-15 General Electric Company Method of forming sloped members of N-type polycrystalline silicon

Also Published As

Publication number Publication date
FR2362489B1 (enExample) 1983-11-18
US4133099A (en) 1979-01-09
NL7709116A (nl) 1978-02-22
FR2362489A1 (fr) 1978-03-17
JPS5325373A (en) 1978-03-09
CA1097429A (en) 1981-03-10
GB1576144A (en) 1980-10-01

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Legal Events

Date Code Title Description
8141 Disposal/no request for examination