JPS5325373A - Production of charge transfer device - Google Patents

Production of charge transfer device

Info

Publication number
JPS5325373A
JPS5325373A JP9996176A JP9996176A JPS5325373A JP S5325373 A JPS5325373 A JP S5325373A JP 9996176 A JP9996176 A JP 9996176A JP 9996176 A JP9996176 A JP 9996176A JP S5325373 A JPS5325373 A JP S5325373A
Authority
JP
Japan
Prior art keywords
production
transfer device
charge transfer
position relations
stopper regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9996176A
Other languages
English (en)
Japanese (ja)
Inventor
Yoshiaki Hagiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP9996176A priority Critical patent/JPS5325373A/ja
Priority to US05/821,183 priority patent/US4133099A/en
Priority to GB33558/77A priority patent/GB1576144A/en
Priority to FR7725054A priority patent/FR2362489A1/fr
Priority to CA284,877A priority patent/CA1097429A/en
Priority to NL7709116A priority patent/NL7709116A/xx
Priority to DE19772737527 priority patent/DE2737527A1/de
Publication of JPS5325373A publication Critical patent/JPS5325373A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/01—Manufacture or treatment
    • H10D44/041—Manufacture or treatment having insulated gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/335—Channel regions of field-effect devices of charge-coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0198—Integrating together multiple components covered by H10D44/00, e.g. integrating charge coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H10P76/40—

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Element Separation (AREA)
JP9996176A 1976-08-20 1976-08-20 Production of charge transfer device Pending JPS5325373A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP9996176A JPS5325373A (en) 1976-08-20 1976-08-20 Production of charge transfer device
US05/821,183 US4133099A (en) 1976-08-20 1977-08-02 Method of manufacturing a charge transfer device
GB33558/77A GB1576144A (en) 1976-08-20 1977-08-10 Methods of manufacturing charge transfer devices
FR7725054A FR2362489A1 (fr) 1976-08-20 1977-08-16 Procede de fabrication d'un dispositif a transfert de charges et dispositif obtenu
CA284,877A CA1097429A (en) 1976-08-20 1977-08-17 Method of manufacturing a charge transfer device
NL7709116A NL7709116A (nl) 1976-08-20 1977-08-17 Werkwijze voor het vervaardigen van een ladingoverdraaginrichting.
DE19772737527 DE2737527A1 (de) 1976-08-20 1977-08-19 Verfahren zur herstellung einer ladungsuebertragungsvorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9996176A JPS5325373A (en) 1976-08-20 1976-08-20 Production of charge transfer device

Publications (1)

Publication Number Publication Date
JPS5325373A true JPS5325373A (en) 1978-03-09

Family

ID=14261265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9996176A Pending JPS5325373A (en) 1976-08-20 1976-08-20 Production of charge transfer device

Country Status (7)

Country Link
US (1) US4133099A (enExample)
JP (1) JPS5325373A (enExample)
CA (1) CA1097429A (enExample)
DE (1) DE2737527A1 (enExample)
FR (1) FR2362489A1 (enExample)
GB (1) GB1576144A (enExample)
NL (1) NL7709116A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5217771A (en) * 1975-07-31 1977-02-09 Sony Corp Charge transfer device
US4242692A (en) * 1978-06-02 1980-12-30 Sony Corporation Charge transfer device which has a pair of straight portions joined by a direction changing portion
US4987466A (en) * 1988-06-07 1991-01-22 Kabushiki Kaisha Toshiba Solid state image sensor
US5292682A (en) * 1993-07-06 1994-03-08 Eastman Kodak Company Method of making two-phase charge coupled device
JP2008277787A (ja) * 2007-03-30 2008-11-13 Nec Electronics Corp 電荷転送装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3853634A (en) * 1973-05-21 1974-12-10 Fairchild Camera Instr Co Self-aligned implanted barrier two-phase charge coupled devices
DE2342923C2 (de) * 1973-08-24 1975-10-23 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer Zweiphasen-Ladungsverschlebeanordnung und nach diesem Verfahren hergestellte Zweiphasen-Ladungs Verschiebeanordnung
US3936860A (en) * 1973-12-11 1976-02-03 Hill Bryan H Fabrication of a semiconductor device
JPS51114079A (en) * 1975-03-31 1976-10-07 Fujitsu Ltd Construction of semiconductor memory device
US4057895A (en) * 1976-09-20 1977-11-15 General Electric Company Method of forming sloped members of N-type polycrystalline silicon

Also Published As

Publication number Publication date
FR2362489B1 (enExample) 1983-11-18
US4133099A (en) 1979-01-09
DE2737527A1 (de) 1978-02-23
NL7709116A (nl) 1978-02-22
FR2362489A1 (fr) 1978-03-17
CA1097429A (en) 1981-03-10
GB1576144A (en) 1980-10-01

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