FR2362489A1 - Procede de fabrication d'un dispositif a transfert de charges et dispositif obtenu - Google Patents
Procede de fabrication d'un dispositif a transfert de charges et dispositif obtenuInfo
- Publication number
- FR2362489A1 FR2362489A1 FR7725054A FR7725054A FR2362489A1 FR 2362489 A1 FR2362489 A1 FR 2362489A1 FR 7725054 A FR7725054 A FR 7725054A FR 7725054 A FR7725054 A FR 7725054A FR 2362489 A1 FR2362489 A1 FR 2362489A1
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- load transfer
- layer
- transfer device
- selectively
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 230000000873 masking effect Effects 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66946—Charge transfer devices
- H01L29/66954—Charge transfer devices with an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1062—Channel region of field-effect devices of charge coupled devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Element Separation (AREA)
Abstract
a. Procédé de fabrication d'un dispositif à transfert de charges et dispositif connu. b. Procédé caractérisé en ce qu'on forme une seconde couche de masquage pour enlever sélectivement la couche de silicium polycristalhn, on diffuse sélectivement une impureté de dopage dans la couche de silicium polycristallin à travers la première couche de masquage, on enlève sélectivement la couche de silicium polycristallin avec une première et une seconde couches de masquage et on forme des ouvertures dans la couche de silicium polycristallin et on diffuse sélectivement une impureté de dopage dans le substrat à travers les ouvertures.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9996176A JPS5325373A (en) | 1976-08-20 | 1976-08-20 | Production of charge transfer device |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2362489A1 true FR2362489A1 (fr) | 1978-03-17 |
FR2362489B1 FR2362489B1 (fr) | 1983-11-18 |
Family
ID=14261265
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7725054A Granted FR2362489A1 (fr) | 1976-08-20 | 1977-08-16 | Procede de fabrication d'un dispositif a transfert de charges et dispositif obtenu |
Country Status (7)
Country | Link |
---|---|
US (1) | US4133099A (fr) |
JP (1) | JPS5325373A (fr) |
CA (1) | CA1097429A (fr) |
DE (1) | DE2737527A1 (fr) |
FR (1) | FR2362489A1 (fr) |
GB (1) | GB1576144A (fr) |
NL (1) | NL7709116A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2427663A1 (fr) * | 1978-06-02 | 1979-12-28 | Sony Corp | Dispositif a transfert de charges |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5217771A (en) * | 1975-07-31 | 1977-02-09 | Sony Corp | Charge transfer device |
US4987466A (en) * | 1988-06-07 | 1991-01-22 | Kabushiki Kaisha Toshiba | Solid state image sensor |
US5292682A (en) * | 1993-07-06 | 1994-03-08 | Eastman Kodak Company | Method of making two-phase charge coupled device |
JP2008277787A (ja) * | 2007-03-30 | 2008-11-13 | Nec Electronics Corp | 電荷転送装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2231113A1 (fr) * | 1973-05-21 | 1974-12-20 | Fairchild Camera Instr Co |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2342923C2 (de) * | 1973-08-24 | 1975-10-23 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung einer Zweiphasen-Ladungsverschlebeanordnung und nach diesem Verfahren hergestellte Zweiphasen-Ladungs Verschiebeanordnung |
US3936860A (en) * | 1973-12-11 | 1976-02-03 | Hill Bryan H | Fabrication of a semiconductor device |
JPS51114079A (en) * | 1975-03-31 | 1976-10-07 | Fujitsu Ltd | Construction of semiconductor memory device |
US4057895A (en) * | 1976-09-20 | 1977-11-15 | General Electric Company | Method of forming sloped members of N-type polycrystalline silicon |
-
1976
- 1976-08-20 JP JP9996176A patent/JPS5325373A/ja active Pending
-
1977
- 1977-08-02 US US05/821,183 patent/US4133099A/en not_active Expired - Lifetime
- 1977-08-10 GB GB33558/77A patent/GB1576144A/en not_active Expired
- 1977-08-16 FR FR7725054A patent/FR2362489A1/fr active Granted
- 1977-08-17 CA CA284,877A patent/CA1097429A/fr not_active Expired
- 1977-08-17 NL NL7709116A patent/NL7709116A/xx not_active Application Discontinuation
- 1977-08-19 DE DE19772737527 patent/DE2737527A1/de not_active Withdrawn
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2231113A1 (fr) * | 1973-05-21 | 1974-12-20 | Fairchild Camera Instr Co |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2427663A1 (fr) * | 1978-06-02 | 1979-12-28 | Sony Corp | Dispositif a transfert de charges |
Also Published As
Publication number | Publication date |
---|---|
FR2362489B1 (fr) | 1983-11-18 |
NL7709116A (nl) | 1978-02-22 |
US4133099A (en) | 1979-01-09 |
DE2737527A1 (de) | 1978-02-23 |
GB1576144A (en) | 1980-10-01 |
JPS5325373A (en) | 1978-03-09 |
CA1097429A (fr) | 1981-03-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2346856A1 (fr) | Procede de piegeage d'impuretes utilisant du silicium polycristallin sur la face arriere d'un bloc semi-conducteur | |
JPS5681974A (en) | Manufacture of mos type semiconductor device | |
FR2430093A1 (fr) | Procede de fabrication d'un dispositif a couplage de charges | |
FR2362489A1 (fr) | Procede de fabrication d'un dispositif a transfert de charges et dispositif obtenu | |
DE2960880D1 (en) | Process for producing epitaxial layers on selectively doped silicon substrates with high impurity concentration | |
JPS57109367A (en) | Semiconductor memory device | |
JPS55138877A (en) | Method of fabricating semiconductor device | |
JPS5559759A (en) | Semiconductor device | |
JPS5521102A (en) | Semiconductor memory cell | |
JPS5683073A (en) | Semiconductor device | |
JPS57133637A (en) | Semiconductor integrated circuit device | |
JPS5347781A (en) | Production of silicon gate semiconductor device | |
JPS57141966A (en) | Manufacture of semiconductor device | |
JPS57192080A (en) | Semiconductor device | |
JPS5753958A (ja) | Handotaisochi | |
JPS5651871A (en) | Manufacture of complementary type mos semiconductor device | |
KR810002083B1 (en) | Fabricating method of silicon controlled rectifier element | |
JPS57122571A (en) | Manufacture of semiconductor device | |
JPS5691476A (en) | Semiconductor | |
JPS54162477A (en) | Lateral transistor | |
JPS5323578A (en) | Production of mos type integrated circuit device | |
JPS5632755A (en) | Semiconductor device | |
JPS57204145A (en) | Manufacture of semiconductor device | |
JPS55151332A (en) | Fabricating method of semiconductor device | |
JPS5475991A (en) | Junction-type field effect transistor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |