DE2720653C2 - - Google Patents
Info
- Publication number
- DE2720653C2 DE2720653C2 DE2720653A DE2720653A DE2720653C2 DE 2720653 C2 DE2720653 C2 DE 2720653C2 DE 2720653 A DE2720653 A DE 2720653A DE 2720653 A DE2720653 A DE 2720653A DE 2720653 C2 DE2720653 C2 DE 2720653C2
- Authority
- DE
- Germany
- Prior art keywords
- resistor
- voltage
- resistance
- epitaxial layer
- resistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000012937 correction Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- BIJOYKCOMBZXAE-UHFFFAOYSA-N chromium iron nickel Chemical compound [Cr].[Fe].[Ni] BIJOYKCOMBZXAE-UHFFFAOYSA-N 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/43—Resistors having PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/326—Application of electric currents or fields, e.g. for electroforming
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Analogue/Digital Conversion (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7615001A FR2351505A1 (fr) | 1976-05-13 | 1976-05-13 | Procede de correction du coefficient en tension de resistances semi-conductrices, implantees ou diffusees |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2720653A1 DE2720653A1 (de) | 1977-12-01 |
| DE2720653C2 true DE2720653C2 (forum.php) | 1989-03-16 |
Family
ID=9173307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19772720653 Granted DE2720653A1 (de) | 1976-05-13 | 1977-05-07 | Verfahren und schaltungsanordnung zur korrektur der spannungsabhaengigkeit von halbleiterwiderstaenden |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS52137988A (forum.php) |
| DE (1) | DE2720653A1 (forum.php) |
| FR (1) | FR2351505A1 (forum.php) |
| GB (1) | GB1517266A (forum.php) |
| IT (1) | IT1115304B (forum.php) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4329639A1 (de) * | 1993-09-02 | 1995-03-09 | Telefunken Microelectron | Schaltungsanordnung mit gesteuerten Pinch-Widerständen |
| DE10135169A1 (de) * | 2001-07-19 | 2003-02-06 | Bosch Gmbh Robert | Widerstandsanordnung und Strommesser |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4229753A (en) * | 1977-08-18 | 1980-10-21 | International Business Machines Corporation | Voltage compensation of temperature coefficient of resistance in an integrated circuit resistor |
| SE7900379L (sv) * | 1978-01-25 | 1979-07-26 | Western Electric Co | Halvledare-integrerad-krets |
| JPS5516489A (en) * | 1978-07-24 | 1980-02-05 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor resistance device |
| DE3009042A1 (de) * | 1979-03-19 | 1980-10-02 | Trw Inc | Halbleiterwiderstand |
| JPS55140260A (en) * | 1979-04-16 | 1980-11-01 | Fujitsu Ltd | Semiconductor device |
| NL8203323A (nl) * | 1982-08-25 | 1984-03-16 | Philips Nv | Geintegreerde weerstand. |
| DE3276513D1 (en) * | 1982-11-26 | 1987-07-09 | Ibm | Self-biased resistor structure and application to interface circuits realization |
| DE3376045D1 (en) * | 1983-10-19 | 1988-04-21 | Itt Ind Gmbh Deutsche | Monolithic integrated circuit with at least one integrated resistor |
| JPS63244765A (ja) * | 1987-03-31 | 1988-10-12 | Toshiba Corp | 拡散抵抗を有する集積回路 |
| JPH0423355A (ja) * | 1990-05-15 | 1992-01-27 | Hitachi Ltd | 半導体装置 |
| US8384157B2 (en) | 2006-05-10 | 2013-02-26 | International Rectifier Corporation | High ohmic integrated resistor with improved linearity |
| JP2012109535A (ja) | 2010-10-20 | 2012-06-07 | Asahi Kasei Electronics Co Ltd | 抵抗素子及び反転バッファ回路 |
| JP6269936B2 (ja) * | 2013-12-26 | 2018-01-31 | 横河電機株式会社 | 集積回路 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3270258A (en) * | 1963-07-05 | 1966-08-30 | Int Rectifier Corp | Field effect transistor |
| JPS515759A (ja) * | 1974-07-03 | 1976-01-17 | Hitachi Ltd | Sokoki |
| JPS515277A (forum.php) * | 1974-07-04 | 1976-01-16 | Tatsuo Okazaki | |
| DE2435606C3 (de) * | 1974-07-24 | 1979-03-01 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Reihenschaltung aus Feldeffekttransistoren zur Realisierung eines hxxochohmigen linearen Widerstandes |
-
1976
- 1976-05-13 FR FR7615001A patent/FR2351505A1/fr active Granted
-
1977
- 1977-04-25 GB GB17024/77A patent/GB1517266A/en not_active Expired
- 1977-05-07 DE DE19772720653 patent/DE2720653A1/de active Granted
- 1977-05-10 JP JP5274977A patent/JPS52137988A/ja active Granted
- 1977-05-11 IT IT23418/77A patent/IT1115304B/it active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4329639A1 (de) * | 1993-09-02 | 1995-03-09 | Telefunken Microelectron | Schaltungsanordnung mit gesteuerten Pinch-Widerständen |
| DE10135169A1 (de) * | 2001-07-19 | 2003-02-06 | Bosch Gmbh Robert | Widerstandsanordnung und Strommesser |
| DE10135169B4 (de) * | 2001-07-19 | 2004-02-19 | Robert Bosch Gmbh | Widerstandsanordnung und Strommesser |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2720653A1 (de) | 1977-12-01 |
| JPS575059B2 (forum.php) | 1982-01-28 |
| FR2351505B1 (forum.php) | 1979-10-12 |
| JPS52137988A (en) | 1977-11-17 |
| GB1517266A (en) | 1978-07-12 |
| FR2351505A1 (fr) | 1977-12-09 |
| IT1115304B (it) | 1986-02-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |