DE2720653A1 - Verfahren und schaltungsanordnung zur korrektur der spannungsabhaengigkeit von halbleiterwiderstaenden - Google Patents

Verfahren und schaltungsanordnung zur korrektur der spannungsabhaengigkeit von halbleiterwiderstaenden

Info

Publication number
DE2720653A1
DE2720653A1 DE19772720653 DE2720653A DE2720653A1 DE 2720653 A1 DE2720653 A1 DE 2720653A1 DE 19772720653 DE19772720653 DE 19772720653 DE 2720653 A DE2720653 A DE 2720653A DE 2720653 A1 DE2720653 A1 DE 2720653A1
Authority
DE
Germany
Prior art keywords
epitaxial layer
voltage
resistance
circuit arrangement
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19772720653
Other languages
German (de)
English (en)
Other versions
DE2720653C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Francois Xavier Delaporte
Robert Michael Hornung
Anne-Marie Lamouroux
Gerard Maxime Lebesnerais
Jean-Paul Jules Nuez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2720653A1 publication Critical patent/DE2720653A1/de
Application granted granted Critical
Publication of DE2720653C2 publication Critical patent/DE2720653C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/326—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Analogue/Digital Conversion (AREA)
DE19772720653 1976-05-13 1977-05-07 Verfahren und schaltungsanordnung zur korrektur der spannungsabhaengigkeit von halbleiterwiderstaenden Granted DE2720653A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7615001A FR2351505A1 (fr) 1976-05-13 1976-05-13 Procede de correction du coefficient en tension de resistances semi-conductrices, implantees ou diffusees

Publications (2)

Publication Number Publication Date
DE2720653A1 true DE2720653A1 (de) 1977-12-01
DE2720653C2 DE2720653C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-03-16

Family

ID=9173307

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19772720653 Granted DE2720653A1 (de) 1976-05-13 1977-05-07 Verfahren und schaltungsanordnung zur korrektur der spannungsabhaengigkeit von halbleiterwiderstaenden

Country Status (5)

Country Link
JP (1) JPS52137988A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2720653A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2351505A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1517266A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT1115304B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3328958A1 (de) * 1982-08-25 1984-03-01 Philips Nv Integrierter widerstand
US5451908A (en) * 1993-09-02 1995-09-19 Temic Telefunken Microelectronic Gmbh Circuit arrangement with controlled pinch resistors

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4229753A (en) * 1977-08-18 1980-10-21 International Business Machines Corporation Voltage compensation of temperature coefficient of resistance in an integrated circuit resistor
SE7900379L (sv) * 1978-01-25 1979-07-26 Western Electric Co Halvledare-integrerad-krets
JPS5516489A (en) * 1978-07-24 1980-02-05 Nippon Telegr & Teleph Corp <Ntt> Semiconductor resistance device
DE3009042A1 (de) * 1979-03-19 1980-10-02 Trw Inc Halbleiterwiderstand
JPS55140260A (en) * 1979-04-16 1980-11-01 Fujitsu Ltd Semiconductor device
DE3276513D1 (en) * 1982-11-26 1987-07-09 Ibm Self-biased resistor structure and application to interface circuits realization
DE3376045D1 (en) * 1983-10-19 1988-04-21 Itt Ind Gmbh Deutsche Monolithic integrated circuit with at least one integrated resistor
JPS63244765A (ja) * 1987-03-31 1988-10-12 Toshiba Corp 拡散抵抗を有する集積回路
JPH0423355A (ja) * 1990-05-15 1992-01-27 Hitachi Ltd 半導体装置
DE10135169B4 (de) * 2001-07-19 2004-02-19 Robert Bosch Gmbh Widerstandsanordnung und Strommesser
US8384157B2 (en) 2006-05-10 2013-02-26 International Rectifier Corporation High ohmic integrated resistor with improved linearity
JP2012109535A (ja) 2010-10-20 2012-06-07 Asahi Kasei Electronics Co Ltd 抵抗素子及び反転バッファ回路
JP6269936B2 (ja) * 2013-12-26 2018-01-31 横河電機株式会社 集積回路

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3270258A (en) * 1963-07-05 1966-08-30 Int Rectifier Corp Field effect transistor
DE2435606A1 (de) * 1974-07-24 1976-02-05 Siemens Ag Reihenschaltung

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS515759A (ja) * 1974-07-03 1976-01-17 Hitachi Ltd Sokoki
JPS515277A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-07-04 1976-01-16 Tatsuo Okazaki

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3270258A (en) * 1963-07-05 1966-08-30 Int Rectifier Corp Field effect transistor
DE2435606A1 (de) * 1974-07-24 1976-02-05 Siemens Ag Reihenschaltung

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
"Wescon Technical Papers", Bd. 15, 1971, Ref. 8080-28/2, S.1-7 *
Datenbuch Fa Teledyne Semicond. "JFET, applications and speif", Juni 1972 *
Electronics, 6.11.1972, S. 98-101 *
Feldeffekt-Transistoren, J. Wüsthube, 1969, S. 14-17 und S. 21-23 *
Halbleiter SChaltungstechnik, U. Tietze, Ch. Schenk, 1971, S. 130-133 *
Journ. Vac. Sci. Techn., Vol. 10, Nr. 6, Nov-Dez 1973, S. 944-947 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3328958A1 (de) * 1982-08-25 1984-03-01 Philips Nv Integrierter widerstand
US5451908A (en) * 1993-09-02 1995-09-19 Temic Telefunken Microelectronic Gmbh Circuit arrangement with controlled pinch resistors

Also Published As

Publication number Publication date
JPS575059B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-01-28
DE2720653C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-03-16
IT1115304B (it) 1986-02-03
GB1517266A (en) 1978-07-12
JPS52137988A (en) 1977-11-17
FR2351505A1 (fr) 1977-12-09
FR2351505B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1979-10-12

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee