DE2706519C2 - Verfahren zum Reinigen der Oberfläche von polierten Siliciumplättchen - Google Patents

Verfahren zum Reinigen der Oberfläche von polierten Siliciumplättchen

Info

Publication number
DE2706519C2
DE2706519C2 DE2706519A DE2706519A DE2706519C2 DE 2706519 C2 DE2706519 C2 DE 2706519C2 DE 2706519 A DE2706519 A DE 2706519A DE 2706519 A DE2706519 A DE 2706519A DE 2706519 C2 DE2706519 C2 DE 2706519C2
Authority
DE
Germany
Prior art keywords
solution
silicon
alkali metal
polishing agent
silicon wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2706519A
Other languages
German (de)
English (en)
Other versions
DE2706519A1 (de
Inventor
Jagtar Singh Fishkill N.Y. Basi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2706519A1 publication Critical patent/DE2706519A1/de
Application granted granted Critical
Publication of DE2706519C2 publication Critical patent/DE2706519C2/de
Expired legal-status Critical Current

Links

Classifications

    • H10P70/10—
    • H10P70/15—

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
DE2706519A 1976-03-25 1977-02-16 Verfahren zum Reinigen der Oberfläche von polierten Siliciumplättchen Expired DE2706519C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/670,508 US4050954A (en) 1976-03-25 1976-03-25 Surface treatment of semiconductor substrates

Publications (2)

Publication Number Publication Date
DE2706519A1 DE2706519A1 (de) 1977-10-06
DE2706519C2 true DE2706519C2 (de) 1985-09-26

Family

ID=24690679

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2706519A Expired DE2706519C2 (de) 1976-03-25 1977-02-16 Verfahren zum Reinigen der Oberfläche von polierten Siliciumplättchen

Country Status (7)

Country Link
US (1) US4050954A (cg-RX-API-DMAC10.html)
JP (1) JPS52117060A (cg-RX-API-DMAC10.html)
CA (1) CA1053382A (cg-RX-API-DMAC10.html)
DE (1) DE2706519C2 (cg-RX-API-DMAC10.html)
FR (1) FR2345532A1 (cg-RX-API-DMAC10.html)
GB (1) GB1525675A (cg-RX-API-DMAC10.html)
IT (1) IT1114857B (cg-RX-API-DMAC10.html)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4116714A (en) * 1977-08-15 1978-09-26 International Business Machines Corporation Post-polishing semiconductor surface cleaning process
JPS6119133A (ja) * 1984-07-05 1986-01-28 Nec Corp 半導体装置の製造方法
DE3735158A1 (de) * 1987-10-16 1989-05-03 Wacker Chemitronic Verfahren zum schleierfreien polieren von halbleiterscheiben
JPH02165641A (ja) * 1988-12-20 1990-06-26 Sanyo Electric Co Ltd 電界効果トランジスタの製造方法
US5320706A (en) * 1991-10-15 1994-06-14 Texas Instruments Incorporated Removing slurry residue from semiconductor wafer planarization
JPH0779166B2 (ja) * 1991-12-25 1995-08-23 セイコーエプソン株式会社 薄膜トランジスタの製造方法
US5607718A (en) * 1993-03-26 1997-03-04 Kabushiki Kaisha Toshiba Polishing method and polishing apparatus
KR0166404B1 (ko) * 1993-03-26 1999-02-01 사토 후미오 연마방법 및 연마장치
WO1995004372A1 (en) * 1993-07-30 1995-02-09 Semitool, Inc. Methods for processing semiconductors to reduce surface particles
US5643060A (en) * 1993-08-25 1997-07-01 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including heater
US5658183A (en) * 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5700180A (en) 1993-08-25 1997-12-23 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing
US6267122B1 (en) * 1993-09-10 2001-07-31 Texas Instruments Incorporated Semiconductor cleaning solution and method
US5885138A (en) * 1993-09-21 1999-03-23 Ebara Corporation Method and apparatus for dry-in, dry-out polishing and washing of a semiconductor device
US5679059A (en) 1994-11-29 1997-10-21 Ebara Corporation Polishing aparatus and method
JP3326642B2 (ja) * 1993-11-09 2002-09-24 ソニー株式会社 基板の研磨後処理方法およびこれに用いる研磨装置
JP2586319B2 (ja) * 1993-12-15 1997-02-26 日本電気株式会社 半導体基板の研磨方法
EP0718873A3 (en) * 1994-12-21 1998-04-15 MEMC Electronic Materials, Inc. Cleaning process for hydrophobic silicon wafers
JP3649771B2 (ja) * 1995-05-15 2005-05-18 栗田工業株式会社 洗浄方法
IL113829A (en) 1995-05-23 2000-12-06 Nova Measuring Instr Ltd Apparatus for optical inspection of wafers during polishing
US20070123151A1 (en) * 1995-05-23 2007-05-31 Nova Measuring Instruments Ltd Apparatus for optical inspection of wafers during polishing
US7169015B2 (en) * 1995-05-23 2007-01-30 Nova Measuring Instruments Ltd. Apparatus for optical inspection of wafers during processing
US5704987A (en) * 1996-01-19 1998-01-06 International Business Machines Corporation Process for removing residue from a semiconductor wafer after chemical-mechanical polishing
DE19709217A1 (de) * 1997-03-06 1998-09-10 Wacker Siltronic Halbleitermat Verfahren zur Behandlung einer polierten Halbleiterscheibe gleich nach Abschluß einer Politur der Halbleiterscheibe
US5896870A (en) * 1997-03-11 1999-04-27 International Business Machines Corporation Method of removing slurry particles
US5922136A (en) * 1997-03-28 1999-07-13 Taiwan Semiconductor Manufacturing Company, Ltd. Post-CMP cleaner apparatus and method
US6240933B1 (en) 1997-05-09 2001-06-05 Semitool, Inc. Methods for cleaning semiconductor surfaces
US6152148A (en) * 1998-09-03 2000-11-28 Honeywell, Inc. Method for cleaning semiconductor wafers containing dielectric films
US6230720B1 (en) 1999-08-16 2001-05-15 Memc Electronic Materials, Inc. Single-operation method of cleaning semiconductors after final polishing
US6375548B1 (en) * 1999-12-30 2002-04-23 Micron Technology, Inc. Chemical-mechanical polishing methods
US6416391B1 (en) * 2000-02-28 2002-07-09 Seh America, Inc. Method of demounting silicon wafers after polishing
US20030104770A1 (en) 2001-04-30 2003-06-05 Arch Specialty Chemicals, Inc. Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
US20040159050A1 (en) * 2001-04-30 2004-08-19 Arch Specialty Chemicals, Inc. Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
US20040029494A1 (en) * 2002-08-09 2004-02-12 Souvik Banerjee Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and CO2 based cryogenic cleaning techniques
US20090126760A1 (en) * 2005-01-12 2009-05-21 Boc, Inc. System for cleaning a surface using crogenic aerosol and fluid reactant
TWI324797B (en) * 2005-04-05 2010-05-11 Lam Res Corp Method for removing particles from a surface
JP4817291B2 (ja) * 2005-10-25 2011-11-16 Ｏｋｉセミコンダクタ株式会社 半導体ウェハの製造方法
US8075697B2 (en) 2007-02-08 2011-12-13 Fontana Technology Particle removal method and composition
US20080299780A1 (en) * 2007-06-01 2008-12-04 Uv Tech Systems, Inc. Method and apparatus for laser oxidation and reduction

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2690383A (en) * 1952-04-29 1954-09-28 Gen Electric Co Ltd Etching of crystal contact devices
US2930722A (en) * 1959-02-03 1960-03-29 Bell Telephone Labor Inc Method of treating silicon
US3170273A (en) * 1963-01-10 1965-02-23 Monsanto Co Process for polishing semiconductor materials
US3436259A (en) * 1966-05-12 1969-04-01 Ibm Method for plating and polishing a silicon planar surface
JPS50147287A (cg-RX-API-DMAC10.html) * 1974-05-15 1975-11-26

Also Published As

Publication number Publication date
JPS52117060A (en) 1977-10-01
CA1053382A (en) 1979-04-24
DE2706519A1 (de) 1977-10-06
FR2345532B1 (cg-RX-API-DMAC10.html) 1979-03-09
FR2345532A1 (fr) 1977-10-21
JPS542539B2 (cg-RX-API-DMAC10.html) 1979-02-08
IT1114857B (it) 1986-01-27
US4050954A (en) 1977-09-27
GB1525675A (en) 1978-09-20

Similar Documents

Publication Publication Date Title
DE2706519C2 (de) Verfahren zum Reinigen der Oberfläche von polierten Siliciumplättchen
DE69507567T2 (de) Verfahren zur Reinigung von halbleitenden Scheiben
DE112010003900T5 (de) Lösung zum Ätzen von Silizium und Ätz-Verfahren
EP0000701A2 (de) Verfahren zur Entfernung von Siliciumdioxidrückständen von einer Halbleiteroberfläche
EP0698917B1 (de) Verfahren zum Reinigen von Halbleiterscheiben
DE69909346T2 (de) Reinigungslösung für elektronische Bauteile sowie deren Verwendung
DE112010002718T5 (de) Verfahren zur reinigung eines siliciumwafers sowie verfahrenzur herstellung eines epitaktischen wafers unter verwendung des reinigungsverfahrens
DE19829863B4 (de) Verfahren zum Herstellen einer Halbleitervorrichtung
DE69624830T2 (de) Verfahren zum Trocknen von Substraten
DE19953152C1 (de) Verfahren zur naßchemischen Oberflächenbehandlung einer Halbleiterscheibe
DE10014071B4 (de) Verfahren zum Lagern eines Halbleiterwafers nach seinem CMP-Polieren
DE2531163A1 (de) Verfahren zur verbesserung der loetbarkeit elektrischer leiterplatten
DE102004062355A1 (de) Verfahren zum Behandeln einer Halbleiterscheibe mit einem gasförmigen Medium sowie damit behandelte Halbleiterscheibe
DE2951237A1 (de) Verfahren zur behandlung von halbleitersubstraten
DE10328845A1 (de) Verfahren zur nasschemischen Oberflächenbehandlung einer Halbleiterscheibe
DE2252045A1 (de) Verfahren zum polieren von galliumphosphid-oberflaechen
EP1176632B1 (de) Verfahren zur chemischen Behandlung von Halbleiterscheiben
DE10064081C2 (de) Verfahren zur Herstellung einer Halbleiterscheibe
DE69632107T2 (de) Reinigungslösung für Halbleiteranordnung und Reinigungsmethode
DE102007044787A1 (de) Verfahren zum Reinigen einer Halbleiterscheibe
DE2225366B2 (de) Verfahren zum Entfernen von Vorsprüngen an Epitaxie-Schichten
DE2239145A1 (de) Verfahren zur behandlung von halbleitermaterialien aus iii-v-verbindungen
DE69613476T2 (de) Metallspülungsverfahren mit kontrollierter Metallmikrokorrosionsreduktion
EP2031096A2 (de) Verfahren zur Reinigung von Oberflächen sowie Verwendung des Verfahrens
DE10101820A1 (de) Optisches Element und Verfahren zur Wiedergewinnung des Substrates

Legal Events

Date Code Title Description
OD Request for examination
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee