DE2704043C2 - Verfahren und Vorrichtung zum kontinuierlichen Züchten von mehrfach dotierten Einkristallen - Google Patents
Verfahren und Vorrichtung zum kontinuierlichen Züchten von mehrfach dotierten EinkristallenInfo
- Publication number
- DE2704043C2 DE2704043C2 DE19772704043 DE2704043A DE2704043C2 DE 2704043 C2 DE2704043 C2 DE 2704043C2 DE 19772704043 DE19772704043 DE 19772704043 DE 2704043 A DE2704043 A DE 2704043A DE 2704043 C2 DE2704043 C2 DE 2704043C2
- Authority
- DE
- Germany
- Prior art keywords
- crucible
- capillary
- single crystals
- starting material
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title claims description 32
- 238000000034 method Methods 0.000 title claims description 7
- 239000007858 starting material Substances 0.000 claims description 9
- 239000000155 melt Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000011651 chromium Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 7
- 239000000843 powder Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000011863 silicon-based powder Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000010979 ruby Substances 0.000 description 2
- 229910001750 ruby Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000012835 hanging drop method Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/08—Downward pulling
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7701014A FR2377224A2 (fr) | 1977-01-14 | 1977-01-14 | Procede et dispositif de fabrication de monocristaux preformes a dopage multiple |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2704043A1 DE2704043A1 (de) | 1978-07-20 |
| DE2704043C2 true DE2704043C2 (de) | 1983-09-01 |
Family
ID=9185495
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19772704043 Expired DE2704043C2 (de) | 1977-01-14 | 1977-02-01 | Verfahren und Vorrichtung zum kontinuierlichen Züchten von mehrfach dotierten Einkristallen |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS6018636B2 (en, 2012) |
| CH (1) | CH619007A5 (en, 2012) |
| DE (1) | DE2704043C2 (en, 2012) |
| FR (1) | FR2377224A2 (en, 2012) |
| GB (1) | GB1572914A (en, 2012) |
| IT (1) | IT1116306B (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19936651A1 (de) * | 1999-08-04 | 2001-02-15 | Forsch Mineralische Und Metall | Verfahren und Herstellung eines segmentierten Kristalls |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8005312A (nl) * | 1980-09-24 | 1982-04-16 | Philips Nv | Werkwijze voor het vervaardigen van ferriet eenkristallen. |
| JPS59165470U (ja) * | 1984-02-29 | 1984-11-06 | ケイディディ株式会社 | 単結晶製造装置 |
| WO1986006764A1 (en) * | 1985-05-17 | 1986-11-20 | J.C. Schumacher Company | Continuously pulled single crystal silicon ingots |
-
1977
- 1977-01-14 FR FR7701014A patent/FR2377224A2/fr active Granted
- 1977-02-01 DE DE19772704043 patent/DE2704043C2/de not_active Expired
- 1977-02-02 CH CH127777A patent/CH619007A5/fr not_active IP Right Cessation
- 1977-02-02 GB GB424277A patent/GB1572914A/en not_active Expired
- 1977-02-07 JP JP1170877A patent/JPS6018636B2/ja not_active Expired
- 1977-02-07 IT IT6727177A patent/IT1116306B/it active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19936651A1 (de) * | 1999-08-04 | 2001-02-15 | Forsch Mineralische Und Metall | Verfahren und Herstellung eines segmentierten Kristalls |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1572914A (en) | 1980-08-06 |
| DE2704043A1 (de) | 1978-07-20 |
| FR2377224A2 (fr) | 1978-08-11 |
| IT1116306B (it) | 1986-02-10 |
| FR2377224B2 (en, 2012) | 1981-06-12 |
| CH619007A5 (en) | 1980-08-29 |
| JPS6018636B2 (ja) | 1985-05-11 |
| JPS5389890A (en) | 1978-08-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OAP | Request for examination filed | ||
| OD | Request for examination | ||
| 8178 | Suspension cancelled | ||
| AF | Is addition to no. |
Ref country code: DE Ref document number: 2635373 Format of ref document f/p: P |
|
| 8127 | New person/name/address of the applicant |
Owner name: PCUK-PRODUITS CHIMIQUES UGINE KUHLMANN, 92400 COUR |
|
| AF | Is addition to no. |
Ref country code: DE Ref document number: 2635373 Format of ref document f/p: P |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8340 | Patent of addition ceased/non-payment of fee of main patent |