DE2654945C2 - Auf dem EFG-Verfahren beruhendes Verfahren zur Herstellung von im wesentlichen ebenen, insbesondere im wesentlichen einkristallinen Bändern aus kristallinem Festkörpermaterial zur Verwendung für elektronische Festkörperanordnungen, insbesondere Halbleiterbauelemente und Solarzellen - Google Patents
Auf dem EFG-Verfahren beruhendes Verfahren zur Herstellung von im wesentlichen ebenen, insbesondere im wesentlichen einkristallinen Bändern aus kristallinem Festkörpermaterial zur Verwendung für elektronische Festkörperanordnungen, insbesondere Halbleiterbauelemente und SolarzellenInfo
- Publication number
- DE2654945C2 DE2654945C2 DE2654945A DE2654945A DE2654945C2 DE 2654945 C2 DE2654945 C2 DE 2654945C2 DE 2654945 A DE2654945 A DE 2654945A DE 2654945 A DE2654945 A DE 2654945A DE 2654945 C2 DE2654945 C2 DE 2654945C2
- Authority
- DE
- Germany
- Prior art keywords
- flat
- strips
- production
- tube
- essentially
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 239000000463 material Substances 0.000 title description 20
- 239000013078 crystal Substances 0.000 claims description 17
- 239000011343 solid material Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 18
- 239000010410 layer Substances 0.000 description 15
- 238000005520 cutting process Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 238000007493 shaping process Methods 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 238000000926 separation method Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 238000000429 assembly Methods 0.000 description 5
- 230000000712 assembly Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000000155 melt Substances 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 4
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 3
- 241001233037 catfish Species 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 241001416181 Axis axis Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- 244000089486 Phragmites australis subsp australis Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- RPPBZEBXAAZZJH-UHFFFAOYSA-N cadmium telluride Chemical compound [Te]=[Cd] RPPBZEBXAAZZJH-UHFFFAOYSA-N 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 210000003041 ligament Anatomy 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000003238 silicate melt Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- IHQKEDIOMGYHEB-UHFFFAOYSA-M sodium dimethylarsinate Chemical class [Na+].C[As](C)([O-])=O IHQKEDIOMGYHEB-UHFFFAOYSA-M 0.000 description 1
- 239000006163 transport media Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
- H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/061—Gettering-armorphous layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/638,187 US4036666A (en) | 1975-12-05 | 1975-12-05 | Manufacture of semiconductor ribbon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2654945A1 DE2654945A1 (de) | 1977-06-16 |
| DE2654945C2 true DE2654945C2 (de) | 1986-04-10 |
Family
ID=24558995
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2654945A Expired DE2654945C2 (de) | 1975-12-05 | 1976-12-03 | Auf dem EFG-Verfahren beruhendes Verfahren zur Herstellung von im wesentlichen ebenen, insbesondere im wesentlichen einkristallinen Bändern aus kristallinem Festkörpermaterial zur Verwendung für elektronische Festkörperanordnungen, insbesondere Halbleiterbauelemente und Solarzellen |
Country Status (10)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3005049A1 (de) * | 1979-02-12 | 1980-08-21 | Mobil Tyco Solar Energy Corp | Verfahren zum ziehen eines kristallkoerpers aus einer schmelze, insbesondere fuer die herstellung von solarzellen, sowie kapillar-formgebungsteil hierfuer |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5423488A (en) * | 1977-07-25 | 1979-02-22 | Japan Solar Energy | Optical generator |
| JPS5430786A (en) * | 1977-08-11 | 1979-03-07 | Japan Solar Energy | Optical generator |
| JPS5460584A (en) * | 1977-10-24 | 1979-05-16 | Agency Of Ind Science & Technol | Solar battery using silicon ribbon crystal |
| US4440728A (en) * | 1981-08-03 | 1984-04-03 | Mobil Solar Energy Corporation | Apparatus for growing tubular crystalline bodies |
| SE428814B (sv) * | 1981-11-27 | 1983-07-25 | John Bjorlund | Sjelvresande stolpe |
| US4647437A (en) * | 1983-05-19 | 1987-03-03 | Mobil Solar Energy Corporation | Apparatus for and method of making crystalline bodies |
| US4711695A (en) * | 1983-05-19 | 1987-12-08 | Mobil Solar Energy Corporation | Apparatus for and method of making crystalline bodies |
| US5156978A (en) * | 1988-11-15 | 1992-10-20 | Mobil Solar Energy Corporation | Method of fabricating solar cells |
| US5106763A (en) * | 1988-11-15 | 1992-04-21 | Mobil Solar Energy Corporation | Method of fabricating solar cells |
| US5993540A (en) * | 1995-06-16 | 1999-11-30 | Optoscint, Inc. | Continuous crystal plate growth process and apparatus |
| US6800137B2 (en) | 1995-06-16 | 2004-10-05 | Phoenix Scientific Corporation | Binary and ternary crystal purification and growth method and apparatus |
| US6402840B1 (en) | 1999-08-10 | 2002-06-11 | Optoscint, Inc. | Crystal growth employing embedded purification chamber |
| US7344594B2 (en) * | 2004-06-18 | 2008-03-18 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
| US7691199B2 (en) * | 2004-06-18 | 2010-04-06 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
| US7465351B2 (en) * | 2004-06-18 | 2008-12-16 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
| US7572334B2 (en) * | 2006-01-03 | 2009-08-11 | Applied Materials, Inc. | Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application |
| CN103160915A (zh) * | 2011-12-09 | 2013-06-19 | 洛阳金诺机械工程有限公司 | 一种c形硅芯的拉制模板 |
| RU2561511C1 (ru) * | 2014-10-15 | 2015-08-27 | Федеральное государственное унитарное предприятие "Научно-исследовательский институт Научно-производственное объединение "ЛУЧ" (ФГУП "НИИ НПО "ЛУЧ") | Способ изготовления монокристаллических цилиндрических шайб из тугоплавких соединений |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE962553C (de) * | 1954-09-14 | 1957-04-25 | Licentia Gmbh | Verfahren zur Herstellung von einkristallinen Halbleiterkoerpern in Form von Hohlzylindern durch Ziehen aus der Schmelze |
| DE1025526B (de) * | 1955-07-13 | 1958-03-06 | Siemens Ag | Halbleitergrundkoerper, vorzugsweise Einkristall, zum Aufbau von Halbleiteranordnungen, beispielsweise Gleichrichtern und Transistoren, und Verfahren zu seiner Herstellung |
| US3129061A (en) * | 1961-03-27 | 1964-04-14 | Westinghouse Electric Corp | Process for producing an elongated unitary body of semiconductor material crystallizing in the diamond cubic lattice structure and the product so produced |
| US3421946A (en) * | 1964-04-20 | 1969-01-14 | Westinghouse Electric Corp | Uncompensated solar cell |
| GB1079430A (en) * | 1965-05-06 | 1967-08-16 | Maxbo Ab | A method and apparatus for heat sealing or cutting thermoplastic material |
| US3394994A (en) * | 1966-04-26 | 1968-07-30 | Westinghouse Electric Corp | Method of varying the thickness of dendrites by addition of an impurity which controls growith in the <111> direction |
| US3492167A (en) * | 1966-08-26 | 1970-01-27 | Matsushita Electric Ind Co Ltd | Photovoltaic cell and method of making the same |
| US3433677A (en) * | 1967-04-05 | 1969-03-18 | Cornell Aeronautical Labor Inc | Flexible sheet thin-film photovoltaic generator |
| US3591348A (en) * | 1968-01-24 | 1971-07-06 | Tyco Laboratories Inc | Method of growing crystalline materials |
| US3687633A (en) * | 1970-08-28 | 1972-08-29 | Tyco Laboratories Inc | Apparatus for growing crystalline bodies from the melt |
| BE789331A (fr) * | 1971-09-28 | 1973-01-15 | Communications Satellite Corp | Cellule solaire a geometrie fine |
| US3826625A (en) * | 1971-11-08 | 1974-07-30 | Tyco Laboratories Inc | Method and apparatus for growing crystalline bodies from the melt using a porous die member |
| US3853489A (en) * | 1971-11-08 | 1974-12-10 | Tyco Laboratories Inc | A non-wetting aid for growing crystalline bodies |
| US3976508A (en) * | 1974-11-01 | 1976-08-24 | Mobil Tyco Solar Energy Corporation | Tubular solar cell devices |
-
1975
- 1975-12-05 US US05/638,187 patent/US4036666A/en not_active Expired - Lifetime
-
1976
- 1976-08-16 CH CH1040176A patent/CH600108A5/xx not_active IP Right Cessation
- 1976-10-15 GB GB42956/76A patent/GB1536900A/en not_active Expired
- 1976-10-19 IL IL50724A patent/IL50724A/xx unknown
- 1976-10-21 CA CA263,882A patent/CA1064601A/en not_active Expired
- 1976-10-25 AU AU18943/76A patent/AU501653B2/en not_active Expired
- 1976-12-03 FR FR7636601A patent/FR2333569A1/fr active Granted
- 1976-12-03 DE DE2654945A patent/DE2654945C2/de not_active Expired
- 1976-12-03 NL NLAANVRAGE7613503,A patent/NL186667C/xx not_active IP Right Cessation
- 1976-12-03 JP JP51146052A patent/JPS5271170A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3005049A1 (de) * | 1979-02-12 | 1980-08-21 | Mobil Tyco Solar Energy Corp | Verfahren zum ziehen eines kristallkoerpers aus einer schmelze, insbesondere fuer die herstellung von solarzellen, sowie kapillar-formgebungsteil hierfuer |
Also Published As
| Publication number | Publication date |
|---|---|
| IL50724A (en) | 1978-07-31 |
| FR2333569B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1981-10-16 |
| GB1536900A (en) | 1978-12-29 |
| FR2333569A1 (fr) | 1977-07-01 |
| NL186667C (nl) | 1991-01-16 |
| NL7613503A (nl) | 1977-06-07 |
| NL186667B (nl) | 1990-08-16 |
| JPS5436153B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1979-11-07 |
| JPS5271170A (en) | 1977-06-14 |
| CH600108A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1978-06-15 |
| AU501653B2 (en) | 1979-06-28 |
| US4036666A (en) | 1977-07-19 |
| DE2654945A1 (de) | 1977-06-16 |
| CA1064601A (en) | 1979-10-16 |
| AU1894376A (en) | 1978-05-04 |
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