DE2650779C3 - Verfahren zum Ausheilen von Kristallgitterschäden in durch Neutroneneinstrahlung dotierten Siliciumkristallen - Google Patents

Verfahren zum Ausheilen von Kristallgitterschäden in durch Neutroneneinstrahlung dotierten Siliciumkristallen

Info

Publication number
DE2650779C3
DE2650779C3 DE2650779A DE2650779A DE2650779C3 DE 2650779 C3 DE2650779 C3 DE 2650779C3 DE 2650779 A DE2650779 A DE 2650779A DE 2650779 A DE2650779 A DE 2650779A DE 2650779 C3 DE2650779 C3 DE 2650779C3
Authority
DE
Germany
Prior art keywords
silicon
carbon content
atoms
temperature
tempering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2650779A
Other languages
German (de)
English (en)
Other versions
DE2650779A1 (de
DE2650779B2 (https=
Inventor
Peter Dr. 8000 Muenchen Voss
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE2650779A priority Critical patent/DE2650779C3/de
Priority to IT29091/77A priority patent/IT1088146B/it
Priority to JP13215477A priority patent/JPS5357968A/ja
Priority to DK491577A priority patent/DK491577A/da
Publication of DE2650779A1 publication Critical patent/DE2650779A1/de
Publication of DE2650779B2 publication Critical patent/DE2650779B2/de
Application granted granted Critical
Publication of DE2650779C3 publication Critical patent/DE2650779C3/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/20—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices for inducing a nuclear reaction transmuting chemical elements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE2650779A 1976-11-05 1976-11-05 Verfahren zum Ausheilen von Kristallgitterschäden in durch Neutroneneinstrahlung dotierten Siliciumkristallen Expired DE2650779C3 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE2650779A DE2650779C3 (de) 1976-11-05 1976-11-05 Verfahren zum Ausheilen von Kristallgitterschäden in durch Neutroneneinstrahlung dotierten Siliciumkristallen
IT29091/77A IT1088146B (it) 1976-11-05 1977-10-28 Procedimento per riparare lesioni del reticolo cristallino in cristalli di silicio drogato con l'isotopo del fosforo 31 p mediante irradiazione neutronica
JP13215477A JPS5357968A (en) 1976-11-05 1977-11-02 Method of recovering defects of silicon crystal irradiated by neutron
DK491577A DK491577A (da) 1976-11-05 1977-11-04 Fremgangsmaade til udbedring af krystalgitterskader i siliciumkrystaller der ved neutronbestraaling er doteret med phosphorisotopen 31p

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2650779A DE2650779C3 (de) 1976-11-05 1976-11-05 Verfahren zum Ausheilen von Kristallgitterschäden in durch Neutroneneinstrahlung dotierten Siliciumkristallen

Publications (3)

Publication Number Publication Date
DE2650779A1 DE2650779A1 (de) 1978-05-11
DE2650779B2 DE2650779B2 (https=) 1979-01-11
DE2650779C3 true DE2650779C3 (de) 1979-09-13

Family

ID=5992547

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2650779A Expired DE2650779C3 (de) 1976-11-05 1976-11-05 Verfahren zum Ausheilen von Kristallgitterschäden in durch Neutroneneinstrahlung dotierten Siliciumkristallen

Country Status (4)

Country Link
JP (1) JPS5357968A (https=)
DE (1) DE2650779C3 (https=)
DK (1) DK491577A (https=)
IT (1) IT1088146B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04132693A (ja) * 1990-09-21 1992-05-06 Shin Etsu Handotai Co Ltd 中性子照射シリコン単結晶の熱処理方法

Also Published As

Publication number Publication date
IT1088146B (it) 1985-06-10
DE2650779A1 (de) 1978-05-11
DE2650779B2 (https=) 1979-01-11
DK491577A (da) 1978-05-06
JPS6116760B2 (https=) 1986-05-01
JPS5357968A (en) 1978-05-25

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Legal Events

Date Code Title Description
OAP Request for examination filed
OD Request for examination
C3 Grant after two publication steps (3rd publication)
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee