JPS6116760B2 - - Google Patents

Info

Publication number
JPS6116760B2
JPS6116760B2 JP52132154A JP13215477A JPS6116760B2 JP S6116760 B2 JPS6116760 B2 JP S6116760B2 JP 52132154 A JP52132154 A JP 52132154A JP 13215477 A JP13215477 A JP 13215477A JP S6116760 B2 JPS6116760 B2 JP S6116760B2
Authority
JP
Japan
Prior art keywords
silicon
temperature
ratio
neutrons
irradiated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52132154A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5357968A (en
Inventor
Fuosu Peetaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS5357968A publication Critical patent/JPS5357968A/ja
Publication of JPS6116760B2 publication Critical patent/JPS6116760B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/20—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices for inducing a nuclear reaction transmuting chemical elements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP13215477A 1976-11-05 1977-11-02 Method of recovering defects of silicon crystal irradiated by neutron Granted JPS5357968A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2650779A DE2650779C3 (de) 1976-11-05 1976-11-05 Verfahren zum Ausheilen von Kristallgitterschäden in durch Neutroneneinstrahlung dotierten Siliciumkristallen

Publications (2)

Publication Number Publication Date
JPS5357968A JPS5357968A (en) 1978-05-25
JPS6116760B2 true JPS6116760B2 (https=) 1986-05-01

Family

ID=5992547

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13215477A Granted JPS5357968A (en) 1976-11-05 1977-11-02 Method of recovering defects of silicon crystal irradiated by neutron

Country Status (4)

Country Link
JP (1) JPS5357968A (https=)
DE (1) DE2650779C3 (https=)
DK (1) DK491577A (https=)
IT (1) IT1088146B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04132693A (ja) * 1990-09-21 1992-05-06 Shin Etsu Handotai Co Ltd 中性子照射シリコン単結晶の熱処理方法

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
DIRECTORY OF NUCLEAR REACTOR= *
IEEE TRANSACTIONS ON ELECTRON DEVICES=1976 *
JOURNAL OF ELECTRONIC MATERIALS=1976 *
JOURNAL OF THE ELECTROCHEMICAL SOCIETY=1961 *
NUCLEONICS=1964 *
RISO NATIONAL LABORATORY=1976 *
STUDSVIK=1979 *

Also Published As

Publication number Publication date
IT1088146B (it) 1985-06-10
DE2650779C3 (de) 1979-09-13
DE2650779A1 (de) 1978-05-11
DE2650779B2 (https=) 1979-01-11
DK491577A (da) 1978-05-06
JPS5357968A (en) 1978-05-25

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