JPS5357968A - Method of recovering defects of silicon crystal irradiated by neutron - Google Patents

Method of recovering defects of silicon crystal irradiated by neutron

Info

Publication number
JPS5357968A
JPS5357968A JP13215477A JP13215477A JPS5357968A JP S5357968 A JPS5357968 A JP S5357968A JP 13215477 A JP13215477 A JP 13215477A JP 13215477 A JP13215477 A JP 13215477A JP S5357968 A JPS5357968 A JP S5357968A
Authority
JP
Japan
Prior art keywords
neutron
silicon crystal
crystal irradiated
recovering defects
recovering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13215477A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6116760B2 (https=
Inventor
Fuosu Peetaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS5357968A publication Critical patent/JPS5357968A/ja
Publication of JPS6116760B2 publication Critical patent/JPS6116760B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/20—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices for inducing a nuclear reaction transmuting chemical elements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP13215477A 1976-11-05 1977-11-02 Method of recovering defects of silicon crystal irradiated by neutron Granted JPS5357968A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2650779A DE2650779C3 (de) 1976-11-05 1976-11-05 Verfahren zum Ausheilen von Kristallgitterschäden in durch Neutroneneinstrahlung dotierten Siliciumkristallen

Publications (2)

Publication Number Publication Date
JPS5357968A true JPS5357968A (en) 1978-05-25
JPS6116760B2 JPS6116760B2 (https=) 1986-05-01

Family

ID=5992547

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13215477A Granted JPS5357968A (en) 1976-11-05 1977-11-02 Method of recovering defects of silicon crystal irradiated by neutron

Country Status (4)

Country Link
JP (1) JPS5357968A (https=)
DE (1) DE2650779C3 (https=)
DK (1) DK491577A (https=)
IT (1) IT1088146B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04132693A (ja) * 1990-09-21 1992-05-06 Shin Etsu Handotai Co Ltd 中性子照射シリコン単結晶の熱処理方法

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
DIRECTORY OF NUCLEAR REACTOR= *
IEEE TRANSACTIONS ON ELECTRON DEVICES=1976 *
JOURNAL OF ELECTRONIC MATERIALS=1976 *
JOURNAL OF THE ELECTROCHEMICAL SOCIETY=1961 *
NUCLEONICS=1964 *
RISO NATIONAL LABORATORY=1976 *
STUDSVIK=1979 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04132693A (ja) * 1990-09-21 1992-05-06 Shin Etsu Handotai Co Ltd 中性子照射シリコン単結晶の熱処理方法

Also Published As

Publication number Publication date
IT1088146B (it) 1985-06-10
DE2650779C3 (de) 1979-09-13
DE2650779A1 (de) 1978-05-11
DE2650779B2 (https=) 1979-01-11
DK491577A (da) 1978-05-06
JPS6116760B2 (https=) 1986-05-01

Similar Documents

Publication Publication Date Title
JPS52139010A (en) Method of obtaining xylytol crystal
JPS541800A (en) Method of preventing contamination by radioactive process water
JPS53122684A (en) Method of forming silicon crystal
JPS534197A (en) Method of ixchanging hydrogen isotope
JPS51144252A (en) Method of producing liquid crystal device
JPS5319922A (en) Producing method of crystalline silicon
JPS52104699A (en) Method of removing radioactive methyl iodide
JPS5477063A (en) Method of reducing damage of crystal when producing nndoping silicon by neutron irradiation
JPS52126000A (en) Method of purifying radioactive flowwout liquid
JPS5310482A (en) Method of and apparatus for detecting impurities within crystal
JPS53139097A (en) Method of recovering nuclear fuel substance
JPS5357968A (en) Method of recovering defects of silicon crystal irradiated by neutron
JPS51142982A (en) Method of producing single crystal silicon ic
JPS5218343A (en) Method of making spectacle frame
HK59780A (en) Method of,and apparatus for,producing watch glasses
JPS5343031A (en) Method of recovering selenium from urethane solution containing selenium
JPS53703A (en) Method of make transparent original for photooengraving
JPS5265719A (en) Producing method of silicon single crystals
JPS53178A (en) Method of detecting leak point by using laser rays
JPS5370674A (en) Method of producing photomask
JPS53148388A (en) Method of producing compound semiconductor crystal
JPS5365851A (en) Method for production of cyclohexanone
JPS5360900A (en) Method of obtainig pure large crystal ammoniumsulfate
JPS51124376A (en) Method of making silicon single crystal doped with activation of neutron
JPS5314554A (en) Method of chamfering single crystal wafer