IT1088146B - Procedimento per riparare lesioni del reticolo cristallino in cristalli di silicio drogato con l'isotopo del fosforo 31 p mediante irradiazione neutronica - Google Patents

Procedimento per riparare lesioni del reticolo cristallino in cristalli di silicio drogato con l'isotopo del fosforo 31 p mediante irradiazione neutronica

Info

Publication number
IT1088146B
IT1088146B IT29091/77A IT2909177A IT1088146B IT 1088146 B IT1088146 B IT 1088146B IT 29091/77 A IT29091/77 A IT 29091/77A IT 2909177 A IT2909177 A IT 2909177A IT 1088146 B IT1088146 B IT 1088146B
Authority
IT
Italy
Prior art keywords
drogated
reticle
crystalline
procedure
silicon crystals
Prior art date
Application number
IT29091/77A
Other languages
English (en)
Italian (it)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1088146B publication Critical patent/IT1088146B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/20—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices for inducing a nuclear reaction transmuting chemical elements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IT29091/77A 1976-11-05 1977-10-28 Procedimento per riparare lesioni del reticolo cristallino in cristalli di silicio drogato con l'isotopo del fosforo 31 p mediante irradiazione neutronica IT1088146B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2650779A DE2650779C3 (de) 1976-11-05 1976-11-05 Verfahren zum Ausheilen von Kristallgitterschäden in durch Neutroneneinstrahlung dotierten Siliciumkristallen

Publications (1)

Publication Number Publication Date
IT1088146B true IT1088146B (it) 1985-06-10

Family

ID=5992547

Family Applications (1)

Application Number Title Priority Date Filing Date
IT29091/77A IT1088146B (it) 1976-11-05 1977-10-28 Procedimento per riparare lesioni del reticolo cristallino in cristalli di silicio drogato con l'isotopo del fosforo 31 p mediante irradiazione neutronica

Country Status (4)

Country Link
JP (1) JPS5357968A (https=)
DE (1) DE2650779C3 (https=)
DK (1) DK491577A (https=)
IT (1) IT1088146B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04132693A (ja) * 1990-09-21 1992-05-06 Shin Etsu Handotai Co Ltd 中性子照射シリコン単結晶の熱処理方法

Also Published As

Publication number Publication date
DE2650779C3 (de) 1979-09-13
DE2650779A1 (de) 1978-05-11
DE2650779B2 (https=) 1979-01-11
DK491577A (da) 1978-05-06
JPS6116760B2 (https=) 1986-05-01
JPS5357968A (en) 1978-05-25

Similar Documents

Publication Publication Date Title
DK147963C (da) Bestraalingsapparat med mindst en kilde for ultraviolet straaling
SE7705662L (sv) Anordning for uppmetning av stralningsabsorbtionen i en skiva av en kropp
AT371241B (de) Vorrichtung zur nutzung der solarenergie
MX146303A (es) Mejoras en procedimiento para la preparacion de poliisocianatos de estructura isocianurato
SE7707042L (sv) Anordning for metning av rymdfordelningen av absorberad stralning i en skiva av en kropp
BE882456A (fr) Generateur d'isotopes radio-actifs
BR7707379A (pt) Po zeolitico cristalino do tipo a e processo para a preparacao do mesmo
ES495072A0 (es) Perfeccionamientos en los aparatos suministradores de ele- mentos de fijacion
SE415003B (sv) Chuck med fyra backar for fasthallning av arbetsstycken
IT1064581B (it) Disposizione di fissaggio per la zona del nocciolo nucleare
BR7707167A (pt) Po zeolitico cristalino do tipo a e processo para a preparacao do mesmo
BR7707428A (pt) Po zeolitico cristalino do tipo a e processo para a preparacao do mesmo
BR7707281A (pt) Po zeolitico cristalino do tipo a e processo para preparacao do mesmo
IT1090159B (it) Perfezionamento nei reattori nucleari
IT1090865B (it) Procedimento per l'eliminazione di residui radioattivi organici
IT1130534B (it) Griglia per gruppi combustibili nucleari
IT1088146B (it) Procedimento per riparare lesioni del reticolo cristallino in cristalli di silicio drogato con l'isotopo del fosforo 31 p mediante irradiazione neutronica
BR7707456A (pt) Po zeolitico cristalino do tipo a e processo para a preparacao do mesmo
ES494722A0 (es) Perfeccionamientos en los aparatos para la fabricacion de cierres de cremallera
IT1063589B (it) Pannello calorifugo stagno in particolare per reattori nucleari
SE7606377L (sv) Forfarande for inneslutning av sekvestreringsmedel i fiberstrukturer
IT1078255B (it) Metodo perfezionato per la produzione per radiazione di combustibili
IT7969384A0 (it) Procedimento ed apparecchio per laproduzione di cristalli di silicio mediante accrescimento
SE8004214L (sv) Skyddsanordning for en vexelriktare i en frekvensomformare med mellankrets
IT1093469B (it) Procedimento per la produzione di almeno in circuito analogico intergrato con almeno un circuito i alla seconda/l