DK491577A - Fremgangsmaade til udbedring af krystalgitterskader i siliciumkrystaller der ved neutronbestraaling er doteret med phosphorisotopen 31p - Google Patents

Fremgangsmaade til udbedring af krystalgitterskader i siliciumkrystaller der ved neutronbestraaling er doteret med phosphorisotopen 31p

Info

Publication number
DK491577A
DK491577A DK491577A DK491577A DK491577A DK 491577 A DK491577 A DK 491577A DK 491577 A DK491577 A DK 491577A DK 491577 A DK491577 A DK 491577A DK 491577 A DK491577 A DK 491577A
Authority
DK
Denmark
Prior art keywords
phosphorisotope
decreated
irradation
neutron
repair
Prior art date
Application number
DK491577A
Other languages
Danish (da)
English (en)
Inventor
P Voss
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of DK491577A publication Critical patent/DK491577A/da

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20Doping by irradiation with electromagnetic waves or by particle radiation
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/20Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices for inducing a nuclear reaction transmuting chemical elements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DK491577A 1976-11-05 1977-11-04 Fremgangsmaade til udbedring af krystalgitterskader i siliciumkrystaller der ved neutronbestraaling er doteret med phosphorisotopen 31p DK491577A (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2650779A DE2650779C3 (de) 1976-11-05 1976-11-05 Verfahren zum Ausheilen von Kristallgitterschäden in durch Neutroneneinstrahlung dotierten Siliciumkristallen

Publications (1)

Publication Number Publication Date
DK491577A true DK491577A (da) 1978-05-06

Family

ID=5992547

Family Applications (1)

Application Number Title Priority Date Filing Date
DK491577A DK491577A (da) 1976-11-05 1977-11-04 Fremgangsmaade til udbedring af krystalgitterskader i siliciumkrystaller der ved neutronbestraaling er doteret med phosphorisotopen 31p

Country Status (4)

Country Link
JP (1) JPS5357968A (https=)
DE (1) DE2650779C3 (https=)
DK (1) DK491577A (https=)
IT (1) IT1088146B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04132693A (ja) * 1990-09-21 1992-05-06 Shin Etsu Handotai Co Ltd 中性子照射シリコン単結晶の熱処理方法

Also Published As

Publication number Publication date
IT1088146B (it) 1985-06-10
DE2650779C3 (de) 1979-09-13
DE2650779A1 (de) 1978-05-11
DE2650779B2 (https=) 1979-01-11
JPS6116760B2 (https=) 1986-05-01
JPS5357968A (en) 1978-05-25

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