DE2645081C2 - Verfahren zum Herstellen einer Dünnfilmstruktur - Google Patents
Verfahren zum Herstellen einer DünnfilmstrukturInfo
- Publication number
- DE2645081C2 DE2645081C2 DE19762645081 DE2645081A DE2645081C2 DE 2645081 C2 DE2645081 C2 DE 2645081C2 DE 19762645081 DE19762645081 DE 19762645081 DE 2645081 A DE2645081 A DE 2645081A DE 2645081 C2 DE2645081 C2 DE 2645081C2
- Authority
- DE
- Germany
- Prior art keywords
- photoresist
- layer
- mask
- overhang
- openings
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000010409 thin film Substances 0.000 title claims description 5
- 239000000463 material Substances 0.000 claims description 46
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 64
- 238000000034 method Methods 0.000 description 46
- 229910052751 metal Inorganic materials 0.000 description 24
- 239000002184 metal Substances 0.000 description 23
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 14
- 238000001465 metallisation Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 12
- 239000011159 matrix material Substances 0.000 description 10
- 239000011651 chromium Substances 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 8
- 239000004926 polymethyl methacrylate Substances 0.000 description 8
- 229910003271 Ni-Fe Inorganic materials 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 5
- 238000000992 sputter etching Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910004072 SiFe Inorganic materials 0.000 description 3
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000002966 varnish Substances 0.000 description 2
- 239000004160 Ammonium persulphate Substances 0.000 description 1
- -1 B. Fe Substances 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- PQUCIEFHOVEZAU-UHFFFAOYSA-N Diammonium sulfite Chemical compound [NH4+].[NH4+].[O-]S([O-])=O PQUCIEFHOVEZAU-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 235000019395 ammonium persulphate Nutrition 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000011104 metalized film Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001195 polyisoprene Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 230000003716 rejuvenation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
- H05K3/143—Masks therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
- Magnetic Heads (AREA)
- Electrodes Of Semiconductors (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US64585275A | 1975-12-31 | 1975-12-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2645081A1 DE2645081A1 (de) | 1977-07-14 |
| DE2645081C2 true DE2645081C2 (de) | 1985-10-03 |
Family
ID=24590741
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19762645081 Expired DE2645081C2 (de) | 1975-12-31 | 1976-10-06 | Verfahren zum Herstellen einer Dünnfilmstruktur |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS5857908B2 (enExample) |
| DE (1) | DE2645081C2 (enExample) |
| FR (1) | FR2337358A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58102146A (ja) * | 1981-12-14 | 1983-06-17 | Fuji Photo Film Co Ltd | 銀／ハロゲン化銀電極の製造方法 |
| DE3715431A1 (de) * | 1987-05-08 | 1988-11-17 | Siemens Ag | Verfahren zur herstellung eines strukturierten metallkontaktes auf einer halbleiterscheibe |
| JPH0666290B2 (ja) * | 1987-12-29 | 1994-08-24 | 日本電気株式会社 | 半導体装置の製造方法 |
| US7749883B2 (en) | 2007-09-20 | 2010-07-06 | Fry's Metals, Inc. | Electroformed stencils for solar cell front side metallization |
-
1976
- 1976-10-06 DE DE19762645081 patent/DE2645081C2/de not_active Expired
- 1976-11-29 FR FR7636405A patent/FR2337358A1/fr active Granted
- 1976-12-10 JP JP14790576A patent/JPS5857908B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2337358A1 (fr) | 1977-07-29 |
| JPS5285033A (en) | 1977-07-15 |
| JPS5857908B2 (ja) | 1983-12-22 |
| DE2645081A1 (de) | 1977-07-14 |
| FR2337358B1 (enExample) | 1982-01-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8125 | Change of the main classification |
Ipc: C23C 13/06 |
|
| 8128 | New person/name/address of the agent |
Representative=s name: BOEHMER, H., DIPL.-ING., PAT.-ANW., 7031 AIDLINGEN |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |