DE2642554C3 - Verfahren zur Herstellung von a- Siliziumnitrid - Google Patents
Verfahren zur Herstellung von a- SiliziumnitridInfo
- Publication number
- DE2642554C3 DE2642554C3 DE2642554A DE2642554A DE2642554C3 DE 2642554 C3 DE2642554 C3 DE 2642554C3 DE 2642554 A DE2642554 A DE 2642554A DE 2642554 A DE2642554 A DE 2642554A DE 2642554 C3 DE2642554 C3 DE 2642554C3
- Authority
- DE
- Germany
- Prior art keywords
- powder
- silicon
- weight
- carbon
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 29
- 229910052581 Si3N4 Inorganic materials 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 38
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 25
- 239000000843 powder Substances 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052799 carbon Inorganic materials 0.000 claims description 21
- 238000006243 chemical reaction Methods 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims description 13
- 230000001590 oxidative effect Effects 0.000 claims description 11
- 239000011863 silicon-based powder Substances 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 2
- 238000005121 nitriding Methods 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 238000005261 decarburization Methods 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 14
- 239000000463 material Substances 0.000 description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 11
- 239000012535 impurity Substances 0.000 description 10
- 238000006396 nitration reaction Methods 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 238000002156 mixing Methods 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000006722 reduction reaction Methods 0.000 description 5
- 239000012808 vapor phase Substances 0.000 description 5
- 239000007858 starting material Substances 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910013627 M-Si Inorganic materials 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000011819 refractory material Substances 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- 229910003849 O-Si Inorganic materials 0.000 description 1
- 229910003872 O—Si Inorganic materials 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011449 brick Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
- C01B21/0685—Preparation by carboreductive nitridation
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Ceramic Products (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50113762A JPS5238500A (en) | 1975-09-22 | 1975-09-22 | Production of alpha-silicon nitride powder |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2642554A1 DE2642554A1 (de) | 1977-04-07 |
| DE2642554B2 DE2642554B2 (de) | 1978-09-14 |
| DE2642554C3 true DE2642554C3 (de) | 1979-05-03 |
Family
ID=14620488
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2642554A Expired DE2642554C3 (de) | 1975-09-22 | 1976-09-22 | Verfahren zur Herstellung von a- Siliziumnitrid |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4117095A (OSRAM) |
| JP (1) | JPS5238500A (OSRAM) |
| DE (1) | DE2642554C3 (OSRAM) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4218257A (en) * | 1975-04-07 | 1980-08-19 | Ngk Insulators, Ltd. | Sintered silicon nitride body and a method of producing the same |
| JPS5290499A (en) * | 1976-01-27 | 1977-07-29 | Toshiba Ceramics Co | Process for preparing siliconnitride having high alphaaphase content |
| JPS5443899A (en) * | 1977-09-16 | 1979-04-06 | Chisso Corp | Preparation of silicon nitride |
| JPS5953234B2 (ja) * | 1978-05-08 | 1984-12-24 | 日本特殊陶業株式会社 | 高強度窒化けい素焼結体の製造法 |
| JPS5515964A (en) * | 1978-07-21 | 1980-02-04 | Tokyo Shibaura Electric Co | Producing silicon nitride sintered body |
| JPS5527844A (en) * | 1978-08-16 | 1980-02-28 | Tokyo Shibaura Electric Co | Manufacture of silicon nitride sintered article |
| US4376652A (en) * | 1979-01-08 | 1983-03-15 | Gte Products Corporation | High density high strength Si3 N4 ceramics prepared by pressureless sintering of amorphous Si3 N4 powder and Ti |
| JPS55113603A (en) * | 1979-02-19 | 1980-09-02 | Toshiba Corp | Manufacture of alpha silicon nitride powder |
| JPS5673603A (en) * | 1979-11-14 | 1981-06-18 | Toshiba Corp | Manufacture of silicon nitride |
| JPS5673604A (en) * | 1979-11-22 | 1981-06-18 | Toshiba Corp | Manufacture of silicon nitride |
| US4396587A (en) * | 1980-08-29 | 1983-08-02 | Asahi-Dow Limited | Method for manufacture of silicon nitride |
| US4388255A (en) * | 1981-03-27 | 1983-06-14 | Boeing Aerospace Co. (A Division Of The Boeing Company) | Method for producing pre-shaped α-silicon nitride whisker compacts and loose whiskers for composite material reinforcement |
| JPS5891005A (ja) * | 1981-11-25 | 1983-05-30 | Toshiba Corp | 窒化ケイ素粉末の製造方法 |
| SE449221B (sv) * | 1983-04-19 | 1987-04-13 | Kemanord Ind Ab | Forfarande for framstellning av kiselnitrid genom omsettning av kiseldioxid, kol och kveve vid en temperatur over 1300?59oc |
| US4487840A (en) * | 1983-06-21 | 1984-12-11 | Cornell Research Foundation, Inc. | Use of silicon in liquid sintered silicon nitrides and sialons |
| US4552711A (en) * | 1983-06-21 | 1985-11-12 | Cornell Research Foundation, Inc. | Use of free silicon in liquid phase sintering of silicon nitrides and sialons |
| US4582696A (en) * | 1985-04-15 | 1986-04-15 | Ford Motor Company | Method of making a special purity silicon nitride powder |
| US4604273A (en) * | 1985-04-19 | 1986-08-05 | Gte Products Corporation | Process for the growth of alpha silicon nitride whiskers |
| US4701316A (en) * | 1986-08-29 | 1987-10-20 | Allied Corporation | Preparation of silicon nitride powder |
| US5538675A (en) * | 1994-04-14 | 1996-07-23 | The Dow Chemical Company | Method for producing silicon nitride/silicon carbide composite |
| US5935705A (en) * | 1997-10-15 | 1999-08-10 | National Science Council Of Republic Of China | Crystalline Six Cy Nz with a direct optical band gap of 3.8 eV |
| RU2556931C1 (ru) * | 2014-02-11 | 2015-07-20 | Федеральное государственное бюджетное учреждение науки Институт структурной макрокинетики и проблем материаловедения Российской академии наук | Способ получения композиционных порошков на основе альфа-фазы нитрида кремния методом свс |
| KR102704177B1 (ko) * | 2021-03-19 | 2024-09-06 | 주식회사 아모텍 | 기판 제조용 질화규소 분말 제조방법 및 이를 통해 제조된 질화규소 분말 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1104384A (en) * | 1904-12-30 | 1914-07-21 | George Westinghouse | Process of producing silicon monoxid. |
| US1054901A (en) * | 1909-11-23 | 1913-03-04 | Basf Ag | Compounds containing silicon and nitrogen and process of producing such compounds. |
| GB1121293A (en) * | 1963-10-28 | 1968-07-24 | Mini Of Technology | Improvements in the manufacture of silicon nitride |
| US3244480A (en) * | 1964-03-03 | 1966-04-05 | Robert C Johnson | Synthesis of fibrous silicon nitride |
| US3728436A (en) * | 1970-11-09 | 1973-04-17 | V Kokin | Method of obtaining silicon monoxide |
| US3855395A (en) * | 1972-09-06 | 1974-12-17 | Univ Utah | Production of silicon nitride from rice hulls |
| US3959446A (en) * | 1974-03-01 | 1976-05-25 | The United States Of America As Represented By The Secretary Of The Air Force | Synthesis of high purity, alpha phase silicon nitride powder |
-
1975
- 1975-09-22 JP JP50113762A patent/JPS5238500A/ja active Granted
-
1976
- 1976-09-22 US US05/725,669 patent/US4117095A/en not_active Expired - Lifetime
- 1976-09-22 DE DE2642554A patent/DE2642554C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5413240B2 (OSRAM) | 1979-05-29 |
| DE2642554A1 (de) | 1977-04-07 |
| DE2642554B2 (de) | 1978-09-14 |
| US4117095A (en) | 1978-09-26 |
| JPS5238500A (en) | 1977-03-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP |
|
| 8339 | Ceased/non-payment of the annual fee |