DE2621654C3 - Speicheranordnung mit Feldeffekt- Transistoren - Google Patents
Speicheranordnung mit Feldeffekt- TransistorenInfo
- Publication number
- DE2621654C3 DE2621654C3 DE2621654A DE2621654A DE2621654C3 DE 2621654 C3 DE2621654 C3 DE 2621654C3 DE 2621654 A DE2621654 A DE 2621654A DE 2621654 A DE2621654 A DE 2621654A DE 2621654 C3 DE2621654 C3 DE 2621654C3
- Authority
- DE
- Germany
- Prior art keywords
- memory
- transistors
- bit line
- field effect
- load
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/592,148 US3969708A (en) | 1975-06-30 | 1975-06-30 | Static four device memory cell |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2621654A1 DE2621654A1 (de) | 1977-01-20 |
| DE2621654B2 DE2621654B2 (de) | 1981-06-19 |
| DE2621654C3 true DE2621654C3 (de) | 1982-02-18 |
Family
ID=24369497
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2621654A Expired DE2621654C3 (de) | 1975-06-30 | 1976-05-15 | Speicheranordnung mit Feldeffekt- Transistoren |
Country Status (5)
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4096584A (en) * | 1977-01-31 | 1978-06-20 | Intel Corporation | Low power/high speed static ram |
| US4151603A (en) * | 1977-10-31 | 1979-04-24 | International Business Machines Corporation | Precharged FET ROS array |
| JPS54109729A (en) * | 1978-02-16 | 1979-08-28 | Nec Corp | Memory circuit |
| US4207615A (en) * | 1978-11-17 | 1980-06-10 | Intel Corporation | Non-volatile ram cell |
| JPS5570993A (en) * | 1978-11-24 | 1980-05-28 | Hitachi Ltd | Memory circuit |
| US4208728A (en) * | 1978-12-21 | 1980-06-17 | Bell Telephone Laboratories, Incorporated | Programable logic array |
| EP0032608A1 (en) * | 1980-01-22 | 1981-07-29 | Mostek Corporation | Column line powered static ram cell |
| US4355377A (en) * | 1980-06-30 | 1982-10-19 | Inmos Corporation | Asynchronously equillibrated and pre-charged static ram |
| US4455625A (en) * | 1981-02-24 | 1984-06-19 | International Business Machines Corporation | Random access memory cell |
| US4414547A (en) * | 1981-08-05 | 1983-11-08 | General Instrument Corporation | Storage logic array having two conductor data column |
| JPH03116488A (ja) * | 1989-09-29 | 1991-05-17 | Fujitsu Ltd | 半導体記憶装置 |
| KR100299993B1 (ko) * | 1992-09-28 | 2001-11-22 | 윌리엄 비. 켐플러 | 게이트 어레이 장치용 정적 랜덤 액세스 메모리 |
| US5572460A (en) * | 1993-10-26 | 1996-11-05 | Integrated Device Technology, Inc. | Static random-access memory cell with capacitive coupling to reduce sensitivity to radiation |
| US6040991A (en) * | 1999-01-04 | 2000-03-21 | International Business Machines Corporation | SRAM memory cell having reduced surface area |
| US6144073A (en) * | 1999-05-13 | 2000-11-07 | Lucent Technologies Inc. | Monolithically-integrated static random access memory device |
| US6370052B1 (en) | 2000-07-19 | 2002-04-09 | Monolithic System Technology, Inc. | Method and structure of ternary CAM cell in logic process |
| US6614124B1 (en) | 2000-11-28 | 2003-09-02 | International Business Machines Corporation | Simple 4T static ram cell for low power CMOS applications |
| CN109559767B (zh) * | 2018-11-28 | 2021-11-16 | 安徽大学 | 采用两个灵敏放大器技术抵抗位线泄漏电流的电路结构 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3540007A (en) * | 1967-10-19 | 1970-11-10 | Bell Telephone Labor Inc | Field effect transistor memory cell |
| US3530443A (en) * | 1968-11-27 | 1970-09-22 | Fairchild Camera Instr Co | Mos gated resistor memory cell |
| BE755189A (fr) * | 1969-08-25 | 1971-02-24 | Shell Int Research | Agencement de memoire a courant continu |
| US3688280A (en) * | 1970-09-22 | 1972-08-29 | Ibm | Monolithic memory system with bi-level powering for reduced power consumption |
| DE2309616C2 (de) * | 1973-02-27 | 1982-11-11 | Ibm Deutschland Gmbh, 7000 Stuttgart | Halbleiterspeicherschaltung |
-
1975
- 1975-06-30 US US05/592,148 patent/US3969708A/en not_active Expired - Lifetime
-
1976
- 1976-05-13 FR FR7615014A patent/FR2316696A1/fr active Granted
- 1976-05-15 DE DE2621654A patent/DE2621654C3/de not_active Expired
- 1976-05-24 GB GB21370/76A patent/GB1535859A/en not_active Expired
- 1976-06-23 JP JP51073379A patent/JPS526037A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2621654B2 (de) | 1981-06-19 |
| FR2316696A1 (fr) | 1977-01-28 |
| GB1535859A (en) | 1978-12-13 |
| DE2621654A1 (de) | 1977-01-20 |
| JPS526037A (en) | 1977-01-18 |
| FR2316696B1 (US07223432-20070529-C00017.png) | 1978-11-17 |
| US3969708A (en) | 1976-07-13 |
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| DE2702830C2 (US07223432-20070529-C00017.png) | ||
| DE4120248C2 (de) | Statische Schreib-/Lesespeichervorrichtung, Dual-Port Schreib-/Lesespeichervorrichtung und Gate-Array-Vorrichtung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |