DE2616925C2 - Halbleiterbauelement und Verfahren zu seiner Herstellung - Google Patents
Halbleiterbauelement und Verfahren zu seiner HerstellungInfo
- Publication number
- DE2616925C2 DE2616925C2 DE2616925A DE2616925A DE2616925C2 DE 2616925 C2 DE2616925 C2 DE 2616925C2 DE 2616925 A DE2616925 A DE 2616925A DE 2616925 A DE2616925 A DE 2616925A DE 2616925 C2 DE2616925 C2 DE 2616925C2
- Authority
- DE
- Germany
- Prior art keywords
- zone
- doped
- base zone
- groove
- highly doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 56
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 title description 12
- 239000011521 glass Substances 0.000 claims description 16
- 230000007704 transition Effects 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000001154 acute effect Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- -1 B. germanium or GaAs Chemical compound 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004028 SiCU Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000002801 charged material Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/40—Vertical BJTs
- H10D10/441—Vertical BJTs having an emitter-base junction ending at a main surface of the body and a base-collector junction ending at a lateral surface of the body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NLAANVRAGE7504990,A NL185484C (nl) | 1975-04-28 | 1975-04-28 | Halfgeleiderinrichting met een halfgeleiderlichaam bevattende tenminste een transistor. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2616925A1 DE2616925A1 (de) | 1976-11-11 |
| DE2616925C2 true DE2616925C2 (de) | 1983-04-14 |
Family
ID=19823659
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2616925A Expired DE2616925C2 (de) | 1975-04-28 | 1976-04-15 | Halbleiterbauelement und Verfahren zu seiner Herstellung |
Country Status (11)
| Country | Link |
|---|---|
| JP (1) | JPS51139782A (enExample) |
| AU (1) | AU497831B2 (enExample) |
| BE (1) | BE841135A (enExample) |
| CA (1) | CA1057412A (enExample) |
| CH (1) | CH600572A5 (enExample) |
| DE (1) | DE2616925C2 (enExample) |
| FR (1) | FR2309980A1 (enExample) |
| GB (1) | GB1541067A (enExample) |
| IT (1) | IT1064230B (enExample) |
| NL (1) | NL185484C (enExample) |
| SE (1) | SE414095B (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3030564A1 (de) * | 1980-08-13 | 1982-03-11 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Halbleiterbauelement fuer hohe sperrspannungen |
| JPS63253664A (ja) * | 1987-04-10 | 1988-10-20 | Sony Corp | バイポ−ラトランジスタ |
| DE4119904A1 (de) * | 1991-06-17 | 1992-12-24 | Telefunken Electronic Gmbh | Halbleiteranordnung |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1439417B2 (de) * | 1964-07-21 | 1976-09-23 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen einer halbleiteranordnung |
| US3442723A (en) * | 1964-12-30 | 1969-05-06 | Sony Corp | Method of making a semiconductor junction by diffusion |
| US3772577A (en) * | 1972-02-10 | 1973-11-13 | Texas Instruments Inc | Guard ring mesa construction for low and high voltage npn and pnp transistors and diodes and method of making same |
| JPS5026477A (enExample) * | 1973-07-09 | 1975-03-19 |
-
1975
- 1975-04-28 NL NLAANVRAGE7504990,A patent/NL185484C/xx not_active IP Right Cessation
-
1976
- 1976-02-16 SE SE7601693A patent/SE414095B/xx unknown
- 1976-04-15 DE DE2616925A patent/DE2616925C2/de not_active Expired
- 1976-04-21 CA CA250,679A patent/CA1057412A/en not_active Expired
- 1976-04-23 IT IT22641/76A patent/IT1064230B/it active
- 1976-04-23 GB GB16559/76A patent/GB1541067A/en not_active Expired
- 1976-04-23 CH CH516076A patent/CH600572A5/xx not_active IP Right Cessation
- 1976-04-26 JP JP51046693A patent/JPS51139782A/ja active Granted
- 1976-04-26 BE BE166471A patent/BE841135A/xx unknown
- 1976-04-27 AU AU13336/76A patent/AU497831B2/en not_active Expired
- 1976-04-28 FR FR7612536A patent/FR2309980A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| CA1057412A (en) | 1979-06-26 |
| JPS5724933B2 (enExample) | 1982-05-26 |
| SE414095B (sv) | 1980-07-07 |
| CH600572A5 (enExample) | 1978-06-15 |
| FR2309980A1 (fr) | 1976-11-26 |
| NL185484B (nl) | 1989-11-16 |
| NL7504990A (nl) | 1976-11-01 |
| GB1541067A (en) | 1979-02-21 |
| DE2616925A1 (de) | 1976-11-11 |
| IT1064230B (it) | 1985-02-18 |
| FR2309980B1 (enExample) | 1981-09-18 |
| BE841135A (fr) | 1976-10-26 |
| JPS51139782A (en) | 1976-12-02 |
| AU497831B2 (en) | 1979-01-11 |
| SE7601693L (sv) | 1976-10-29 |
| AU1333676A (en) | 1977-11-03 |
| NL185484C (nl) | 1990-04-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8181 | Inventor (new situation) |
Free format text: SMULDERS, WALTER HENRICUS MARIA MAGDALA, EINDHOVEN, NL |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |