JPS51139782A - Semiconductor device and method of producing same - Google Patents

Semiconductor device and method of producing same

Info

Publication number
JPS51139782A
JPS51139782A JP51046693A JP4669376A JPS51139782A JP S51139782 A JPS51139782 A JP S51139782A JP 51046693 A JP51046693 A JP 51046693A JP 4669376 A JP4669376 A JP 4669376A JP S51139782 A JPS51139782 A JP S51139782A
Authority
JP
Japan
Prior art keywords
semiconductor device
producing same
producing
same
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP51046693A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5724933B2 (enExample
Inventor
Henrikasu Maria Maguda Barutaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS51139782A publication Critical patent/JPS51139782A/ja
Publication of JPS5724933B2 publication Critical patent/JPS5724933B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/441—Vertical BJTs having an emitter-base junction ending at a main surface of the body and a base-collector junction ending at a lateral surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Bipolar Transistors (AREA)
JP51046693A 1975-04-28 1976-04-26 Semiconductor device and method of producing same Granted JPS51139782A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7504990,A NL185484C (nl) 1975-04-28 1975-04-28 Halfgeleiderinrichting met een halfgeleiderlichaam bevattende tenminste een transistor.

Publications (2)

Publication Number Publication Date
JPS51139782A true JPS51139782A (en) 1976-12-02
JPS5724933B2 JPS5724933B2 (enExample) 1982-05-26

Family

ID=19823659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51046693A Granted JPS51139782A (en) 1975-04-28 1976-04-26 Semiconductor device and method of producing same

Country Status (11)

Country Link
JP (1) JPS51139782A (enExample)
AU (1) AU497831B2 (enExample)
BE (1) BE841135A (enExample)
CA (1) CA1057412A (enExample)
CH (1) CH600572A5 (enExample)
DE (1) DE2616925C2 (enExample)
FR (1) FR2309980A1 (enExample)
GB (1) GB1541067A (enExample)
IT (1) IT1064230B (enExample)
NL (1) NL185484C (enExample)
SE (1) SE414095B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3030564A1 (de) * 1980-08-13 1982-03-11 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleiterbauelement fuer hohe sperrspannungen
JPS63253664A (ja) * 1987-04-10 1988-10-20 Sony Corp バイポ−ラトランジスタ
DE4119904A1 (de) * 1991-06-17 1992-12-24 Telefunken Electronic Gmbh Halbleiteranordnung

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5026477A (enExample) * 1973-07-09 1975-03-19

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1439417B2 (de) * 1964-07-21 1976-09-23 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen einer halbleiteranordnung
US3442723A (en) * 1964-12-30 1969-05-06 Sony Corp Method of making a semiconductor junction by diffusion
US3772577A (en) * 1972-02-10 1973-11-13 Texas Instruments Inc Guard ring mesa construction for low and high voltage npn and pnp transistors and diodes and method of making same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5026477A (enExample) * 1973-07-09 1975-03-19

Also Published As

Publication number Publication date
CA1057412A (en) 1979-06-26
JPS5724933B2 (enExample) 1982-05-26
SE414095B (sv) 1980-07-07
CH600572A5 (enExample) 1978-06-15
FR2309980A1 (fr) 1976-11-26
NL185484B (nl) 1989-11-16
NL7504990A (nl) 1976-11-01
GB1541067A (en) 1979-02-21
DE2616925A1 (de) 1976-11-11
IT1064230B (it) 1985-02-18
DE2616925C2 (de) 1983-04-14
FR2309980B1 (enExample) 1981-09-18
BE841135A (fr) 1976-10-26
AU497831B2 (en) 1979-01-11
SE7601693L (sv) 1976-10-29
AU1333676A (en) 1977-11-03
NL185484C (nl) 1990-04-17

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