DE2613490C3 - Verfahren zum Entfernen von Vorsprüngen von der Oberfläche einer Halbleiterschicht - Google Patents
Verfahren zum Entfernen von Vorsprüngen von der Oberfläche einer HalbleiterschichtInfo
- Publication number
- DE2613490C3 DE2613490C3 DE2613490A DE2613490A DE2613490C3 DE 2613490 C3 DE2613490 C3 DE 2613490C3 DE 2613490 A DE2613490 A DE 2613490A DE 2613490 A DE2613490 A DE 2613490A DE 2613490 C3 DE2613490 C3 DE 2613490C3
- Authority
- DE
- Germany
- Prior art keywords
- protrusions
- projections
- dielectric layer
- layer
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 23
- 239000004065 semiconductor Substances 0.000 title claims description 11
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000000576 coating method Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
- H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
- H01L21/31056—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching the removal being a selective chemical etching step, e.g. selective dry etching through a mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/017—Clean surfaces
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
- Formation Of Insulating Films (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/563,722 US3990925A (en) | 1975-03-31 | 1975-03-31 | Removal of projections on epitaxial layers |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2613490A1 DE2613490A1 (de) | 1976-10-14 |
| DE2613490B2 DE2613490B2 (de) | 1978-04-13 |
| DE2613490C3 true DE2613490C3 (de) | 1981-10-08 |
Family
ID=24251640
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2613490A Expired DE2613490C3 (de) | 1975-03-31 | 1976-03-30 | Verfahren zum Entfernen von Vorsprüngen von der Oberfläche einer Halbleiterschicht |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3990925A (enExample) |
| JP (1) | JPS51121266A (enExample) |
| CA (1) | CA1042115A (enExample) |
| DE (1) | DE2613490C3 (enExample) |
| FR (1) | FR2306529A1 (enExample) |
| GB (1) | GB1537306A (enExample) |
| IT (1) | IT1058695B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5244173A (en) * | 1975-10-06 | 1977-04-06 | Hitachi Ltd | Method of flat etching of silicon substrate |
| JPS5527686A (en) * | 1978-08-21 | 1980-02-27 | Sony Corp | Projection eliminating device |
| JPS5612723A (en) * | 1979-07-11 | 1981-02-07 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS56114315A (en) * | 1980-02-14 | 1981-09-08 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS57115824A (en) * | 1981-01-10 | 1982-07-19 | Nec Home Electronics Ltd | Removing epitaxial layer mound |
| DE3524765A1 (de) * | 1985-07-11 | 1987-01-22 | Licentia Gmbh | Verfahren zum herstellen einer durchsichtphotokathode |
| JPS62128516A (ja) * | 1985-11-29 | 1987-06-10 | Shin Etsu Handotai Co Ltd | 半導体ウエ−ハの突起物除去方法 |
| DE3721940A1 (de) * | 1987-07-02 | 1989-01-12 | Ibm Deutschland | Entfernen von partikeln von oberflaechen fester koerper durch laserbeschuss |
| JP3060714B2 (ja) * | 1992-04-15 | 2000-07-10 | 日本電気株式会社 | 半導体集積回路の製造方法 |
| JP2011096935A (ja) * | 2009-10-30 | 2011-05-12 | Fujifilm Corp | エピタキシャルウエハ、エピタキシャルウエハの製造方法、発光素子ウエハ、発光素子ウエハの製造方法、及び発光素子 |
| FR2994615A1 (fr) * | 2012-08-14 | 2014-02-21 | Commissariat Energie Atomique | Procede de planarisation d'une couche epitaxiee |
| WO2019054292A1 (ja) | 2017-09-14 | 2019-03-21 | 信越化学工業株式会社 | 水中油型乳化組成物の製造方法及び化粧料 |
| JP2019090956A (ja) * | 2017-11-16 | 2019-06-13 | 旭化成エレクトロニクス株式会社 | 光学素子の製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1652225A1 (de) * | 1967-08-21 | 1971-04-22 | Halbleiterwerk Frankfurt Oder | Verfahren zum Abtragen und Polieren von Halbleiterkoerpern,insbesondere Silizium-Einkristallscheiben |
| US3656671A (en) * | 1970-03-16 | 1972-04-18 | Ibm | Frangible projection removal |
| US3699644A (en) * | 1971-01-04 | 1972-10-24 | Sylvania Electric Prod | Method of dividing wafers |
| US3783044A (en) * | 1971-04-09 | 1974-01-01 | Motorola Inc | Photoresist keys and depth indicator |
| US3718514A (en) * | 1971-05-28 | 1973-02-27 | Bell Telephone Labor Inc | Removal of projections on epitaxial layers |
| BE789090A (fr) * | 1971-09-22 | 1973-01-15 | Western Electric Co | Procede et solution d'attaque de semi-conducteurs |
| US3838501A (en) * | 1973-02-09 | 1974-10-01 | Honeywell Inf Systems | Method in microcircuit package assembly providing nonabrasive, electrically passive edges on integrated circuit chips |
-
1975
- 1975-03-31 US US05/563,722 patent/US3990925A/en not_active Expired - Lifetime
-
1976
- 1976-02-23 CA CA246,348A patent/CA1042115A/en not_active Expired
- 1976-03-26 GB GB12359/76A patent/GB1537306A/en not_active Expired
- 1976-03-29 JP JP51033693A patent/JPS51121266A/ja active Granted
- 1976-03-29 IT IT21687/76A patent/IT1058695B/it active
- 1976-03-30 DE DE2613490A patent/DE2613490C3/de not_active Expired
- 1976-03-30 FR FR7609221A patent/FR2306529A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE2613490B2 (de) | 1978-04-13 |
| IT1058695B (it) | 1982-05-10 |
| JPS51121266A (en) | 1976-10-23 |
| FR2306529A1 (fr) | 1976-10-29 |
| JPS5533176B2 (enExample) | 1980-08-29 |
| USB563722I5 (enExample) | 1976-01-13 |
| US3990925A (en) | 1976-11-09 |
| CA1042115A (en) | 1978-11-07 |
| GB1537306A (en) | 1978-12-29 |
| FR2306529B1 (enExample) | 1978-05-19 |
| DE2613490A1 (de) | 1976-10-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |