DE2557079C2 - Verfahren zum Herstellen einer Maskierungsschicht - Google Patents

Verfahren zum Herstellen einer Maskierungsschicht

Info

Publication number
DE2557079C2
DE2557079C2 DE2557079A DE2557079A DE2557079C2 DE 2557079 C2 DE2557079 C2 DE 2557079C2 DE 2557079 A DE2557079 A DE 2557079A DE 2557079 A DE2557079 A DE 2557079A DE 2557079 C2 DE2557079 C2 DE 2557079C2
Authority
DE
Germany
Prior art keywords
silicon nitride
silicon
layer
reaction gas
semiconductor body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2557079A
Other languages
German (de)
English (en)
Other versions
DE2557079A1 (de
Inventor
Armin Dipl.-Phys. 7031 Ehningen Bohg
Eckehard 7030 Böblingen Ebert
Erich 7032 Sindelfingen Mirbach
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IBM Deutschland GmbH
Original Assignee
IBM Deutschland GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IBM Deutschland GmbH filed Critical IBM Deutschland GmbH
Priority to DE2557079A priority Critical patent/DE2557079C2/de
Priority to US05/720,542 priority patent/US4091169A/en
Priority to FR7632458A priority patent/FR2335952A1/fr
Priority to GB45667/76A priority patent/GB1500238A/en
Priority to IT29129/76A priority patent/IT1123672B/it
Priority to JP51144080A priority patent/JPS5275986A/ja
Priority to CA268,095A priority patent/CA1078972A/en
Publication of DE2557079A1 publication Critical patent/DE2557079A1/de
Application granted granted Critical
Publication of DE2557079C2 publication Critical patent/DE2557079C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6506—Formation of intermediate materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Weting (AREA)
  • Local Oxidation Of Silicon (AREA)
DE2557079A 1975-12-18 1975-12-18 Verfahren zum Herstellen einer Maskierungsschicht Expired DE2557079C2 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE2557079A DE2557079C2 (de) 1975-12-18 1975-12-18 Verfahren zum Herstellen einer Maskierungsschicht
US05/720,542 US4091169A (en) 1975-12-18 1976-09-07 Silicon oxide/silicon nitride mask with improved integrity for semiconductor fabrication
FR7632458A FR2335952A1 (fr) 1975-12-18 1976-10-18 Procede de fabrication d'une couche de masquage et dispositifs obtenus
GB45667/76A GB1500238A (en) 1975-12-18 1976-11-03 Masking layer for a semi-conductor body
IT29129/76A IT1123672B (it) 1975-12-18 1976-11-09 Processo per la fabbricazione di uno strato di mascheramento per corpi di silicio
JP51144080A JPS5275986A (en) 1975-12-18 1976-12-02 Method of forming mask layer
CA268,095A CA1078972A (en) 1975-12-18 1976-12-17 Method of making a masking layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2557079A DE2557079C2 (de) 1975-12-18 1975-12-18 Verfahren zum Herstellen einer Maskierungsschicht

Publications (2)

Publication Number Publication Date
DE2557079A1 DE2557079A1 (de) 1977-06-30
DE2557079C2 true DE2557079C2 (de) 1984-05-24

Family

ID=5964757

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2557079A Expired DE2557079C2 (de) 1975-12-18 1975-12-18 Verfahren zum Herstellen einer Maskierungsschicht

Country Status (7)

Country Link
US (1) US4091169A (online.php)
JP (1) JPS5275986A (online.php)
CA (1) CA1078972A (online.php)
DE (1) DE2557079C2 (online.php)
FR (1) FR2335952A1 (online.php)
GB (1) GB1500238A (online.php)
IT (1) IT1123672B (online.php)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5922381B2 (ja) * 1975-12-03 1984-05-26 株式会社東芝 ハンドウタイソシノ セイゾウホウホウ
JPS5617988A (en) * 1979-07-24 1981-02-20 Toshio Hirai Electroconductive si3n44c type noncrystalline material by chemical gas phase deposition and its manufacture
US4254161A (en) * 1979-08-16 1981-03-03 International Business Machines Corporation Prevention of low pressure chemical vapor deposition silicon dioxide undercutting and flaking
US4289801A (en) * 1980-05-21 1981-09-15 United Technologies Corporation Method for producing fine grained pyrolytic silicon nitride
US4333964A (en) * 1980-09-15 1982-06-08 General Electric Company Method of making integrated circuits
US4420497A (en) * 1981-08-24 1983-12-13 Fairchild Camera And Instrument Corporation Method of detecting and repairing latent defects in a semiconductor dielectric layer
JPS59143362A (ja) * 1983-02-03 1984-08-16 Fuji Xerox Co Ltd パツシベ−シヨン膜
US4870745A (en) * 1987-12-23 1989-10-03 Siemens-Bendix Automotive Electronics L.P. Methods of making silicon-based sensors
US4888988A (en) * 1987-12-23 1989-12-26 Siemens-Bendix Automotive Electronics L.P. Silicon based mass airflow sensor and its fabrication method
US5459346A (en) * 1988-06-28 1995-10-17 Ricoh Co., Ltd. Semiconductor substrate with electrical contact in groove
US5310446A (en) * 1990-01-10 1994-05-10 Ricoh Company, Ltd. Method for producing semiconductor film
EP0546670B2 (en) * 1991-12-13 2000-11-08 Ford Motor Company Limited Metal nitride films
FR2759362B1 (fr) 1997-02-10 1999-03-12 Saint Gobain Vitrage Substrat transparent muni d'au moins une couche mince a base de nitrure ou d'oxynitrure de silicium et son procede d'obtention
AU2001242510B2 (en) * 2000-04-28 2006-02-23 Merck Patent Gmbh Etching pastes for inorganic surfaces
DE10103524A1 (de) * 2001-01-26 2002-08-22 Infineon Technologies Ag Verfahren und Halbleiteranordnung zur Ätzung einer Schicht eines Halbleitersubstrats mittels einer siliziumhaltigen Ätzmaske
DE10150040A1 (de) * 2001-10-10 2003-04-17 Merck Patent Gmbh Kombinierte Ätz- und Dotiermedien
JP4385206B2 (ja) * 2003-01-07 2009-12-16 日本電気株式会社 電界効果トランジスタ
JP4403824B2 (ja) * 2003-05-26 2010-01-27 東京エレクトロン株式会社 シリコン窒化膜の成膜方法
US20050287747A1 (en) * 2004-06-29 2005-12-29 International Business Machines Corporation Doped nitride film, doped oxide film and other doped films
US20070048906A1 (en) * 2005-08-23 2007-03-01 Han Seung H Method for fabricating semiconductor device
US7501355B2 (en) * 2006-06-29 2009-03-10 Applied Materials, Inc. Decreasing the etch rate of silicon nitride by carbon addition

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1492719A (fr) * 1965-10-11 1967-08-18 Ibm Procédé de dépôt de films de nitrure de silicium continus ne présentant pas de trous et produits obtenus par ce procédé
US3419761A (en) * 1965-10-11 1968-12-31 Ibm Method for depositing silicon nitride insulating films and electric devices incorporating such films
DE1544287B2 (de) * 1966-04-29 1975-12-04 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen einer Schutzschicht aus Siliciumnitrid
NL6703526A (online.php) * 1966-05-02 1967-11-03
JPS5128983B1 (online.php) * 1966-10-28 1976-08-23
US3520722A (en) * 1967-05-10 1970-07-14 Rca Corp Fabrication of semiconductive devices with silicon nitride coatings
US3549411A (en) * 1967-06-27 1970-12-22 Texas Instruments Inc Method of preparing silicon nitride films
US3652331A (en) * 1968-03-22 1972-03-28 Shumpei Yamazaki Process for forming a film on the surface of a substrate by a gas phase
US3652324A (en) * 1968-08-15 1972-03-28 Westinghouse Electric Corp A METHOD OF VAPOR DEPOSITING A LAYER OF Si{11 N{11 {0 ON A SILICON BASE
US3637423A (en) * 1969-02-10 1972-01-25 Westinghouse Electric Corp Pyrolytic deposition of silicon nitride films
DE1957952A1 (de) * 1969-11-18 1971-05-27 Siemens Ag Siliciumnitridbeschichtung an Quarzwaenden fuer Diffusions- und Oxydationsreaktoren
US3874919A (en) * 1974-03-13 1975-04-01 Ibm Oxidation resistant mask layer and process for producing recessed oxide region in a silicon body
US4036653A (en) 1975-05-28 1977-07-19 E. I. Du Pont De Nemours And Company Amorphous silicon nitride composition containing carbon, and vapor phase process

Also Published As

Publication number Publication date
GB1500238A (en) 1978-02-08
JPS5320390B2 (online.php) 1978-06-26
DE2557079A1 (de) 1977-06-30
CA1078972A (en) 1980-06-03
JPS5275986A (en) 1977-06-25
FR2335952B1 (online.php) 1979-09-21
IT1123672B (it) 1986-04-30
FR2335952A1 (fr) 1977-07-15
US4091169A (en) 1978-05-23

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Legal Events

Date Code Title Description
OD Request for examination
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee