FR2335952A1 - Procede de fabrication d'une couche de masquage et dispositifs obtenus - Google Patents

Procede de fabrication d'une couche de masquage et dispositifs obtenus

Info

Publication number
FR2335952A1
FR2335952A1 FR7632458A FR7632458A FR2335952A1 FR 2335952 A1 FR2335952 A1 FR 2335952A1 FR 7632458 A FR7632458 A FR 7632458A FR 7632458 A FR7632458 A FR 7632458A FR 2335952 A1 FR2335952 A1 FR 2335952A1
Authority
FR
France
Prior art keywords
manufacturing
masking layer
devices obtained
devices
masking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7632458A
Other languages
English (en)
Other versions
FR2335952B1 (fr
Inventor
Armin Bogh
Erich Mirbach
Eckehard Ebert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2335952A1 publication Critical patent/FR2335952A1/fr
Application granted granted Critical
Publication of FR2335952B1 publication Critical patent/FR2335952B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
    • H01L21/3145—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers formed by deposition from a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/318—Inorganic layers composed of nitrides
    • H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Weting (AREA)
  • Local Oxidation Of Silicon (AREA)
FR7632458A 1975-12-18 1976-10-18 Procede de fabrication d'une couche de masquage et dispositifs obtenus Granted FR2335952A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2557079A DE2557079C2 (de) 1975-12-18 1975-12-18 Verfahren zum Herstellen einer Maskierungsschicht

Publications (2)

Publication Number Publication Date
FR2335952A1 true FR2335952A1 (fr) 1977-07-15
FR2335952B1 FR2335952B1 (fr) 1979-09-21

Family

ID=5964757

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7632458A Granted FR2335952A1 (fr) 1975-12-18 1976-10-18 Procede de fabrication d'une couche de masquage et dispositifs obtenus

Country Status (7)

Country Link
US (1) US4091169A (fr)
JP (1) JPS5275986A (fr)
CA (1) CA1078972A (fr)
DE (1) DE2557079C2 (fr)
FR (1) FR2335952A1 (fr)
GB (1) GB1500238A (fr)
IT (1) IT1123672B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0073713A2 (fr) * 1981-08-24 1983-03-09 Fairchild Semiconductor Corporation Procédé pour l'auto-régénération de diélectriques

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5922381B2 (ja) * 1975-12-03 1984-05-26 株式会社東芝 ハンドウタイソシノ セイゾウホウホウ
JPS5617988A (en) * 1979-07-24 1981-02-20 Toshio Hirai Electroconductive si3n44c type noncrystalline material by chemical gas phase deposition and its manufacture
US4254161A (en) * 1979-08-16 1981-03-03 International Business Machines Corporation Prevention of low pressure chemical vapor deposition silicon dioxide undercutting and flaking
US4289801A (en) * 1980-05-21 1981-09-15 United Technologies Corporation Method for producing fine grained pyrolytic silicon nitride
US4333964A (en) * 1980-09-15 1982-06-08 General Electric Company Method of making integrated circuits
JPS59143362A (ja) * 1983-02-03 1984-08-16 Fuji Xerox Co Ltd パツシベ−シヨン膜
US4888988A (en) * 1987-12-23 1989-12-26 Siemens-Bendix Automotive Electronics L.P. Silicon based mass airflow sensor and its fabrication method
US4870745A (en) * 1987-12-23 1989-10-03 Siemens-Bendix Automotive Electronics L.P. Methods of making silicon-based sensors
US5459346A (en) * 1988-06-28 1995-10-17 Ricoh Co., Ltd. Semiconductor substrate with electrical contact in groove
US5310446A (en) * 1990-01-10 1994-05-10 Ricoh Company, Ltd. Method for producing semiconductor film
DE69213898T2 (de) * 1991-12-13 1997-02-06 Ford Werke Ag Metallnitridfilm
FR2759362B1 (fr) 1997-02-10 1999-03-12 Saint Gobain Vitrage Substrat transparent muni d'au moins une couche mince a base de nitrure ou d'oxynitrure de silicium et son procede d'obtention
RU2274615C2 (ru) * 2000-04-28 2006-04-20 Мерк Патент Гмбх Гравировальные пасты для неорганических поверхностей
DE10103524A1 (de) * 2001-01-26 2002-08-22 Infineon Technologies Ag Verfahren und Halbleiteranordnung zur Ätzung einer Schicht eines Halbleitersubstrats mittels einer siliziumhaltigen Ätzmaske
DE10150040A1 (de) * 2001-10-10 2003-04-17 Merck Patent Gmbh Kombinierte Ätz- und Dotiermedien
JP4403824B2 (ja) * 2003-05-26 2010-01-27 東京エレクトロン株式会社 シリコン窒化膜の成膜方法
US20050287747A1 (en) * 2004-06-29 2005-12-29 International Business Machines Corporation Doped nitride film, doped oxide film and other doped films
US20070048906A1 (en) * 2005-08-23 2007-03-01 Han Seung H Method for fabricating semiconductor device
US7501355B2 (en) * 2006-06-29 2009-03-10 Applied Materials, Inc. Decreasing the etch rate of silicon nitride by carbon addition

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1492719A (fr) * 1965-10-11 1967-08-18 Ibm Procédé de dépôt de films de nitrure de silicium continus ne présentant pas de trous et produits obtenus par ce procédé
US3419761A (en) * 1965-10-11 1968-12-31 Ibm Method for depositing silicon nitride insulating films and electric devices incorporating such films
DE1544287B2 (de) * 1966-04-29 1975-12-04 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen einer Schutzschicht aus Siliciumnitrid
NL6703526A (fr) * 1966-05-02 1967-11-03
JPS5128983B1 (fr) * 1966-10-28 1976-08-23
US3520722A (en) * 1967-05-10 1970-07-14 Rca Corp Fabrication of semiconductive devices with silicon nitride coatings
US3549411A (en) * 1967-06-27 1970-12-22 Texas Instruments Inc Method of preparing silicon nitride films
US3652331A (en) * 1968-03-22 1972-03-28 Shumpei Yamazaki Process for forming a film on the surface of a substrate by a gas phase
US3652324A (en) * 1968-08-15 1972-03-28 Westinghouse Electric Corp A METHOD OF VAPOR DEPOSITING A LAYER OF Si{11 N{11 {0 ON A SILICON BASE
US3637423A (en) * 1969-02-10 1972-01-25 Westinghouse Electric Corp Pyrolytic deposition of silicon nitride films
DE1957952A1 (de) * 1969-11-18 1971-05-27 Siemens Ag Siliciumnitridbeschichtung an Quarzwaenden fuer Diffusions- und Oxydationsreaktoren
US3874919A (en) * 1974-03-13 1975-04-01 Ibm Oxidation resistant mask layer and process for producing recessed oxide region in a silicon body

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0073713A2 (fr) * 1981-08-24 1983-03-09 Fairchild Semiconductor Corporation Procédé pour l'auto-régénération de diélectriques
EP0073713A3 (en) * 1981-08-24 1985-12-18 Fairchild Camera & Instrument Corporation Process for self-healing dielectrics

Also Published As

Publication number Publication date
FR2335952B1 (fr) 1979-09-21
CA1078972A (fr) 1980-06-03
IT1123672B (it) 1986-04-30
DE2557079C2 (de) 1984-05-24
JPS5275986A (en) 1977-06-25
DE2557079A1 (de) 1977-06-30
JPS5320390B2 (fr) 1978-06-26
US4091169A (en) 1978-05-23
GB1500238A (en) 1978-02-08

Similar Documents

Publication Publication Date Title
FR2335952A1 (fr) Procede de fabrication d'une couche de masquage et dispositifs obtenus
FR2326038A1 (fr) Procede de fabrication de circuits integres auto-alignes et dispositifs en resultant
FR2347183A1 (fr) Procede de fabrication de composants d'insonorisation et composants obtenus
FR2332615A1 (fr) Procede de fabrication d'un dispositif a semi-conducteurs
FR2317852A1 (fr) Ruban d'interconnexion pour liaison d'ensemble de dispositifs semi-conducteurs et procede de fabrication d'un tel ruban
FR2301092A1 (fr) Procede de fabrication d'un semi-conducteur et semi-conducteur obtenu
BE839972A (fr) Procede pour la fabrication d'un dispositif semiconducteur
FR2348572A1 (fr) Procede de croissance d'une couche epitaxiale pour la fabrication de dispositifs a semi-conducteurs
FR2314917A1 (fr) Procede de fabrication de l'aldehyde beta-methylthiopropionique
FR2316733A1 (fr) Procede de fabrication de dispositifs a semi-conducteurs isoles dielectriquement
FR2327641A1 (fr) Fabrication de dispositifs semi-conducteurs a l'aide d'un marqueur de reference
FR2299820A2 (fr) Procede de fabrication d'un succedane d'amuse-gueule
FR2339954A1 (fr) Procede de fabrication de dispositifs mos
FR2325189A1 (fr) Procede pour la fabrication de dispositifs semi-conducteurs munis d'une couche protectrice en oxyde
BE845507A (fr) Procede de fabrication d'acyloxysilanes
BE850106A (fr) Procede de fabrication de corps en nitrone de silicium et corps obtenus
FR2463509B1 (fr) Procede de fabrication de dispositifs semi-conducteurs et dispositifs obtenus par ce procede
FR2302499A1 (fr) Procede pour la fabrication de revete
FR2308199A1 (fr) Procede de fabrication de composants semi-conducteurs et composants obtenus
FR2298198A1 (fr) Procede de fabrication de structures en guide d'ondes
FR2332335A1 (fr) Procede de production d'une couche de connexion conductrice
IT1054772B (it) Procedimento ed apparecchiatura per fabbricazione di materiale a nastro
BE856754A (fr) Procede de fabrication de fermetures a curseur
FR2326389A1 (fr) Matiere contenant du nitrure de silicium a surface auto-vitrifiante et son procede de fabrication
FR2301378A1 (fr) Procede de fabrication d'ele

Legal Events

Date Code Title Description
ST Notification of lapse