DE2554638A1 - Verfahren zur erzeugung definierter boeschungswinkel bei einer aetzkante - Google Patents

Verfahren zur erzeugung definierter boeschungswinkel bei einer aetzkante

Info

Publication number
DE2554638A1
DE2554638A1 DE19752554638 DE2554638A DE2554638A1 DE 2554638 A1 DE2554638 A1 DE 2554638A1 DE 19752554638 DE19752554638 DE 19752554638 DE 2554638 A DE2554638 A DE 2554638A DE 2554638 A1 DE2554638 A1 DE 2554638A1
Authority
DE
Germany
Prior art keywords
layer
etching
etched
edge
substrate body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19752554638
Other languages
German (de)
English (en)
Inventor
Guido Dr Rer Nat Bell
Joachim Ing Grad Hoepfner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19752554638 priority Critical patent/DE2554638A1/de
Priority to GB4434076A priority patent/GB1551290A/en
Priority to FR7635519A priority patent/FR2334199A1/fr
Priority to NL7613275A priority patent/NL7613275A/xx
Priority to IT3006476A priority patent/IT1065165B/it
Priority to JP14550976A priority patent/JPS5269576A/ja
Priority to BE172972A priority patent/BE849065A/xx
Priority to DE19772723933 priority patent/DE2723933A1/de
Publication of DE2554638A1 publication Critical patent/DE2554638A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE19752554638 1975-12-04 1975-12-04 Verfahren zur erzeugung definierter boeschungswinkel bei einer aetzkante Pending DE2554638A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE19752554638 DE2554638A1 (de) 1975-12-04 1975-12-04 Verfahren zur erzeugung definierter boeschungswinkel bei einer aetzkante
GB4434076A GB1551290A (en) 1975-12-04 1976-11-24 Ething of a layer supported on a substrate
FR7635519A FR2334199A1 (fr) 1975-12-04 1976-11-25 Procede pour realiser des angles de talus determines pour des bords de structures, realisees par attaque chimique
NL7613275A NL7613275A (nl) 1975-12-04 1976-11-29 Werkwijze voor het teweeg brengen van een bepaalde hellingshoek bij etskanten.
IT3006476A IT1065165B (it) 1975-12-04 1976-12-03 Procedimento per formare orli di incisione con un angolo di declivio definito,particolarmente utile per produrre fori di contatto e,o piste conduttrici in circuiti a semiconduttori integrati
JP14550976A JPS5269576A (en) 1975-12-04 1976-12-03 Method of making specified bevel angle at edge of etching
BE172972A BE849065A (fr) 1975-12-04 1976-12-03 Procede pour realiser des angles de talus determines pour des bords de structures realisees par attaque chimique
DE19772723933 DE2723933A1 (de) 1975-12-04 1977-05-26 Verfahren zur erzeugung definierter boeschungswinkel bei einer aetzkante

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752554638 DE2554638A1 (de) 1975-12-04 1975-12-04 Verfahren zur erzeugung definierter boeschungswinkel bei einer aetzkante

Publications (1)

Publication Number Publication Date
DE2554638A1 true DE2554638A1 (de) 1977-06-16

Family

ID=5963486

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19752554638 Pending DE2554638A1 (de) 1975-12-04 1975-12-04 Verfahren zur erzeugung definierter boeschungswinkel bei einer aetzkante

Country Status (7)

Country Link
JP (1) JPS5269576A (xx)
BE (1) BE849065A (xx)
DE (1) DE2554638A1 (xx)
FR (1) FR2334199A1 (xx)
GB (1) GB1551290A (xx)
IT (1) IT1065165B (xx)
NL (1) NL7613275A (xx)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0003213A2 (de) * 1977-12-07 1979-08-08 Siemens Aktiengesellschaft Optoelektronischer Sensor nach dem Prinzip der Ladungsinjektion und Verfahren zu seiner Herstellung
FR2435129A1 (fr) * 1978-08-28 1980-03-28 Siemens Ag Procede pour realiser un dispositif a transfert de charge pour des senseurs et des memoires
EP0981155A2 (de) * 1998-08-18 2000-02-23 Siemens Aktiengesellschaft Verfahren zur Herstellung einer Halbleiter-Isolationsschicht und eines diese Halbleiter-Isolationsschicht enthaltenden Halbleiterbauelements

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD136670A1 (de) * 1976-02-04 1979-07-18 Rudolf Sacher Verfahren und vorrichtung zur herstellung von halbleiterstrukturen
JPS55157234A (en) * 1979-05-25 1980-12-06 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS60128622A (ja) * 1983-12-16 1985-07-09 Hitachi Ltd エツチング法
GB2165692B (en) * 1984-08-25 1989-05-04 Ricoh Kk Manufacture of interconnection patterns
DE68925774T2 (de) * 1988-10-02 1996-08-08 Canon Kk Feinbearbeitungsmethode für kristallines Material
DE4140330C1 (xx) * 1991-12-06 1993-03-18 Texas Instruments Deutschland Gmbh, 8050 Freising, De
US6352934B1 (en) * 1999-08-26 2002-03-05 Infineon Technologies Ag Sidewall oxide process for improved shallow junction formation in support region
US20060175670A1 (en) * 2005-02-10 2006-08-10 Nec Compound Semiconductor Device, Ltd. Field effect transistor and method of manufacturing a field effect transistor
JP2011243657A (ja) * 2010-05-14 2011-12-01 Mitsumi Electric Co Ltd 半導体装置の製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0003213A2 (de) * 1977-12-07 1979-08-08 Siemens Aktiengesellschaft Optoelektronischer Sensor nach dem Prinzip der Ladungsinjektion und Verfahren zu seiner Herstellung
EP0003213A3 (en) * 1977-12-07 1979-09-05 Siemens Aktiengesellschaft Berlin Und Munchen Opto-electronic sensor based on the principle of charge injection and method for making it
FR2435129A1 (fr) * 1978-08-28 1980-03-28 Siemens Ag Procede pour realiser un dispositif a transfert de charge pour des senseurs et des memoires
EP0981155A2 (de) * 1998-08-18 2000-02-23 Siemens Aktiengesellschaft Verfahren zur Herstellung einer Halbleiter-Isolationsschicht und eines diese Halbleiter-Isolationsschicht enthaltenden Halbleiterbauelements
EP0981155A3 (de) * 1998-08-18 2000-03-22 Siemens Aktiengesellschaft Verfahren zur Herstellung einer Halbleiter-Isolationsschicht und eines diese Halbleiter-Isolationsschicht enthaltenden Halbleiterbauelements
US6365525B2 (en) 1998-08-18 2002-04-02 Siemens Aktiengesellschaft Method of fabricating a semiconductor insulation layer

Also Published As

Publication number Publication date
GB1551290A (en) 1979-08-30
IT1065165B (it) 1985-02-25
FR2334199B1 (xx) 1979-04-06
JPS5269576A (en) 1977-06-09
FR2334199A1 (fr) 1977-07-01
BE849065A (fr) 1977-04-01
NL7613275A (nl) 1977-06-07

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