DE2547303A1 - Halbleiterbauelement - Google Patents
HalbleiterbauelementInfo
- Publication number
- DE2547303A1 DE2547303A1 DE19752547303 DE2547303A DE2547303A1 DE 2547303 A1 DE2547303 A1 DE 2547303A1 DE 19752547303 DE19752547303 DE 19752547303 DE 2547303 A DE2547303 A DE 2547303A DE 2547303 A1 DE2547303 A1 DE 2547303A1
- Authority
- DE
- Germany
- Prior art keywords
- region
- area
- junction
- semiconductor
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 41
- 238000009792 diffusion process Methods 0.000 claims description 47
- 239000002800 charge carrier Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 12
- 230000006798 recombination Effects 0.000 claims description 7
- 238000005215 recombination Methods 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 6
- 230000007704 transition Effects 0.000 claims description 6
- 239000000969 carrier Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 4
- 239000012535 impurity Substances 0.000 description 6
- 230000003321 amplification Effects 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 102100035591 POU domain, class 2, transcription factor 2 Human genes 0.000 description 1
- 101710084411 POU domain, class 2, transcription factor 2 Proteins 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/148—Cathode regions of thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/617—Combinations of vertical BJTs and only diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/67—Complementary BJTs
- H10D84/673—Vertical complementary BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12586874A JPS5724659B2 (enrdf_load_stackoverflow) | 1974-10-31 | 1974-10-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2547303A1 true DE2547303A1 (de) | 1976-05-06 |
Family
ID=14920910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19752547303 Withdrawn DE2547303A1 (de) | 1974-10-31 | 1975-10-22 | Halbleiterbauelement |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5724659B2 (enrdf_load_stackoverflow) |
| CA (1) | CA1056068A (enrdf_load_stackoverflow) |
| DE (1) | DE2547303A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2290039A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1514578A (enrdf_load_stackoverflow) |
| IT (1) | IT1044307B (enrdf_load_stackoverflow) |
| NL (1) | NL7512681A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT374053B (de) * | 1974-04-10 | 1984-03-12 | Sony Corp | Differenzverstaerker mit steuerbarer verstaerkung |
| AT374052B (de) * | 1974-04-04 | 1984-03-12 | Sony Corp | Differenzverstaerker mit steuerbarer verstaerkung |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2413785A1 (fr) * | 1977-12-30 | 1979-07-27 | Radiotechnique Compelec | Dispositif semi-conducteur monolithique a structure plane multicouche, de type mesa, comprenant au moins un transistor associe a une diode schottky |
| FR2462028A1 (fr) * | 1979-07-17 | 1981-02-06 | Thomson Csf | Structure de thyristor pour circuit integre et son procede de fabrication |
| FR2543739B1 (fr) * | 1983-03-30 | 1986-04-18 | Radiotechnique Compelec | Procede de realisation d'un transistor bipolaire haute tension |
| CN116047256B (zh) * | 2023-03-24 | 2023-08-29 | 长鑫存储技术有限公司 | 测试方法、测试装置及电子设备 |
-
1974
- 1974-10-31 JP JP12586874A patent/JPS5724659B2/ja not_active Expired
-
1975
- 1975-10-16 GB GB42496/75A patent/GB1514578A/en not_active Expired
- 1975-10-20 CA CA237,952A patent/CA1056068A/en not_active Expired
- 1975-10-22 DE DE19752547303 patent/DE2547303A1/de not_active Withdrawn
- 1975-10-29 NL NL7512681A patent/NL7512681A/xx not_active Application Discontinuation
- 1975-10-30 FR FR7533224A patent/FR2290039A1/fr active Granted
- 1975-10-31 IT IT28898/75A patent/IT1044307B/it active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT374052B (de) * | 1974-04-04 | 1984-03-12 | Sony Corp | Differenzverstaerker mit steuerbarer verstaerkung |
| AT374053B (de) * | 1974-04-10 | 1984-03-12 | Sony Corp | Differenzverstaerker mit steuerbarer verstaerkung |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2290039B3 (enrdf_load_stackoverflow) | 1979-09-14 |
| CA1056068A (en) | 1979-06-05 |
| GB1514578A (en) | 1978-06-14 |
| JPS5151286A (enrdf_load_stackoverflow) | 1976-05-06 |
| JPS5724659B2 (enrdf_load_stackoverflow) | 1982-05-25 |
| IT1044307B (it) | 1980-03-20 |
| NL7512681A (nl) | 1976-05-04 |
| FR2290039A1 (fr) | 1976-05-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8125 | Change of the main classification |
Ipc: H01L 29/72 |
|
| AF | Is addition to no. |
Ref country code: DE Ref document number: 2364753 Format of ref document f/p: P |
|
| 8130 | Withdrawal |