DE2539021A1 - Feldeffekttransistor - Google Patents
FeldeffekttransistorInfo
- Publication number
- DE2539021A1 DE2539021A1 DE19752539021 DE2539021A DE2539021A1 DE 2539021 A1 DE2539021 A1 DE 2539021A1 DE 19752539021 DE19752539021 DE 19752539021 DE 2539021 A DE2539021 A DE 2539021A DE 2539021 A1 DE2539021 A1 DE 2539021A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- areas
- gate
- area
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 230000005669 field effect Effects 0.000 title claims description 47
- 238000009792 diffusion process Methods 0.000 claims description 83
- 238000000034 method Methods 0.000 claims description 51
- 239000004065 semiconductor Substances 0.000 claims description 25
- 239000000126 substance Substances 0.000 claims description 23
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 9
- 230000009471 action Effects 0.000 claims description 8
- 239000011810 insulating material Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims description 2
- 208000021302 gastroesophageal reflux disease Diseases 0.000 claims 3
- 230000008961 swelling Effects 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 69
- 235000012239 silicon dioxide Nutrition 0.000 description 34
- 239000000377 silicon dioxide Substances 0.000 description 34
- 238000004519 manufacturing process Methods 0.000 description 26
- 239000007789 gas Substances 0.000 description 22
- 239000012535 impurity Substances 0.000 description 21
- 238000001259 photo etching Methods 0.000 description 21
- 230000008569 process Effects 0.000 description 21
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 20
- 125000004429 atom Chemical group 0.000 description 19
- 238000010438 heat treatment Methods 0.000 description 19
- 230000004888 barrier function Effects 0.000 description 18
- 239000011521 glass Substances 0.000 description 14
- 238000010276 construction Methods 0.000 description 12
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 9
- 229910052796 boron Inorganic materials 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 8
- 230000008859 change Effects 0.000 description 6
- 238000005755 formation reaction Methods 0.000 description 6
- 239000002585 base Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- 125000004437 phosphorous atom Chemical group 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000013642 negative control Substances 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- DJHGAFSJWGLOIV-UHFFFAOYSA-N Arsenic acid Chemical compound O[As](O)(O)=O DJHGAFSJWGLOIV-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229940000488 arsenic acid Drugs 0.000 description 1
- XRFXFAVKXJREHL-UHFFFAOYSA-N arsinine Chemical compound [As]1=CC=CC=C1 XRFXFAVKXJREHL-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
- H10D30/831—Vertical FETs having PN junction gate electrodes
Landscapes
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10155574A JPS5739062B2 (enrdf_load_stackoverflow) | 1974-09-04 | 1974-09-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2539021A1 true DE2539021A1 (de) | 1976-03-25 |
Family
ID=14303654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19752539021 Ceased DE2539021A1 (de) | 1974-09-04 | 1975-09-02 | Feldeffekttransistor |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5739062B2 (enrdf_load_stackoverflow) |
| CA (1) | CA1035052A (enrdf_load_stackoverflow) |
| DE (1) | DE2539021A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2284194A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1525732A (enrdf_load_stackoverflow) |
| NL (1) | NL7510282A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5299787A (en) * | 1976-02-18 | 1977-08-22 | Toshiba Corp | Junction type field effect transistor and its production |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB837651A (en) * | 1956-12-10 | 1960-06-15 | Teszner Stanislas | High power field-effect transistor |
| JPS5418112B2 (enrdf_load_stackoverflow) * | 1971-12-20 | 1979-07-05 | ||
| NL7303347A (enrdf_load_stackoverflow) * | 1972-03-10 | 1973-09-12 |
-
1974
- 1974-09-04 JP JP10155574A patent/JPS5739062B2/ja not_active Expired
-
1975
- 1975-08-20 CA CA233,828A patent/CA1035052A/en not_active Expired
- 1975-08-29 GB GB35690/75A patent/GB1525732A/en not_active Expired
- 1975-09-01 NL NL7510282A patent/NL7510282A/xx not_active Application Discontinuation
- 1975-09-02 DE DE19752539021 patent/DE2539021A1/de not_active Ceased
- 1975-09-04 FR FR7527176A patent/FR2284194A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2284194B1 (enrdf_load_stackoverflow) | 1979-01-19 |
| GB1525732A (en) | 1978-09-20 |
| FR2284194A1 (fr) | 1976-04-02 |
| NL7510282A (nl) | 1976-03-08 |
| JPS5739062B2 (enrdf_load_stackoverflow) | 1982-08-19 |
| CA1035052A (en) | 1978-07-18 |
| JPS5128763A (enrdf_load_stackoverflow) | 1976-03-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8131 | Rejection |