GB1525732A - Junction field effect transistors - Google Patents
Junction field effect transistorsInfo
- Publication number
- GB1525732A GB1525732A GB35690/75A GB3569075A GB1525732A GB 1525732 A GB1525732 A GB 1525732A GB 35690/75 A GB35690/75 A GB 35690/75A GB 3569075 A GB3569075 A GB 3569075A GB 1525732 A GB1525732 A GB 1525732A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- source
- jugfet
- gate region
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
- H10D30/831—Vertical FETs having PN junction gate electrodes
Landscapes
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10155574A JPS5739062B2 (enrdf_load_stackoverflow) | 1974-09-04 | 1974-09-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1525732A true GB1525732A (en) | 1978-09-20 |
Family
ID=14303654
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB35690/75A Expired GB1525732A (en) | 1974-09-04 | 1975-08-29 | Junction field effect transistors |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5739062B2 (enrdf_load_stackoverflow) |
CA (1) | CA1035052A (enrdf_load_stackoverflow) |
DE (1) | DE2539021A1 (enrdf_load_stackoverflow) |
FR (1) | FR2284194A1 (enrdf_load_stackoverflow) |
GB (1) | GB1525732A (enrdf_load_stackoverflow) |
NL (1) | NL7510282A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5299787A (en) * | 1976-02-18 | 1977-08-22 | Toshiba Corp | Junction type field effect transistor and its production |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB837651A (en) * | 1956-12-10 | 1960-06-15 | Teszner Stanislas | High power field-effect transistor |
JPS5418112B2 (enrdf_load_stackoverflow) * | 1971-12-20 | 1979-07-05 | ||
NL7303347A (enrdf_load_stackoverflow) * | 1972-03-10 | 1973-09-12 |
-
1974
- 1974-09-04 JP JP10155574A patent/JPS5739062B2/ja not_active Expired
-
1975
- 1975-08-20 CA CA233,828A patent/CA1035052A/en not_active Expired
- 1975-08-29 GB GB35690/75A patent/GB1525732A/en not_active Expired
- 1975-09-01 NL NL7510282A patent/NL7510282A/xx not_active Application Discontinuation
- 1975-09-02 DE DE19752539021 patent/DE2539021A1/de not_active Ceased
- 1975-09-04 FR FR7527176A patent/FR2284194A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2284194B1 (enrdf_load_stackoverflow) | 1979-01-19 |
DE2539021A1 (de) | 1976-03-25 |
FR2284194A1 (fr) | 1976-04-02 |
NL7510282A (nl) | 1976-03-08 |
JPS5739062B2 (enrdf_load_stackoverflow) | 1982-08-19 |
CA1035052A (en) | 1978-07-18 |
JPS5128763A (enrdf_load_stackoverflow) | 1976-03-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1357515A (en) | Method for manufacturing an mos integrated circuit | |
GB1450171A (en) | Manufacture of mosfets | |
JPS5316581A (en) | Insulated gate type field effect transistor | |
GB1341625A (en) | Self-aligned gate field effect transistor and method of preparing | |
CA927522A (en) | Low noise field effect transistor with channel having subsurface portion of high conductivity | |
ES397182A1 (es) | Un metodo de fabricacion de un dispositivo semiconductor. | |
GB1188799A (en) | Insulated Gate Field Effect Devices. | |
GB1090696A (en) | Improvements in or relating to semiconductor devices | |
GB1525732A (en) | Junction field effect transistors | |
JPS5244577A (en) | Junction type field effect transistor | |
GB1277744A (en) | Unipolar device | |
JPS5382179A (en) | Field effect transistor | |
JPS55111171A (en) | Field-effect semiconductor device | |
GB1335037A (en) | Field effect transistor | |
JPS5299787A (en) | Junction type field effect transistor and its production | |
JPS534479A (en) | Production of junction type field effect transistor | |
JPS5380172A (en) | Semiconductor device | |
JPS52128080A (en) | Junction-type field effect transistor | |
JPS5521187A (en) | Semiconductor device | |
JPS5435684A (en) | Junction type field effect transistor | |
JPS5612773A (en) | Silicon gate mos field-effect transistor | |
JPS5347783A (en) | Production of junction type field effect transistor | |
GB1107576A (en) | Field-effect transistor | |
GB1325116A (en) | Transistor and method of manufacturing thereof | |
GB1072937A (en) | Field effect assembly |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PE20 | Patent expired after termination of 20 years |
Effective date: 19950828 |