DE2516393A1 - Verfahren zum herstellen von metall- oxyd-halbleiter-schaltungen - Google Patents

Verfahren zum herstellen von metall- oxyd-halbleiter-schaltungen

Info

Publication number
DE2516393A1
DE2516393A1 DE19752516393 DE2516393A DE2516393A1 DE 2516393 A1 DE2516393 A1 DE 2516393A1 DE 19752516393 DE19752516393 DE 19752516393 DE 2516393 A DE2516393 A DE 2516393A DE 2516393 A1 DE2516393 A1 DE 2516393A1
Authority
DE
Germany
Prior art keywords
source
layer
areas
insulating material
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19752516393
Other languages
German (de)
English (en)
Inventor
Robert Lee Luce
Joseph Palen Perry
James Douglas Sansbury
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of DE2516393A1 publication Critical patent/DE2516393A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/919—Compensation doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE19752516393 1974-05-03 1975-04-15 Verfahren zum herstellen von metall- oxyd-halbleiter-schaltungen Pending DE2516393A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US466566A US3912558A (en) 1974-05-03 1974-05-03 Method of MOS circuit fabrication

Publications (1)

Publication Number Publication Date
DE2516393A1 true DE2516393A1 (de) 1975-11-13

Family

ID=23852254

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19752516393 Pending DE2516393A1 (de) 1974-05-03 1975-04-15 Verfahren zum herstellen von metall- oxyd-halbleiter-schaltungen

Country Status (6)

Country Link
US (1) US3912558A (enExample)
JP (1) JPS5543631B2 (enExample)
CA (1) CA1008973A (enExample)
DE (1) DE2516393A1 (enExample)
FR (1) FR2269792A1 (enExample)
GB (1) GB1494708A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4030952A (en) * 1974-04-18 1977-06-21 Fairchild Camera And Instrument Corporation Method of MOS circuit fabrication
US4097314A (en) * 1976-12-30 1978-06-27 Rca Corp. Method of making a sapphire gate transistor
JPS53115173A (en) * 1977-03-18 1978-10-07 Hitachi Ltd Production of semiconductor device
JPS5492175A (en) * 1977-12-29 1979-07-21 Fujitsu Ltd Manufacture of semiconductor device
CA1174285A (en) * 1980-04-28 1984-09-11 Michelangelo Delfino Laser induced flow of integrated circuit structure materials
US4542037A (en) * 1980-04-28 1985-09-17 Fairchild Camera And Instrument Corporation Laser induced flow of glass bonded materials
JP2565317B2 (ja) * 1986-12-03 1996-12-18 富士通株式会社 半導体装置の製造方法
JP3123937B2 (ja) * 1996-11-26 2001-01-15 日本電気株式会社 半導体装置およびその製造方法
US9701629B2 (en) 2000-12-08 2017-07-11 Sony Deutschland Gmbh Use of dithiocarbamate esters and bis-dithiocarbamate esters in the preparation of organic-inorganic nanocomposites
EP1215205B1 (en) 2000-12-08 2007-11-21 Sony Deutschland GmbH Tuned multifunctional linker molecules for electronic charge transport through organic-inorganic composite structures and use thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3476619A (en) * 1966-09-13 1969-11-04 Motorola Inc Semiconductor device stabilization
DE2040180B2 (de) * 1970-01-22 1977-08-25 Intel Corp, Mountain View, Calif. (V.St.A.) Verfahren zur verhinderung von mechanischen bruechen einer duennen, die oberflaeche eines halbleiterkoerpers ueberdeckende isolierschichten ueberziehenden elektrisch leitenden schicht
US3756876A (en) * 1970-10-27 1973-09-04 Cogar Corp Fabrication process for field effect and bipolar transistor devices
JPS4929785B1 (enExample) * 1970-10-30 1974-08-07

Also Published As

Publication number Publication date
FR2269792A1 (enExample) 1975-11-28
JPS5543631B2 (enExample) 1980-11-07
GB1494708A (en) 1977-12-14
CA1008973A (en) 1977-04-19
JPS50142174A (enExample) 1975-11-15
US3912558A (en) 1975-10-14

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