JPS4929785B1 - - Google Patents
Info
- Publication number
- JPS4929785B1 JPS4929785B1 JP45095083A JP9508370A JPS4929785B1 JP S4929785 B1 JPS4929785 B1 JP S4929785B1 JP 45095083 A JP45095083 A JP 45095083A JP 9508370 A JP9508370 A JP 9508370A JP S4929785 B1 JPS4929785 B1 JP S4929785B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/60—Lateral BJTs
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- H10P76/40—
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- H10P95/00—
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- H10W74/40—
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- H10W74/43—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/114—Nitrides of silicon
Landscapes
- Bipolar Transistors (AREA)
- Weting (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP45095083A JPS4929785B1 (enExample) | 1970-10-30 | 1970-10-30 | |
| US00193854A US3850708A (en) | 1970-10-30 | 1971-10-29 | Method of fabricating semiconductor device using at least two sorts of insulating films different from each other |
| DE19712154120 DE2154120A1 (de) | 1970-10-30 | 1971-10-29 | Verfahren zur Herstellung von Halbleiter-Anordnungen |
| NL7114918A NL7114918A (enExample) | 1970-10-30 | 1971-10-29 | |
| US05/500,067 US3977920A (en) | 1970-10-30 | 1974-08-23 | Method of fabricating semiconductor device using at least two sorts of insulating films different from each other |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP45095083A JPS4929785B1 (enExample) | 1970-10-30 | 1970-10-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4929785B1 true JPS4929785B1 (enExample) | 1974-08-07 |
Family
ID=14128035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP45095083A Pending JPS4929785B1 (enExample) | 1970-10-30 | 1970-10-30 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3850708A (enExample) |
| JP (1) | JPS4929785B1 (enExample) |
| DE (1) | DE2154120A1 (enExample) |
| NL (1) | NL7114918A (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3912558A (en) * | 1974-05-03 | 1975-10-14 | Fairchild Camera Instr Co | Method of MOS circuit fabrication |
| US3967988A (en) * | 1974-08-05 | 1976-07-06 | Motorola, Inc. | Diffusion guarded metal-oxide-silicon field effect transistors |
| FR2501912A1 (fr) * | 1981-03-13 | 1982-09-17 | Efcis | Transistor bipolaire lateral sur isolant et son procede de fabrication |
| GB2158639B (en) * | 1984-05-12 | 1988-02-10 | Ferranti Plc | Fabricating semiconductor devices |
| US4589002A (en) * | 1984-07-18 | 1986-05-13 | Rca Corporation | Diode structure |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3326729A (en) * | 1963-08-20 | 1967-06-20 | Hughes Aircraft Co | Epitaxial method for the production of microcircuit components |
| US3342650A (en) * | 1964-02-10 | 1967-09-19 | Hitachi Ltd | Method of making semiconductor devices by double masking |
| GB1150834A (en) * | 1966-10-05 | 1969-05-07 | Rca Corp | Method of fabricating semiconductor devices |
| US3544399A (en) * | 1966-10-26 | 1970-12-01 | Hughes Aircraft Co | Insulated gate field-effect transistor (igfet) with semiconductor gate electrode |
| US3537921A (en) * | 1967-02-28 | 1970-11-03 | Motorola Inc | Selective hydrofluoric acid etching and subsequent processing |
| US3475234A (en) * | 1967-03-27 | 1969-10-28 | Bell Telephone Labor Inc | Method for making mis structures |
| US3576478A (en) * | 1969-07-22 | 1971-04-27 | Philco Ford Corp | Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode |
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1970
- 1970-10-30 JP JP45095083A patent/JPS4929785B1/ja active Pending
-
1971
- 1971-10-29 US US00193854A patent/US3850708A/en not_active Expired - Lifetime
- 1971-10-29 DE DE19712154120 patent/DE2154120A1/de active Pending
- 1971-10-29 NL NL7114918A patent/NL7114918A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL7114918A (enExample) | 1972-05-03 |
| US3850708A (en) | 1974-11-26 |
| DE2154120A1 (de) | 1972-06-29 |