CA1008973A - Method of mos circuit fabrication - Google Patents

Method of mos circuit fabrication

Info

Publication number
CA1008973A
CA1008973A CA222,368A CA222368A CA1008973A CA 1008973 A CA1008973 A CA 1008973A CA 222368 A CA222368 A CA 222368A CA 1008973 A CA1008973 A CA 1008973A
Authority
CA
Canada
Prior art keywords
circuit fabrication
mos circuit
mos
fabrication
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA222,368A
Other languages
English (en)
Inventor
Robert L. Luce
Joseph P. Perry
James D. Sansbury
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Application granted granted Critical
Publication of CA1008973A publication Critical patent/CA1008973A/en
Expired legal-status Critical Current

Links

Classifications

    • H10W20/40—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10W74/43—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/919—Compensation doping
CA222,368A 1974-05-03 1975-03-18 Method of mos circuit fabrication Expired CA1008973A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US466566A US3912558A (en) 1974-05-03 1974-05-03 Method of MOS circuit fabrication

Publications (1)

Publication Number Publication Date
CA1008973A true CA1008973A (en) 1977-04-19

Family

ID=23852254

Family Applications (1)

Application Number Title Priority Date Filing Date
CA222,368A Expired CA1008973A (en) 1974-05-03 1975-03-18 Method of mos circuit fabrication

Country Status (6)

Country Link
US (1) US3912558A (enExample)
JP (1) JPS5543631B2 (enExample)
CA (1) CA1008973A (enExample)
DE (1) DE2516393A1 (enExample)
FR (1) FR2269792A1 (enExample)
GB (1) GB1494708A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4030952A (en) * 1974-04-18 1977-06-21 Fairchild Camera And Instrument Corporation Method of MOS circuit fabrication
US4097314A (en) * 1976-12-30 1978-06-27 Rca Corp. Method of making a sapphire gate transistor
JPS53115173A (en) * 1977-03-18 1978-10-07 Hitachi Ltd Production of semiconductor device
JPS5492175A (en) * 1977-12-29 1979-07-21 Fujitsu Ltd Manufacture of semiconductor device
US4542037A (en) * 1980-04-28 1985-09-17 Fairchild Camera And Instrument Corporation Laser induced flow of glass bonded materials
CA1174285A (en) * 1980-04-28 1984-09-11 Michelangelo Delfino Laser induced flow of integrated circuit structure materials
JP2565317B2 (ja) * 1986-12-03 1996-12-18 富士通株式会社 半導体装置の製造方法
JP3123937B2 (ja) * 1996-11-26 2001-01-15 日本電気株式会社 半導体装置およびその製造方法
US9701629B2 (en) 2000-12-08 2017-07-11 Sony Deutschland Gmbh Use of dithiocarbamate esters and bis-dithiocarbamate esters in the preparation of organic-inorganic nanocomposites
EP1215205B1 (en) 2000-12-08 2007-11-21 Sony Deutschland GmbH Tuned multifunctional linker molecules for electronic charge transport through organic-inorganic composite structures and use thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3476619A (en) * 1966-09-13 1969-11-04 Motorola Inc Semiconductor device stabilization
DE2040180B2 (de) * 1970-01-22 1977-08-25 Intel Corp, Mountain View, Calif. (V.St.A.) Verfahren zur verhinderung von mechanischen bruechen einer duennen, die oberflaeche eines halbleiterkoerpers ueberdeckende isolierschichten ueberziehenden elektrisch leitenden schicht
US3756876A (en) * 1970-10-27 1973-09-04 Cogar Corp Fabrication process for field effect and bipolar transistor devices
JPS4929785B1 (enExample) * 1970-10-30 1974-08-07

Also Published As

Publication number Publication date
DE2516393A1 (de) 1975-11-13
FR2269792A1 (enExample) 1975-11-28
JPS50142174A (enExample) 1975-11-15
US3912558A (en) 1975-10-14
GB1494708A (en) 1977-12-14
JPS5543631B2 (enExample) 1980-11-07

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