DE2508651C3 - Verfahren zur Herstellung eines ununterbrochenen kristallinen Bandes - Google Patents

Verfahren zur Herstellung eines ununterbrochenen kristallinen Bandes

Info

Publication number
DE2508651C3
DE2508651C3 DE2508651A DE2508651A DE2508651C3 DE 2508651 C3 DE2508651 C3 DE 2508651C3 DE 2508651 A DE2508651 A DE 2508651A DE 2508651 A DE2508651 A DE 2508651A DE 2508651 C3 DE2508651 C3 DE 2508651C3
Authority
DE
Germany
Prior art keywords
silicon
melt
crystal
seed crystal
shaped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2508651A
Other languages
German (de)
English (en)
Other versions
DE2508651A1 (de
DE2508651B2 (de
Inventor
Jean Jacques Lucien Emile Maisons-Alfort Val De Marne Brissot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE2508651A1 publication Critical patent/DE2508651A1/de
Publication of DE2508651B2 publication Critical patent/DE2508651B2/de
Application granted granted Critical
Publication of DE2508651C3 publication Critical patent/DE2508651C3/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/10—Solid or liquid components, e.g. Verneuil method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE2508651A 1974-03-01 1975-02-28 Verfahren zur Herstellung eines ununterbrochenen kristallinen Bandes Expired DE2508651C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7407044A FR2262554B1 (US07655688-20100202-C00086.png) 1974-03-01 1974-03-01

Publications (3)

Publication Number Publication Date
DE2508651A1 DE2508651A1 (de) 1975-09-25
DE2508651B2 DE2508651B2 (de) 1980-09-18
DE2508651C3 true DE2508651C3 (de) 1981-09-17

Family

ID=9135672

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2508651A Expired DE2508651C3 (de) 1974-03-01 1975-02-28 Verfahren zur Herstellung eines ununterbrochenen kristallinen Bandes

Country Status (8)

Country Link
JP (1) JPS5443997B2 (US07655688-20100202-C00086.png)
BE (1) BE826094A (US07655688-20100202-C00086.png)
DE (1) DE2508651C3 (US07655688-20100202-C00086.png)
DK (1) DK152059C (US07655688-20100202-C00086.png)
FR (1) FR2262554B1 (US07655688-20100202-C00086.png)
GB (1) GB1490114A (US07655688-20100202-C00086.png)
IT (1) IT1033277B (US07655688-20100202-C00086.png)
NL (1) NL7502202A (US07655688-20100202-C00086.png)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4102767A (en) * 1977-04-14 1978-07-25 Westinghouse Electric Corp. Arc heater method for the production of single crystal silicon
US4225378A (en) * 1978-12-27 1980-09-30 Burroughs Corporation Extrusion mold and method for growing monocrystalline structures
DE3366718D1 (en) * 1983-02-09 1986-11-13 Commissariat Energie Atomique Method of producing plates of metallic or semiconducting material by moulding without direct contact with the walls of the mould
JP3875314B2 (ja) * 1996-07-29 2007-01-31 日本碍子株式会社 シリコン結晶プレートの育成方法、シリコン結晶プレートの育成装置、シリコン結晶プレートおよび太陽電池素子の製造方法
US10960659B2 (en) 2014-07-02 2021-03-30 Rotoprint Sovrastampa S.R.L. System and method for overprinting on packages and/or containers of different formats

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7004876A (US07655688-20100202-C00086.png) * 1970-04-04 1971-10-06
US3759671A (en) * 1971-10-15 1973-09-18 Gen Motors Corp Horizontal growth of crystal ribbons

Also Published As

Publication number Publication date
IT1033277B (it) 1979-07-10
FR2262554B1 (US07655688-20100202-C00086.png) 1977-06-17
NL7502202A (nl) 1975-09-03
DE2508651A1 (de) 1975-09-25
JPS50126164A (US07655688-20100202-C00086.png) 1975-10-03
GB1490114A (en) 1977-10-26
DK152059B (da) 1988-01-25
FR2262554A1 (US07655688-20100202-C00086.png) 1975-09-26
JPS5443997B2 (US07655688-20100202-C00086.png) 1979-12-22
DK152059C (da) 1988-07-11
BE826094A (nl) 1975-08-27
DK76775A (US07655688-20100202-C00086.png) 1975-11-03
DE2508651B2 (de) 1980-09-18

Similar Documents

Publication Publication Date Title
DE1667657C3 (de) Verfahren zur Herstellung von Siliciumkarbidwhiskers
DE60038095T2 (de) Verfahren zur Herstellung einer trägerfreien Kristallschicht
DE2654063A1 (de) Verfahren zum herstellen eines bandes aus polykristallinem halbleitermaterial
DE2925679A1 (de) Verfahren zur herstellung von siliciumstaeben
DE2745335A1 (de) Vorrichtung zum ziehen von einkristallinem silizium
DE1291320B (de) Verfahren zum Ziehen dendritischer Kristalle
DE1901331C3 (de) Verfahren zum Herstellen eines Verbindungskristalls
DE1034772B (de) Verfahren zum Ziehen von spannungsfreien Einkristallen fast konstanter Aktivatorkonzentration aus einer Halbleiterschmelze
DE1665250C2 (de) Supraleiter und Verfahren sowie Vorrichtung zu seiner Herstellung
DE3325242C2 (de) Verfahren und Vorrichtung zum Ziehen eines Verbindungshalbleiter-Einkristalls
DE3111657C2 (de) Verfahren zur Herstellung von Magnetschichten auf Substraten mit Granatstruktur
DE2508651C3 (de) Verfahren zur Herstellung eines ununterbrochenen kristallinen Bandes
DE1901752A1 (de) Verfahren zur Herstellung eines Einkristalles in einem nichtmonokristallinem Substrat
DE1533475B1 (de) Verfahren zur Herstellung parallel zueinander ausgerichteter Stengelkristalle
DE3017016A1 (de) Verfahren und vorrichtung zur herstellung von monokristallinem silicium in bandform
DE69312582T2 (de) Verfahren zur Herstellung eines Metalloxid-Kristalls
DE1544338A1 (de) Zuechtung von Lithiumniobat-Kristallen
DE2635373C2 (de) Verfahren und Vorrichtung zur kontinuierlichen Züchtung von Einkristallen bestimmter Form
DE102012218229A1 (de) Verfahren zum Herstellen eines Silizium-Einkristall-Keims und eines Silizium-Wafers, Silizium-Wafer und Silizium-Solarzelle
DE69707374T2 (de) Verfahren und Vorrichtung zur Züchtung von Siliciumkristallen in Plattenformen für Solarzellen
DE2535160C3 (de) Vorrichtung zum epitaktischen Züchten einer Kristallschicht auf einem Halbleitersubstrat
DE68912686T2 (de) Verfahren zur Herstellung eines Einkristalls aus einer Halbleiter-Verbindung.
DE1644009B2 (de) Verfahren zum Herstellen stabförmiger Siliciumeinkristalle mit homogener Antimondotierung
DE1419738A1 (de) Verfahren zum Zuechten von duennen,flachen dendritischen Einkristallen
DE2649201C2 (de) Verfahren zum Herstellen von einkristallinen Halbleitermaterialbändern durch senkrechtes Ziehen aus einem Schmelzfilm unter Verwendung eines Formgebungsteils

Legal Events

Date Code Title Description
OD Request for examination
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee