DE2460688A1 - Verfahren zur herstellung von versetzungsfreiem halbleitermaterial - Google Patents
Verfahren zur herstellung von versetzungsfreiem halbleitermaterialInfo
- Publication number
- DE2460688A1 DE2460688A1 DE19742460688 DE2460688A DE2460688A1 DE 2460688 A1 DE2460688 A1 DE 2460688A1 DE 19742460688 DE19742460688 DE 19742460688 DE 2460688 A DE2460688 A DE 2460688A DE 2460688 A1 DE2460688 A1 DE 2460688A1
- Authority
- DE
- Germany
- Prior art keywords
- seed crystal
- rod
- crystal
- single crystal
- semiconductor material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 23
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 239000000463 material Substances 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000013078 crystal Substances 0.000 claims description 49
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 230000006698 induction Effects 0.000 claims description 4
- 238000004857 zone melting Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19742460688 DE2460688A1 (de) | 1974-12-20 | 1974-12-20 | Verfahren zur herstellung von versetzungsfreiem halbleitermaterial |
| NL7512297A NL7512297A (nl) | 1974-12-20 | 1975-10-20 | Werkwijze voor de vervaardiging van halfgeleider- materiaal zonder kristalstruktuurfouten. |
| IT5273075A IT1052779B (it) | 1974-12-20 | 1975-12-17 | Procedimento per produrre materiale semiconduttore esente da dislocazione |
| BE162874A BE836800A (fr) | 1974-12-20 | 1975-12-18 | Procede de preparation de monocristaux d'un materiau semi-conducteur |
| JP50151703A JPS5188172A (enrdf_load_stackoverflow) | 1974-12-20 | 1975-12-19 | |
| FR7539005A FR2294746A1 (fr) | 1974-12-20 | 1975-12-19 | Procede de preparation de monocristaux d'un materiau semi-conducteur |
| DK580575A DK580575A (da) | 1974-12-20 | 1975-12-19 | Fremgangsmade til fremstilling af dislokationsfrit halvledermateriale |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19742460688 DE2460688A1 (de) | 1974-12-20 | 1974-12-20 | Verfahren zur herstellung von versetzungsfreiem halbleitermaterial |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2460688A1 true DE2460688A1 (de) | 1976-07-01 |
Family
ID=5934145
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19742460688 Pending DE2460688A1 (de) | 1974-12-20 | 1974-12-20 | Verfahren zur herstellung von versetzungsfreiem halbleitermaterial |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5188172A (enrdf_load_stackoverflow) |
| BE (1) | BE836800A (enrdf_load_stackoverflow) |
| DE (1) | DE2460688A1 (enrdf_load_stackoverflow) |
| DK (1) | DK580575A (enrdf_load_stackoverflow) |
| FR (1) | FR2294746A1 (enrdf_load_stackoverflow) |
| IT (1) | IT1052779B (enrdf_load_stackoverflow) |
| NL (1) | NL7512297A (enrdf_load_stackoverflow) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5241721B2 (enrdf_load_stackoverflow) * | 1972-09-09 | 1977-10-20 |
-
1974
- 1974-12-20 DE DE19742460688 patent/DE2460688A1/de active Pending
-
1975
- 1975-10-20 NL NL7512297A patent/NL7512297A/xx unknown
- 1975-12-17 IT IT5273075A patent/IT1052779B/it active
- 1975-12-18 BE BE162874A patent/BE836800A/xx unknown
- 1975-12-19 JP JP50151703A patent/JPS5188172A/ja active Pending
- 1975-12-19 FR FR7539005A patent/FR2294746A1/fr active Granted
- 1975-12-19 DK DK580575A patent/DK580575A/da not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| BE836800A (fr) | 1976-06-18 |
| FR2294746B1 (enrdf_load_stackoverflow) | 1978-05-19 |
| JPS5188172A (enrdf_load_stackoverflow) | 1976-08-02 |
| FR2294746A1 (fr) | 1976-07-16 |
| NL7512297A (nl) | 1976-06-22 |
| DK580575A (da) | 1976-06-21 |
| IT1052779B (it) | 1981-07-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHB | Non-payment of the publication fee (examined application) |