DE2447867A1 - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
DE2447867A1
DE2447867A1 DE19742447867 DE2447867A DE2447867A1 DE 2447867 A1 DE2447867 A1 DE 2447867A1 DE 19742447867 DE19742447867 DE 19742447867 DE 2447867 A DE2447867 A DE 2447867A DE 2447867 A1 DE2447867 A1 DE 2447867A1
Authority
DE
Germany
Prior art keywords
zone
base
collector
resistance
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19742447867
Other languages
German (de)
English (en)
Inventor
Heinz Walter Ruegg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE2447867A1 publication Critical patent/DE2447867A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
DE19742447867 1973-10-20 1974-10-08 Halbleiteranordnung Withdrawn DE2447867A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7314466A NL7314466A (nl) 1973-10-20 1973-10-20 Halfgeleiderinrichting.

Publications (1)

Publication Number Publication Date
DE2447867A1 true DE2447867A1 (de) 1975-04-30

Family

ID=19819856

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19742447867 Withdrawn DE2447867A1 (de) 1973-10-20 1974-10-08 Halbleiteranordnung

Country Status (6)

Country Link
JP (1) JPS5513427B2 (nl)
CH (1) CH573664A5 (nl)
DE (1) DE2447867A1 (nl)
FR (1) FR2248615B1 (nl)
GB (1) GB1480050A (nl)
NL (1) NL7314466A (nl)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2805008A1 (de) * 1978-02-06 1979-08-09 Siemens Ag Hochfrequenztransistor
DE10044838A1 (de) * 2000-09-11 2002-04-04 Infineon Technologies Ag Halbleiterbauelement

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4199775A (en) * 1974-09-03 1980-04-22 Bell Telephone Laboratories, Incorporated Integrated circuit and method for fabrication thereof
DE10250204B8 (de) 2002-10-28 2008-09-11 Infineon Technologies Ag Verfahren zur Herstellung von Kollektorbereichen einer Transistorstruktur
CA2971561C (en) 2015-01-26 2020-07-21 Nippon Steel & Sumitomo Metal Corporation A method for press forming a metal workpiece with controlled wrinkling

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2805008A1 (de) * 1978-02-06 1979-08-09 Siemens Ag Hochfrequenztransistor
DE10044838A1 (de) * 2000-09-11 2002-04-04 Infineon Technologies Ag Halbleiterbauelement
DE10044838C2 (de) * 2000-09-11 2002-08-08 Infineon Technologies Ag Halbleiterbauelement und Verfahren zur Herstellung eines solchen
US6806555B2 (en) 2000-09-11 2004-10-19 Infineon Technologies Ag Semiconductor component and method for fabricating it

Also Published As

Publication number Publication date
JPS5513427B2 (nl) 1980-04-09
JPS5068783A (nl) 1975-06-09
FR2248615B1 (nl) 1979-02-16
NL7314466A (nl) 1975-04-22
CH573664A5 (nl) 1976-03-15
FR2248615A1 (nl) 1975-05-16
GB1480050A (en) 1977-07-20

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Legal Events

Date Code Title Description
OD Request for examination
8130 Withdrawal