DE2440080A1 - Verfahren zur aetzung von halbleiteraktivteilen und vorrichtung zur ausfuehrung des verfahrens - Google Patents
Verfahren zur aetzung von halbleiteraktivteilen und vorrichtung zur ausfuehrung des verfahrensInfo
- Publication number
- DE2440080A1 DE2440080A1 DE2440080A DE2440080A DE2440080A1 DE 2440080 A1 DE2440080 A1 DE 2440080A1 DE 2440080 A DE2440080 A DE 2440080A DE 2440080 A DE2440080 A DE 2440080A DE 2440080 A1 DE2440080 A1 DE 2440080A1
- Authority
- DE
- Germany
- Prior art keywords
- template
- spacers
- pressure
- etching
- active parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
- H10P72/12—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
- H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
- H10P72/12—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H10P72/123—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterised by a material, a roughness, a coating or the like
Landscapes
- Weting (AREA)
- Detergent Compositions (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH903374A CH573663A5 (enExample) | 1974-07-02 | 1974-07-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2440080A1 true DE2440080A1 (de) | 1976-01-22 |
Family
ID=4347579
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2440080A Withdrawn DE2440080A1 (de) | 1974-07-02 | 1974-08-21 | Verfahren zur aetzung von halbleiteraktivteilen und vorrichtung zur ausfuehrung des verfahrens |
| DE19747428330U Expired DE7428330U (de) | 1974-07-02 | 1974-08-21 | Vorrichtung zur aetzung von halbleiteraktivteilen |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19747428330U Expired DE7428330U (de) | 1974-07-02 | 1974-08-21 | Vorrichtung zur aetzung von halbleiteraktivteilen |
Country Status (2)
| Country | Link |
|---|---|
| CH (1) | CH573663A5 (enExample) |
| DE (2) | DE2440080A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2589886A1 (fr) * | 1985-09-26 | 1987-05-15 | Nat Semiconductor Corp | Systeme pour la galvanoplastie de dispositifs semi-conducteurs moules |
| WO2024235541A1 (de) * | 2023-05-16 | 2024-11-21 | Singulus Technologies Ag | Carrier für die kantenpassivierung |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3743044A1 (de) * | 1987-12-18 | 1989-06-29 | Semikron Elektronik Gmbh | Verfahren zum herstellen von halbleiterbauelementen |
-
1974
- 1974-07-02 CH CH903374A patent/CH573663A5/de not_active IP Right Cessation
- 1974-08-21 DE DE2440080A patent/DE2440080A1/de not_active Withdrawn
- 1974-08-21 DE DE19747428330U patent/DE7428330U/de not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2589886A1 (fr) * | 1985-09-26 | 1987-05-15 | Nat Semiconductor Corp | Systeme pour la galvanoplastie de dispositifs semi-conducteurs moules |
| WO2024235541A1 (de) * | 2023-05-16 | 2024-11-21 | Singulus Technologies Ag | Carrier für die kantenpassivierung |
Also Published As
| Publication number | Publication date |
|---|---|
| DE7428330U (de) | 1976-05-06 |
| CH573663A5 (enExample) | 1976-03-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OF | Willingness to grant licences before publication of examined application | ||
| 8141 | Disposal/no request for examination |