DE2439408A1 - Halbleiterbauelement - Google Patents

Halbleiterbauelement

Info

Publication number
DE2439408A1
DE2439408A1 DE2439408A DE2439408A DE2439408A1 DE 2439408 A1 DE2439408 A1 DE 2439408A1 DE 2439408 A DE2439408 A DE 2439408A DE 2439408 A DE2439408 A DE 2439408A DE 2439408 A1 DE2439408 A1 DE 2439408A1
Authority
DE
Germany
Prior art keywords
emitter
zone
electrode
transistor according
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE2439408A
Other languages
German (de)
English (en)
Inventor
Andreas Dipl Phys Glasl
Helmuth Dipl Phys Dr Murrmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DE2439408A priority Critical patent/DE2439408A1/de
Priority to GB26264/75A priority patent/GB1494802A/en
Priority to ZA00754328A priority patent/ZA754328B/xx
Priority to AT0546075A priority patent/AT372805B/de
Priority to IT26108/75A priority patent/IT1040480B/it
Priority to FR7524515A priority patent/FR2282166A1/fr
Priority to CA233,056A priority patent/CA1041673A/en
Priority to BR7505197*A priority patent/BR7505197A/pt
Priority to JP50099451A priority patent/JPS5164370A/ja
Publication of DE2439408A1 publication Critical patent/DE2439408A1/de
Priority to US05/811,267 priority patent/US4109273A/en
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/0112Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
DE2439408A 1974-08-16 1974-08-16 Halbleiterbauelement Ceased DE2439408A1 (de)

Priority Applications (10)

Application Number Priority Date Filing Date Title
DE2439408A DE2439408A1 (de) 1974-08-16 1974-08-16 Halbleiterbauelement
GB26264/75A GB1494802A (en) 1974-08-16 1975-06-20 Bipolar transistors
ZA00754328A ZA754328B (en) 1974-08-16 1975-07-07 Improvements in or relating to semiconductor components
AT0546075A AT372805B (de) 1974-08-16 1975-07-15 Verfahren zur herstellung der emitterzone eines planartransistors
IT26108/75A IT1040480B (it) 1974-08-16 1975-08-05 Componente a semiconduttori specialmente per un circuito integrato
FR7524515A FR2282166A1 (fr) 1974-08-16 1975-08-06 Composant a semiconducteurs
CA233,056A CA1041673A (en) 1974-08-16 1975-08-07 Transistor
BR7505197*A BR7505197A (pt) 1974-08-16 1975-08-14 Elemento semi-condutor aperfeicoado
JP50099451A JPS5164370A (enrdf_load_stackoverflow) 1974-08-16 1975-08-15
US05/811,267 US4109273A (en) 1974-08-16 1977-06-29 Contact electrode for semiconductor component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2439408A DE2439408A1 (de) 1974-08-16 1974-08-16 Halbleiterbauelement

Publications (1)

Publication Number Publication Date
DE2439408A1 true DE2439408A1 (de) 1976-02-26

Family

ID=5923395

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2439408A Ceased DE2439408A1 (de) 1974-08-16 1974-08-16 Halbleiterbauelement

Country Status (9)

Country Link
JP (1) JPS5164370A (enrdf_load_stackoverflow)
AT (1) AT372805B (enrdf_load_stackoverflow)
BR (1) BR7505197A (enrdf_load_stackoverflow)
CA (1) CA1041673A (enrdf_load_stackoverflow)
DE (1) DE2439408A1 (enrdf_load_stackoverflow)
FR (1) FR2282166A1 (enrdf_load_stackoverflow)
GB (1) GB1494802A (enrdf_load_stackoverflow)
IT (1) IT1040480B (enrdf_load_stackoverflow)
ZA (1) ZA754328B (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61224448A (ja) * 1985-03-29 1986-10-06 Toshiba Corp 半導体装置の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4855663A (enrdf_load_stackoverflow) * 1971-11-10 1973-08-04
JPS499186A (enrdf_load_stackoverflow) * 1972-05-11 1974-01-26

Also Published As

Publication number Publication date
ATA546075A (de) 1983-03-15
ZA754328B (en) 1976-06-30
AT372805B (de) 1983-11-25
FR2282166A1 (fr) 1976-03-12
JPS5164370A (enrdf_load_stackoverflow) 1976-06-03
IT1040480B (it) 1979-12-20
CA1041673A (en) 1978-10-31
BR7505197A (pt) 1976-08-03
GB1494802A (en) 1977-12-14
FR2282166B1 (enrdf_load_stackoverflow) 1980-10-17

Similar Documents

Publication Publication Date Title
DE69625815T2 (de) Durchbruchtransierter niederspannungs-unterdrücker mit zweischichtiger basis
DE68911715T2 (de) Dünnfilm-Transistor zum Betrieb für hohe Spannungen und dessen Herstellungsverfahren.
DE69430724T2 (de) Dielektrisch isolierte Halbleiteranordnung
DE2823967C2 (enrdf_load_stackoverflow)
DE3903284A1 (de) Bipolartransistor
EP0071665B1 (de) Verfahren zum Herstellen einer monolithisch integrierten Festkörperschaltung mit mindestens einem bipolaren Planartransistor
DE2744059A1 (de) Verfahren zur gemeinsamen integrierten herstellung von feldeffekt- und bipolar-transistoren
DE2048945A1 (de) Verfahren zur Herstellung integrier ter Schaltungen
DE2133184A1 (de) Verfahren zum Herstellen von Halbleiterbauteilen
DE2704647A1 (de) Widerstand mit gesteuert einstellbarer groesse
DE2728845C2 (enrdf_load_stackoverflow)
DE2429957C3 (enrdf_load_stackoverflow)
DE3851815T2 (de) Feldeffekttransistor und dessen Herstellungsmethode.
DE2048737A1 (de) Verfahren zur Herstellung integrierter Transistoren
EP0062883B1 (de) Verfahren zur Herstellung eines integrierten bipolaren Planartransistors
DE10044838C2 (de) Halbleiterbauelement und Verfahren zur Herstellung eines solchen
DE60120897T2 (de) Herstellung eines CMOS-Kondensators
DE69225355T2 (de) Transistor mit einer vorbestimmten Stromverstärkung in einer integrierten Bipolarschaltung
DE2507038C3 (de) Inverser Planartransistor und Verfahren zu seiner Herstellung
DE2219696C3 (de) Verfarhen zum Herstellen einer monolithisch integrierten Halbleiteranordnung
DE2600375C3 (de) Halbleiteranordnung mit mindestens zwei komplementären Transistoren und Verfahren zu ihrer Herstellung
DE1802849B2 (de) Verfahren zum herstellen einer monolithischen schaltung
DE2403816C3 (de) Halbleiteranordnung und Verfahren zu ihrer Herstellung
DE2439408A1 (de) Halbleiterbauelement
DE6802215U (de) Halbleiterbauelement.

Legal Events

Date Code Title Description
8131 Rejection