CA1041673A - Transistor - Google Patents
TransistorInfo
- Publication number
- CA1041673A CA1041673A CA233,056A CA233056A CA1041673A CA 1041673 A CA1041673 A CA 1041673A CA 233056 A CA233056 A CA 233056A CA 1041673 A CA1041673 A CA 1041673A
- Authority
- CA
- Canada
- Prior art keywords
- emitter
- zone
- transistor
- base
- emitter zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 6
- 238000009792 diffusion process Methods 0.000 claims abstract description 5
- 238000005468 ion implantation Methods 0.000 claims abstract description 3
- 230000035515 penetration Effects 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000000969 carrier Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 11
- 230000010354 integration Effects 0.000 abstract description 3
- 239000000306 component Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000003321 amplification Effects 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 241000429017 Pectis Species 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002674 ointment Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2439408A DE2439408A1 (de) | 1974-08-16 | 1974-08-16 | Halbleiterbauelement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1041673A true CA1041673A (en) | 1978-10-31 |
Family
ID=5923395
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA233,056A Expired CA1041673A (en) | 1974-08-16 | 1975-08-07 | Transistor |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS5164370A (enrdf_load_stackoverflow) |
| AT (1) | AT372805B (enrdf_load_stackoverflow) |
| BR (1) | BR7505197A (enrdf_load_stackoverflow) |
| CA (1) | CA1041673A (enrdf_load_stackoverflow) |
| DE (1) | DE2439408A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2282166A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1494802A (enrdf_load_stackoverflow) |
| IT (1) | IT1040480B (enrdf_load_stackoverflow) |
| ZA (1) | ZA754328B (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61224448A (ja) * | 1985-03-29 | 1986-10-06 | Toshiba Corp | 半導体装置の製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4855663A (enrdf_load_stackoverflow) * | 1971-11-10 | 1973-08-04 | ||
| JPS499186A (enrdf_load_stackoverflow) * | 1972-05-11 | 1974-01-26 |
-
1974
- 1974-08-16 DE DE2439408A patent/DE2439408A1/de not_active Ceased
-
1975
- 1975-06-20 GB GB26264/75A patent/GB1494802A/en not_active Expired
- 1975-07-07 ZA ZA00754328A patent/ZA754328B/xx unknown
- 1975-07-15 AT AT0546075A patent/AT372805B/de not_active IP Right Cessation
- 1975-08-05 IT IT26108/75A patent/IT1040480B/it active
- 1975-08-06 FR FR7524515A patent/FR2282166A1/fr active Granted
- 1975-08-07 CA CA233,056A patent/CA1041673A/en not_active Expired
- 1975-08-14 BR BR7505197*A patent/BR7505197A/pt unknown
- 1975-08-15 JP JP50099451A patent/JPS5164370A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2439408A1 (de) | 1976-02-26 |
| ATA546075A (de) | 1983-03-15 |
| ZA754328B (en) | 1976-06-30 |
| AT372805B (de) | 1983-11-25 |
| FR2282166A1 (fr) | 1976-03-12 |
| JPS5164370A (enrdf_load_stackoverflow) | 1976-06-03 |
| IT1040480B (it) | 1979-12-20 |
| BR7505197A (pt) | 1976-08-03 |
| GB1494802A (en) | 1977-12-14 |
| FR2282166B1 (enrdf_load_stackoverflow) | 1980-10-17 |
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