AT372805B - Verfahren zur herstellung der emitterzone eines planartransistors - Google Patents

Verfahren zur herstellung der emitterzone eines planartransistors

Info

Publication number
AT372805B
AT372805B AT0546075A AT546075A AT372805B AT 372805 B AT372805 B AT 372805B AT 0546075 A AT0546075 A AT 0546075A AT 546075 A AT546075 A AT 546075A AT 372805 B AT372805 B AT 372805B
Authority
AT
Austria
Prior art keywords
producing
planar transistor
emitter zone
emitter
zone
Prior art date
Application number
AT0546075A
Other languages
German (de)
English (en)
Other versions
ATA546075A (de
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of ATA546075A publication Critical patent/ATA546075A/de
Application granted granted Critical
Publication of AT372805B publication Critical patent/AT372805B/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/0112Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
AT0546075A 1974-08-16 1975-07-15 Verfahren zur herstellung der emitterzone eines planartransistors AT372805B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2439408A DE2439408A1 (de) 1974-08-16 1974-08-16 Halbleiterbauelement

Publications (2)

Publication Number Publication Date
ATA546075A ATA546075A (de) 1983-03-15
AT372805B true AT372805B (de) 1983-11-25

Family

ID=5923395

Family Applications (1)

Application Number Title Priority Date Filing Date
AT0546075A AT372805B (de) 1974-08-16 1975-07-15 Verfahren zur herstellung der emitterzone eines planartransistors

Country Status (9)

Country Link
JP (1) JPS5164370A (enrdf_load_stackoverflow)
AT (1) AT372805B (enrdf_load_stackoverflow)
BR (1) BR7505197A (enrdf_load_stackoverflow)
CA (1) CA1041673A (enrdf_load_stackoverflow)
DE (1) DE2439408A1 (enrdf_load_stackoverflow)
FR (1) FR2282166A1 (enrdf_load_stackoverflow)
GB (1) GB1494802A (enrdf_load_stackoverflow)
IT (1) IT1040480B (enrdf_load_stackoverflow)
ZA (1) ZA754328B (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61224448A (ja) * 1985-03-29 1986-10-06 Toshiba Corp 半導体装置の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4855663A (enrdf_load_stackoverflow) * 1971-11-10 1973-08-04
JPS499186A (enrdf_load_stackoverflow) * 1972-05-11 1974-01-26

Also Published As

Publication number Publication date
DE2439408A1 (de) 1976-02-26
ATA546075A (de) 1983-03-15
ZA754328B (en) 1976-06-30
FR2282166A1 (fr) 1976-03-12
JPS5164370A (enrdf_load_stackoverflow) 1976-06-03
IT1040480B (it) 1979-12-20
CA1041673A (en) 1978-10-31
BR7505197A (pt) 1976-08-03
GB1494802A (en) 1977-12-14
FR2282166B1 (enrdf_load_stackoverflow) 1980-10-17

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee