DE2432099B2 - Speichermatrix - Google Patents
SpeichermatrixInfo
- Publication number
- DE2432099B2 DE2432099B2 DE2432099A DE2432099A DE2432099B2 DE 2432099 B2 DE2432099 B2 DE 2432099B2 DE 2432099 A DE2432099 A DE 2432099A DE 2432099 A DE2432099 A DE 2432099A DE 2432099 B2 DE2432099 B2 DE 2432099B2
- Authority
- DE
- Germany
- Prior art keywords
- transistor
- transistors
- memory
- zone
- matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011159 matrix material Substances 0.000 title claims description 73
- 239000004065 semiconductor Substances 0.000 claims description 28
- 239000002344 surface layer Substances 0.000 claims description 10
- 210000004027 cell Anatomy 0.000 description 111
- 239000010410 layer Substances 0.000 description 48
- 239000004020 conductor Substances 0.000 description 36
- 239000000758 substrate Substances 0.000 description 6
- 238000000926 separation method Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 210000000352 storage cell Anatomy 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000009933 burial Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
- H03K19/091—Integrated injection logic or merged transistor logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/012—Modifications of generator to improve response time or to decrease power consumption
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
- H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
- H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
- H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
- H03K3/289—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable of the primary-secondary type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/10—SRAM devices comprising bipolar components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/211—Design considerations for internal polarisation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7309453A NL7309453A (nl) | 1973-07-06 | 1973-07-06 | Geheugenmatrix. |
| NL7408502A NL7408502A (nl) | 1973-07-06 | 1974-06-25 | Geheugenmatrix. |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2432099A1 DE2432099A1 (de) | 1975-02-20 |
| DE2432099B2 true DE2432099B2 (de) | 1978-05-24 |
| DE2432099C3 DE2432099C3 (Direct) | 1979-02-08 |
Family
ID=26644895
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2432099A Granted DE2432099B2 (de) | 1973-07-06 | 1974-07-04 | Speichermatrix |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS5516354B2 (Direct) |
| AT (1) | AT344424B (Direct) |
| CH (1) | CH585948A5 (Direct) |
| DE (1) | DE2432099B2 (Direct) |
| FR (1) | FR2236248B1 (Direct) |
| GB (1) | GB1480138A (Direct) |
| IT (1) | IT1014450B (Direct) |
| NL (1) | NL7408502A (Direct) |
| SE (1) | SE399605B (Direct) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4112511A (en) * | 1977-09-13 | 1978-09-05 | Signetics Corporation | Four transistor static bipolar memory cell using merged transistors |
| US4366554A (en) * | 1978-10-03 | 1982-12-28 | Tokyo Shibaura Denki Kabushiki Kaisha | I2 L Memory device |
| EP0065999B1 (de) * | 1981-05-30 | 1986-05-07 | Ibm Deutschland Gmbh | Hochintegrierter schneller Speicher mit bipolaren Transistoren |
| EP0166043B1 (en) * | 1984-06-25 | 1990-09-19 | International Business Machines Corporation | Mtl storage cell with inherent output multiplex capability |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3643235A (en) * | 1968-12-30 | 1972-02-15 | Ibm | Monolithic semiconductor memory |
-
1974
- 1974-06-25 NL NL7408502A patent/NL7408502A/xx unknown
- 1974-07-03 SE SE7408741A patent/SE399605B/xx not_active Application Discontinuation
- 1974-07-03 IT IT69116/74A patent/IT1014450B/it active
- 1974-07-03 GB GB29480/74A patent/GB1480138A/en not_active Expired
- 1974-07-03 CH CH911974A patent/CH585948A5/xx not_active IP Right Cessation
- 1974-07-04 DE DE2432099A patent/DE2432099B2/de active Granted
- 1974-07-05 AT AT558374A patent/AT344424B/de not_active IP Right Cessation
- 1974-07-05 JP JP7723474A patent/JPS5516354B2/ja not_active Expired
- 1974-07-08 FR FR7423639A patent/FR2236248B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL7408502A (nl) | 1975-12-30 |
| CH585948A5 (Direct) | 1977-03-15 |
| JPS5516354B2 (Direct) | 1980-05-01 |
| FR2236248B1 (Direct) | 1977-10-07 |
| DE2432099A1 (de) | 1975-02-20 |
| SE399605B (sv) | 1978-02-20 |
| JPS5050832A (Direct) | 1975-05-07 |
| GB1480138A (en) | 1977-07-20 |
| ATA558374A (de) | 1977-11-15 |
| AT344424B (de) | 1978-07-25 |
| IT1014450B (it) | 1977-04-20 |
| DE2432099C3 (Direct) | 1979-02-08 |
| FR2236248A1 (Direct) | 1975-01-31 |
| SE7408741L (Direct) | 1975-01-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |