DE2422653C2 - Integrierte Halbleiteranordnung mit Feldeffekt-Transistoren - Google Patents

Integrierte Halbleiteranordnung mit Feldeffekt-Transistoren

Info

Publication number
DE2422653C2
DE2422653C2 DE2422653A DE2422653A DE2422653C2 DE 2422653 C2 DE2422653 C2 DE 2422653C2 DE 2422653 A DE2422653 A DE 2422653A DE 2422653 A DE2422653 A DE 2422653A DE 2422653 C2 DE2422653 C2 DE 2422653C2
Authority
DE
Germany
Prior art keywords
substrate
voltage
transistor
node
semiconductor arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2422653A
Other languages
German (de)
English (en)
Other versions
DE2422653A1 (de
Inventor
James Minda Lee
George Wappingers Falls N.Y. Sonoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2422653A1 publication Critical patent/DE2422653A1/de
Application granted granted Critical
Publication of DE2422653C2 publication Critical patent/DE2422653C2/de
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is DC
    • G05F3/10Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205Substrate bias-voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Amplifiers (AREA)
  • Static Random-Access Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
DE2422653A 1973-06-29 1974-05-10 Integrierte Halbleiteranordnung mit Feldeffekt-Transistoren Expired DE2422653C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US37527173A 1973-06-29 1973-06-29

Publications (2)

Publication Number Publication Date
DE2422653A1 DE2422653A1 (de) 1975-01-16
DE2422653C2 true DE2422653C2 (de) 1983-03-31

Family

ID=23480213

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2422653A Expired DE2422653C2 (de) 1973-06-29 1974-05-10 Integrierte Halbleiteranordnung mit Feldeffekt-Transistoren

Country Status (14)

Country Link
JP (1) JPS5417541B2 (enrdf_load_stackoverflow)
BE (1) BE815619A (enrdf_load_stackoverflow)
CA (1) CA1033410A (enrdf_load_stackoverflow)
CH (1) CH570705A5 (enrdf_load_stackoverflow)
DD (1) DD114197A5 (enrdf_load_stackoverflow)
DE (1) DE2422653C2 (enrdf_load_stackoverflow)
ES (1) ES427740A1 (enrdf_load_stackoverflow)
FR (1) FR2235417B1 (enrdf_load_stackoverflow)
GB (1) GB1462935A (enrdf_load_stackoverflow)
IL (1) IL45251A (enrdf_load_stackoverflow)
IT (1) IT1012365B (enrdf_load_stackoverflow)
NL (1) NL7408728A (enrdf_load_stackoverflow)
SE (1) SE391996B (enrdf_load_stackoverflow)
SU (1) SU643099A3 (enrdf_load_stackoverflow)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4030084A (en) * 1975-11-28 1977-06-14 Honeywell Information Systems, Inc. Substrate bias voltage generated from refresh oscillator
JPS5327374A (en) * 1976-08-26 1978-03-14 Sharp Corp High voltage drive metal oxide semiconductor device
JPS5482056A (en) * 1977-12-13 1979-06-29 Nec Corp Substrate bias voltage generator circuit
JPS5513566A (en) * 1978-07-17 1980-01-30 Hitachi Ltd Mis field effect semiconductor circuit device
US4229667A (en) * 1978-08-23 1980-10-21 Rockwell International Corporation Voltage boosting substrate bias generator
JPS5559756A (en) * 1978-10-30 1980-05-06 Fujitsu Ltd Semiconductor device
DE2966592D1 (en) * 1979-03-05 1984-03-01 Motorola Inc Substrate bias regulator
JPS55162257A (en) * 1979-06-05 1980-12-17 Fujitsu Ltd Semiconductor element having substrate bias generator circuit
JPS5619676A (en) * 1979-07-26 1981-02-24 Fujitsu Ltd Semiconductor device
JPS56117390A (en) * 1980-02-16 1981-09-14 Fujitsu Ltd Semiconductor memory device
JPS57199335A (en) * 1981-06-02 1982-12-07 Toshiba Corp Generating circuit for substrate bias
US4503465A (en) * 1982-11-24 1985-03-05 Rca Corporation Analog signal comparator using digital circuitry
US4581546A (en) * 1983-11-02 1986-04-08 Inmos Corporation CMOS substrate bias generator having only P channel transistors in the charge pump
US4571505A (en) * 1983-11-16 1986-02-18 Inmos Corporation Method and apparatus of reducing latch-up susceptibility in CMOS integrated circuits
US5039877A (en) * 1990-08-30 1991-08-13 Micron Technology, Inc. Low current substrate bias generator
FR2668668B1 (fr) * 1990-10-30 1994-02-04 Samsung Electronics Co Ltd Generateur de tension de substrat pour un dispositif a semiconducteurs.

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3609414A (en) * 1968-08-20 1971-09-28 Ibm Apparatus for stabilizing field effect transistor thresholds
DE1921131C3 (de) * 1969-04-25 1979-01-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Anordnung zur Temperaturkompensation eines als Regel-Stellglied in Verstärkern angeordneten Feldeffekttransistors
NL7103303A (enrdf_load_stackoverflow) * 1970-03-13 1971-09-15

Also Published As

Publication number Publication date
ES427740A1 (es) 1976-08-01
GB1462935A (en) 1977-01-26
JPS5417541B2 (enrdf_load_stackoverflow) 1979-06-30
SU643099A3 (ru) 1979-01-15
SE391996B (sv) 1977-03-07
IT1012365B (it) 1977-03-10
FR2235417A1 (enrdf_load_stackoverflow) 1975-01-24
SE7407783L (enrdf_load_stackoverflow) 1974-12-30
BE815619A (fr) 1974-09-16
IL45251A0 (en) 1974-12-31
FR2235417B1 (enrdf_load_stackoverflow) 1976-06-25
CA1033410A (en) 1978-06-20
CH570705A5 (enrdf_load_stackoverflow) 1975-12-15
DD114197A5 (enrdf_load_stackoverflow) 1975-07-12
DE2422653A1 (de) 1975-01-16
NL7408728A (enrdf_load_stackoverflow) 1974-12-31
IL45251A (en) 1976-10-31
JPS5024054A (enrdf_load_stackoverflow) 1975-03-14

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Legal Events

Date Code Title Description
8126 Change of the secondary classification

Ipc: G05F 1/46

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee