JPS5024054A - - Google Patents

Info

Publication number
JPS5024054A
JPS5024054A JP49063005A JP6300574A JPS5024054A JP S5024054 A JPS5024054 A JP S5024054A JP 49063005 A JP49063005 A JP 49063005A JP 6300574 A JP6300574 A JP 6300574A JP S5024054 A JPS5024054 A JP S5024054A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49063005A
Other languages
Japanese (ja)
Other versions
JPS5417541B2 (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5024054A publication Critical patent/JPS5024054A/ja
Publication of JPS5417541B2 publication Critical patent/JPS5417541B2/ja
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is DC
    • G05F3/10Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205Substrate bias-voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Amplifiers (AREA)
  • Static Random-Access Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
JP6300574A 1973-06-29 1974-06-05 Expired JPS5417541B2 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US37527173A 1973-06-29 1973-06-29

Publications (2)

Publication Number Publication Date
JPS5024054A true JPS5024054A (enrdf_load_stackoverflow) 1975-03-14
JPS5417541B2 JPS5417541B2 (enrdf_load_stackoverflow) 1979-06-30

Family

ID=23480213

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6300574A Expired JPS5417541B2 (enrdf_load_stackoverflow) 1973-06-29 1974-06-05

Country Status (14)

Country Link
JP (1) JPS5417541B2 (enrdf_load_stackoverflow)
BE (1) BE815619A (enrdf_load_stackoverflow)
CA (1) CA1033410A (enrdf_load_stackoverflow)
CH (1) CH570705A5 (enrdf_load_stackoverflow)
DD (1) DD114197A5 (enrdf_load_stackoverflow)
DE (1) DE2422653C2 (enrdf_load_stackoverflow)
ES (1) ES427740A1 (enrdf_load_stackoverflow)
FR (1) FR2235417B1 (enrdf_load_stackoverflow)
GB (1) GB1462935A (enrdf_load_stackoverflow)
IL (1) IL45251A (enrdf_load_stackoverflow)
IT (1) IT1012365B (enrdf_load_stackoverflow)
NL (1) NL7408728A (enrdf_load_stackoverflow)
SE (1) SE391996B (enrdf_load_stackoverflow)
SU (1) SU643099A3 (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5482056A (en) * 1977-12-13 1979-06-29 Nec Corp Substrate bias voltage generator circuit
JPS5527761A (en) * 1978-07-17 1980-02-28 Hitachi Ltd Oscillation circuit device
WO1980001021A1 (fr) * 1978-10-30 1980-05-15 Fujitsu Ltd Circuit semi-conducteur
WO1980002773A1 (fr) * 1979-06-05 1980-12-11 Fujitsu Ltd Dispositif mos avec un circuit generateur de polarisation d'un substrat
JPS5619676A (en) * 1979-07-26 1981-02-24 Fujitsu Ltd Semiconductor device
US4471290A (en) * 1981-06-02 1984-09-11 Tokyo Shibaura Denki Kabushiki Kaisha Substrate bias generating circuit
JPS60117655A (ja) * 1983-11-16 1985-06-25 インモス、コーポレーシヨン 基板上のcmos回路のラッチアップ制御方法および装置

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4030084A (en) * 1975-11-28 1977-06-14 Honeywell Information Systems, Inc. Substrate bias voltage generated from refresh oscillator
JPS5327374A (en) * 1976-08-26 1978-03-14 Sharp Corp High voltage drive metal oxide semiconductor device
US4229667A (en) * 1978-08-23 1980-10-21 Rockwell International Corporation Voltage boosting substrate bias generator
DE2966592D1 (en) * 1979-03-05 1984-03-01 Motorola Inc Substrate bias regulator
JPS56117390A (en) * 1980-02-16 1981-09-14 Fujitsu Ltd Semiconductor memory device
US4503465A (en) * 1982-11-24 1985-03-05 Rca Corporation Analog signal comparator using digital circuitry
US4581546A (en) * 1983-11-02 1986-04-08 Inmos Corporation CMOS substrate bias generator having only P channel transistors in the charge pump
US5039877A (en) * 1990-08-30 1991-08-13 Micron Technology, Inc. Low current substrate bias generator
FR2668668B1 (fr) * 1990-10-30 1994-02-04 Samsung Electronics Co Ltd Generateur de tension de substrat pour un dispositif a semiconducteurs.

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3609414A (en) * 1968-08-20 1971-09-28 Ibm Apparatus for stabilizing field effect transistor thresholds
DE1921131C3 (de) * 1969-04-25 1979-01-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Anordnung zur Temperaturkompensation eines als Regel-Stellglied in Verstärkern angeordneten Feldeffekttransistors
NL7103303A (enrdf_load_stackoverflow) * 1970-03-13 1971-09-15

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5482056A (en) * 1977-12-13 1979-06-29 Nec Corp Substrate bias voltage generator circuit
JPS5527761A (en) * 1978-07-17 1980-02-28 Hitachi Ltd Oscillation circuit device
WO1980001021A1 (fr) * 1978-10-30 1980-05-15 Fujitsu Ltd Circuit semi-conducteur
WO1980002773A1 (fr) * 1979-06-05 1980-12-11 Fujitsu Ltd Dispositif mos avec un circuit generateur de polarisation d'un substrat
EP0030244B1 (en) * 1979-06-05 1986-04-09 Fujitsu Limited Mos device with substrate-bias generating circuit
JPS5619676A (en) * 1979-07-26 1981-02-24 Fujitsu Ltd Semiconductor device
US4471290A (en) * 1981-06-02 1984-09-11 Tokyo Shibaura Denki Kabushiki Kaisha Substrate bias generating circuit
JPS60117655A (ja) * 1983-11-16 1985-06-25 インモス、コーポレーシヨン 基板上のcmos回路のラッチアップ制御方法および装置

Also Published As

Publication number Publication date
ES427740A1 (es) 1976-08-01
GB1462935A (en) 1977-01-26
JPS5417541B2 (enrdf_load_stackoverflow) 1979-06-30
SU643099A3 (ru) 1979-01-15
SE391996B (sv) 1977-03-07
IT1012365B (it) 1977-03-10
FR2235417A1 (enrdf_load_stackoverflow) 1975-01-24
SE7407783L (enrdf_load_stackoverflow) 1974-12-30
BE815619A (fr) 1974-09-16
DE2422653C2 (de) 1983-03-31
IL45251A0 (en) 1974-12-31
FR2235417B1 (enrdf_load_stackoverflow) 1976-06-25
CA1033410A (en) 1978-06-20
CH570705A5 (enrdf_load_stackoverflow) 1975-12-15
DD114197A5 (enrdf_load_stackoverflow) 1975-07-12
DE2422653A1 (de) 1975-01-16
NL7408728A (enrdf_load_stackoverflow) 1974-12-31
IL45251A (en) 1976-10-31

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