JPS5417541B2 - - Google Patents

Info

Publication number
JPS5417541B2
JPS5417541B2 JP6300574A JP6300574A JPS5417541B2 JP S5417541 B2 JPS5417541 B2 JP S5417541B2 JP 6300574 A JP6300574 A JP 6300574A JP 6300574 A JP6300574 A JP 6300574A JP S5417541 B2 JPS5417541 B2 JP S5417541B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP6300574A
Other versions
JPS5024054A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5024054A publication Critical patent/JPS5024054A/ja
Publication of JPS5417541B2 publication Critical patent/JPS5417541B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators
JP6300574A 1973-06-29 1974-06-05 Expired JPS5417541B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US37527173A 1973-06-29 1973-06-29

Publications (2)

Publication Number Publication Date
JPS5024054A JPS5024054A (ja) 1975-03-14
JPS5417541B2 true JPS5417541B2 (ja) 1979-06-30

Family

ID=23480213

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6300574A Expired JPS5417541B2 (ja) 1973-06-29 1974-06-05

Country Status (14)

Country Link
JP (1) JPS5417541B2 (ja)
BE (1) BE815619A (ja)
CA (1) CA1033410A (ja)
CH (1) CH570705A5 (ja)
DD (1) DD114197A5 (ja)
DE (1) DE2422653C2 (ja)
ES (1) ES427740A1 (ja)
FR (1) FR2235417B1 (ja)
GB (1) GB1462935A (ja)
IL (1) IL45251A (ja)
IT (1) IT1012365B (ja)
NL (1) NL7408728A (ja)
SE (1) SE391996B (ja)
SU (1) SU643099A3 (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4030084A (en) * 1975-11-28 1977-06-14 Honeywell Information Systems, Inc. Substrate bias voltage generated from refresh oscillator
JPS5327374A (en) * 1976-08-26 1978-03-14 Sharp Corp High voltage drive metal oxide semiconductor device
JPS5482056A (en) * 1977-12-13 1979-06-29 Nec Corp Substrate bias voltage generator circuit
JPS5513566A (en) * 1978-07-17 1980-01-30 Hitachi Ltd Mis field effect semiconductor circuit device
US4229667A (en) * 1978-08-23 1980-10-21 Rockwell International Corporation Voltage boosting substrate bias generator
JPS5559756A (en) * 1978-10-30 1980-05-06 Fujitsu Ltd Semiconductor device
DE2966592D1 (en) * 1979-03-05 1984-03-01 Motorola Inc Substrate bias regulator
JPS55162257A (en) * 1979-06-05 1980-12-17 Fujitsu Ltd Semiconductor element having substrate bias generator circuit
JPS5619676A (en) * 1979-07-26 1981-02-24 Fujitsu Ltd Semiconductor device
JPS56117390A (en) * 1980-02-16 1981-09-14 Fujitsu Ltd Semiconductor memory device
JPS57199335A (en) * 1981-06-02 1982-12-07 Toshiba Corp Generating circuit for substrate bias
US4503465A (en) * 1982-11-24 1985-03-05 Rca Corporation Analog signal comparator using digital circuitry
US4581546A (en) * 1983-11-02 1986-04-08 Inmos Corporation CMOS substrate bias generator having only P channel transistors in the charge pump
US4571505A (en) * 1983-11-16 1986-02-18 Inmos Corporation Method and apparatus of reducing latch-up susceptibility in CMOS integrated circuits
US5039877A (en) * 1990-08-30 1991-08-13 Micron Technology, Inc. Low current substrate bias generator
FR2668668B1 (fr) * 1990-10-30 1994-02-04 Samsung Electronics Co Ltd Generateur de tension de substrat pour un dispositif a semiconducteurs.

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3609414A (en) * 1968-08-20 1971-09-28 Ibm Apparatus for stabilizing field effect transistor thresholds
DE1921131C3 (de) * 1969-04-25 1979-01-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Anordnung zur Temperaturkompensation eines als Regel-Stellglied in Verstärkern angeordneten Feldeffekttransistors
DE2111979A1 (de) * 1970-03-13 1971-10-21 Hitachi Ltd Feldeffekt-Halbleitereinrichtung

Also Published As

Publication number Publication date
CH570705A5 (ja) 1975-12-15
DD114197A5 (ja) 1975-07-12
IL45251A0 (en) 1974-12-31
SE391996B (sv) 1977-03-07
FR2235417B1 (ja) 1976-06-25
CA1033410A (en) 1978-06-20
BE815619A (fr) 1974-09-16
IL45251A (en) 1976-10-31
DE2422653A1 (de) 1975-01-16
SE7407783L (ja) 1974-12-30
SU643099A3 (ru) 1979-01-15
JPS5024054A (ja) 1975-03-14
DE2422653C2 (de) 1983-03-31
GB1462935A (en) 1977-01-26
ES427740A1 (es) 1976-08-01
NL7408728A (ja) 1974-12-31
FR2235417A1 (ja) 1975-01-24
IT1012365B (it) 1977-03-10

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