IL45251A - Apparatus for generating and controlling a desired substrate potential level on a semiconductor chip - Google Patents

Apparatus for generating and controlling a desired substrate potential level on a semiconductor chip

Info

Publication number
IL45251A
IL45251A IL45251A IL4525174A IL45251A IL 45251 A IL45251 A IL 45251A IL 45251 A IL45251 A IL 45251A IL 4525174 A IL4525174 A IL 4525174A IL 45251 A IL45251 A IL 45251A
Authority
IL
Israel
Prior art keywords
substrate
voltage
generating
semiconductor chip
controlling
Prior art date
Application number
IL45251A
Other versions
IL45251A0 (en
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of IL45251A0 publication Critical patent/IL45251A0/en
Publication of IL45251A publication Critical patent/IL45251A/en

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Static Random-Access Memory (AREA)
  • Logic Circuits (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)

Claims (7)

45251/3 CLAIMS?
1. Apparatus for generating and controlling a desired substrate potential level on an integrated semiconductor chip, comprising voltage generating means which include an impulse source, a substrate voltage detector, means for generating a periodic signal depending upon the substrate voltage and a circuit controlled by the said signal to influence the generated voltage by charging and discharging capacity'.-
2. Apparatus according to Claim 1 comprising a diode to couple the said generated voltage to the substrate of the chip*
3. Apparatus according to Claim 1 comprising a plurality of field-effect transistors on said Integraded semiconductor chip.
4. Apparatus according to Claim 1 in which the impulse source comprises a ring oscillator.
5. Apparatus according to Claim 1 in which the substrate voltage detector comprises a field effect transistor arranged within the substrate which field effect transistor has essentially the same threshold voltage as the other field effect transistors arranged within the substrate.
6. Apparatus according to Claim 1 in which the circuit to charge and discharge the said capacity is arranged so as to make use of both half waves of the said periodic signal. k 45251/3
7. Apparatus according to Claim 1 in which the substrate voltage detector comprises a voltage divider the division ratio o which determines the control of the substrate voltage. RS HE/rc
IL45251A 1973-06-29 1974-07-12 Apparatus for generating and controlling a desired substrate potential level on a semiconductor chip IL45251A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US37527173A 1973-06-29 1973-06-29

Publications (2)

Publication Number Publication Date
IL45251A0 IL45251A0 (en) 1974-12-31
IL45251A true IL45251A (en) 1976-10-31

Family

ID=23480213

Family Applications (1)

Application Number Title Priority Date Filing Date
IL45251A IL45251A (en) 1973-06-29 1974-07-12 Apparatus for generating and controlling a desired substrate potential level on a semiconductor chip

Country Status (14)

Country Link
JP (1) JPS5417541B2 (en)
BE (1) BE815619A (en)
CA (1) CA1033410A (en)
CH (1) CH570705A5 (en)
DD (1) DD114197A5 (en)
DE (1) DE2422653C2 (en)
ES (1) ES427740A1 (en)
FR (1) FR2235417B1 (en)
GB (1) GB1462935A (en)
IL (1) IL45251A (en)
IT (1) IT1012365B (en)
NL (1) NL7408728A (en)
SE (1) SE391996B (en)
SU (1) SU643099A3 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4030084A (en) * 1975-11-28 1977-06-14 Honeywell Information Systems, Inc. Substrate bias voltage generated from refresh oscillator
JPS5327374A (en) * 1976-08-26 1978-03-14 Sharp Corp High voltage drive metal oxide semiconductor device
JPS5482056A (en) * 1977-12-13 1979-06-29 Nec Corp Substrate bias voltage generator circuit
JPS5513566A (en) * 1978-07-17 1980-01-30 Hitachi Ltd Mis field effect semiconductor circuit device
US4229667A (en) * 1978-08-23 1980-10-21 Rockwell International Corporation Voltage boosting substrate bias generator
JPS5559756A (en) * 1978-10-30 1980-05-06 Fujitsu Ltd Semiconductor device
DE2966592D1 (en) * 1979-03-05 1984-03-01 Motorola Inc Substrate bias regulator
JPS55162257A (en) * 1979-06-05 1980-12-17 Fujitsu Ltd Semiconductor element having substrate bias generator circuit
JPS5619676A (en) * 1979-07-26 1981-02-24 Fujitsu Ltd Semiconductor device
JPS56117390A (en) 1980-02-16 1981-09-14 Fujitsu Ltd Semiconductor memory device
JPS57199335A (en) * 1981-06-02 1982-12-07 Toshiba Corp Generating circuit for substrate bias
US4503465A (en) * 1982-11-24 1985-03-05 Rca Corporation Analog signal comparator using digital circuitry
US4581546A (en) * 1983-11-02 1986-04-08 Inmos Corporation CMOS substrate bias generator having only P channel transistors in the charge pump
US4571505A (en) * 1983-11-16 1986-02-18 Inmos Corporation Method and apparatus of reducing latch-up susceptibility in CMOS integrated circuits
US5039877A (en) * 1990-08-30 1991-08-13 Micron Technology, Inc. Low current substrate bias generator
US5157278A (en) * 1990-10-30 1992-10-20 Samsung Electronics Co., Ltd. Substrate voltage generator for semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3609414A (en) * 1968-08-20 1971-09-28 Ibm Apparatus for stabilizing field effect transistor thresholds
DE1921131C3 (en) * 1969-04-25 1979-01-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Arrangement for temperature compensation of a field effect transistor arranged as a control actuator in amplifiers
NL7103303A (en) * 1970-03-13 1971-09-15

Also Published As

Publication number Publication date
SE7407783L (en) 1974-12-30
FR2235417B1 (en) 1976-06-25
DD114197A5 (en) 1975-07-12
CH570705A5 (en) 1975-12-15
BE815619A (en) 1974-09-16
GB1462935A (en) 1977-01-26
FR2235417A1 (en) 1975-01-24
CA1033410A (en) 1978-06-20
SE391996B (en) 1977-03-07
JPS5024054A (en) 1975-03-14
NL7408728A (en) 1974-12-31
IT1012365B (en) 1977-03-10
DE2422653C2 (en) 1983-03-31
DE2422653A1 (en) 1975-01-16
IL45251A0 (en) 1974-12-31
ES427740A1 (en) 1976-08-01
JPS5417541B2 (en) 1979-06-30
SU643099A3 (en) 1979-01-15

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